Anisotropic magnetoresistance and anisotropic tunneling magnetoresistance due to quantum interference in ferromagnetic metal break junctions

We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle, in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.Comment: 4 pages, 4 figures. Changes in response to reviewer comments. New data provide information about the mechanism causing the AMR and TAM

Metal-nanoparticle single-electron transistors fabricated using electromigration

We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created between two electrodes using electromigration, all on top of an oxidized aluminum gate. We achieve sufficient gate coupling to access more than ten charge states of individual gold nanoparticles (5-15 nm in diameter). The devices are sufficiently stable to permit spectroscopic studies of the electron-in-a-box level spectra within the nanoparticle as its charge state is varied.Comment: 3 pages, 3 figures, submitted to AP

From ballistic transport to tunneling in electromigrated ferromagnetic breakjunctions

We fabricate ferromagnetic nanowires with constrictions whose cross section can be reduced gradually from 100 nm to the atomic scale and eventually to the tunneling regime by means of electromigration. These devices are mechanically stable against magnetostriction and magnetostatic effects. We measure magnetoresistances ~ 0.3% for 100*30 nm^2 constrictions, increasing to a maximum of 80% for atomic-scale widths. These results are consistent with a geometrically-constrained domain wall trapped at the constriction. For the devices in the tunneling regime we observe large fluctuations in MR, between -10 and 85%.Comment: 4 pages, 5 figure

Shilnikov Lemma for a nondegenerate critical manifold of a Hamiltonian system

We prove an analog of Shilnikov Lemma for a normally hyperbolic symplectic critical manifold $M\subset H^{-1}(0)$ of a Hamiltonian system. Using this result, trajectories with small energy $H=\mu>0$ shadowing chains of homoclinic orbits to $M$ are represented as extremals of a discrete variational problem, and their existence is proved. This paper is motivated by applications to the Poincar\'e second species solutions of the 3 body problem with 2 masses small of order $\mu$. As $\mu\to 0$, double collisions of small bodies correspond to a symplectic critical manifold of the regularized Hamiltonian system

Expanding Universe: slowdown or speedup?

The kinematics and dynamic interpretation of the cosmological expansion is reviewed in a widely accessible manner with emphasis on the acceleration aspect. Virtually all the approaches that can in principle account for the accelerated expansion of the Universe are reviewed, including dark energy as an item in the energy budget of the Universe; modified Einstein equations; and, on a fundamentally new level, the use of the holographic principle.Comment: 70 pages, 16 figures, 1 tables. corrected some error

Phase-space correlations of chaotic eigenstates

It is shown that the Husimi representations of chaotic eigenstates are strongly correlated along classical trajectories. These correlations extend across the whole system size and, unlike the corresponding eigenfunction correlations in configuration space, they persist in the semiclassical limit. A quantitative theory is developed on the basis of Gaussian wavepacket dynamics and random-matrix arguments. The role of symmetries is discussed for the example of time-reversal invariance.Comment: Published version with minor corrections to version

Anisotropic magnetoresistance in nanocontacts

We present ab initio calculations of the evolution of anisotropic magnetoresistance (AMR) in Ni nanocontacts from the ballistic to the tunnel regime. We find an extraordinary enhancement of AMR, compared to bulk, in two scenarios. In systems without localized states, like chemically pure break junctions, large AMR only occurs if the orbital polarization of the current is large, regardless of the anisotropy of the density of states. In systems that display localized states close to the Fermi energy, like a single electron transistor with ferromagnetic electrodes, large AMR is related to the variation of the Fermi energy as a function of the magnetization direction.Comment: 7 pages, 4 figures; revised for publication, new figures in greyscal