Broadening effects due to alloy scattering in Quantum Cascade Lasers

We report on calculations of broadening effects in QCL due to alloy scattering. The output of numerical calculations of alloy broadened Landau levels compare favorably with calculations performed at the self-consistent Born approximation. Results for Landau level width and optical absorption are presented. A disorder activated forbidden transition becomes significant in the vicinity of crossings of Landau levels which belong to different subbands. A study of the time dependent survival probability in the lowest Landau level of the excited subband is performed. It is shown that at resonance the population relaxation occurs in a subpicosecond scale.Comment: 7 pages, 8 figure

Self-Consistent Electron Subbands of Gaas/Algaas Heterostructure in Magnetic Fields Parallel to the Interface

The effect of strong magnetic fields parallel to GaAs/AlGaAs interface on the subband structure of a 2D electron layer is ivestigated theoretically. The system with two levels occupied in zero magnetic field is considered and the magnetic field induced depletion of the second subband is studied. The confining potential and the electron dispersion relations are calculated self-consistently, the electron- electron interaction is taken into account in the Hartree approximation.Comment: written in LaTeX, 8 pages, 4 figs. available on request from [email protected]

Long-term high fat feeding of rats results in increased numbers of circulating microvesicles with pro-inflammatory effects on endothelial cells

Obesity and type 2 diabetes lead to dramatically increased risks of atherosclerosis and CHD. Multiple mechanisms converge to promote atherosclerosis by increasing endothelial oxidative stress and up-regulating expression of pro-inflammatory molecules. Microvesicles (MV) are small ( < 1 μm) circulating particles that transport proteins and genetic material, through which they are able to mediate cell–cell communication and influence gene expression. Since MV are increased in plasma of obese, insulin-resistant and diabetic individuals, who often exhibit chronic vascular inflammation, and long-term feeding of a high-fat diet (HFD) to rats is a well-described model of obesity and insulin resistance, we hypothesised that this may be a useful model to study the impact of MV on endothelial inflammation. The number and cellular origin of MV from HFD-fed obese rats were characterised by flow cytometry. Total MV were significantly increased after feeding HFD compared to feeding chow (P< 0·001), with significantly elevated numbers of MV derived from leucocyte, endothelial and platelet compartments (P< 0·01 for each cell type). MV were isolated from plasma and their ability to induce reactive oxygen species (ROS) formation and vascular cell adhesion molecule (VCAM)-1 expression was measured in primary rat cardiac endothelial cells in vitro. MV from HFD-fed rats induced significant ROS (P< 0·001) and VCAM-1 expression (P= 0·0275), indicative of a pro-inflammatory MV phenotype in this model of obesity. These findings confirm that this is a useful model to further study the mechanisms by which diet can influence MV release and subsequent effects on cardio-metabolic health

Effective-Mass Dirac Equation for Woods-Saxon Potential: Scattering, Bound States and Resonances

Approximate scattering and bound state solutions of the one-dimensional effective-mass Dirac equation with the Woods-Saxon potential are obtained in terms of the hypergeometric-type functions. Transmission and reflection coefficients are calculated by using behavior of the wave functions at infinity. The same analysis is done for the constant mass case. It is also pointed out that our results are in agreement with those obtained in literature. Meanwhile, an analytic expression is obtained for the transmission resonance and observed that the expressions for bound states and resonances are equal for the energy values $E=\pm m$.Comment: 20 pages, 6 figure

InAs-GaSb laser: Prospects for efficient THz emission

We suggest to use InAs/GaSb coupled quantum wells for THz lasing. In these heterostructures THz lasing is based not on intersubband but on interband transitions. Crucial advantages of this design in comparison with intersubband lasers are (i) a large value of the interband dipole matrix element and (ii) easier maintaining of population inversion. These advantages lead to a gain of two orders of magnitude higher than for intersubband lasing. Even higher gain can be obtained in special design InAs/GaSb W-structures where a hybridization gap of 1-3THz is formed and optical density of states is singular.Comment: 14 pages, 2 figures. Accepted for publication in Applied Physics Letter

Lande-like formula for the g factors of hole-nanowire subband edges

We have analyzed theoretically the Zeeman splitting of hole-quantum-wire subband edges. As is typical for any bound state, their g factor depends on both an intrinsic g factor of the material and an additional contribution arising from a finite bound-state orbital angular momentum. We discuss the quantum-confinement-induced interplay between bulk-material and orbital effects, which is nontrivial due to the presence of strong spin-orbit coupling. A compact analytical formula is provided that elucidates this interplay and can be useful for predicting Zeeman splitting in generic hole-wire geometries.Comment: 4 pages, 2 figure

Photoluminescence pressure coefficients of InAs/GaAs quantum dots

We have investigated the band-gap pressure coefficients of self-assembled InAs/GaAs quantum dots by calculating 17 systems with different quantum dot shape, size, and alloying profile using atomistic empirical pseudopotential method within the ``strained linear combination of bulk bands'' approach. Our results confirm the experimentally observed significant reductions of the band gap pressure coefficients from the bulk values. We show that the nonlinear pressure coefficients of the bulk InAs and GaAs are responsible for these reductions. We also find a rough universal pressure coefficient versus band gap relationship which agrees quantitatively with the experimental results. We find linear relationships between the percentage of electron wavefunction on the GaAs and the quantum dot band gaps and pressure coefficients. These linear relationships can be used to get the information of the electron wavefunctions.Comment: 8 pages, 2 tables, 4 figure

Two-photon- photoluminescence excitation spectroscopy of single quantum-dots

We present experimental and theoretical study of single semiconductor quantum dots excited by two non-degenerate, resonantly tuned variably polarized lasers. The first laser is tuned to excitonic resonances. Depending on its polarization it photogenerates a coherent single exciton state. The second laser is tuned to biexciton resonances. By scanning the energy of the second laser for various polarizations of the two lasers, while monitoring the emission from the biexciton and exciton spectral lines, we map the biexciton photoluminescence excitation spectra. The resonances rich spectra of the second photon absorption are analyzed and fully understood in terms of a many carrier theoretical model which takes into account the direct and exchange Coulomb interactions between the quantum confined carriers.Comment: Accepted for publication in PR

Intrinsic electric field effects on few-particle interactions in coupled GaN quantum dots

We study the multi-exciton optical spectrum of vertically coupled GaN/AlN quantum dots with a realistic three-dimensional direct-diagonalization approach for the description of few-particle Coulomb-correlated states. We present a detailed analysis of the fundamental properties of few-particle/exciton interactions peculiar of nitride materials. The giant intrinsic electric fields and the high electron/hole effective masses give rise to different effects compared to GaAs-based quantum dots: intrinsic exciton-exciton coupling, non-molecular character of coupled dot exciton wavefunction, strong dependence of the oscillator strength on the dot height, large ground state energy shift for dots separated by different barriers. Some of these effects make GaN/AlN quantum dots interesting candidates in quantum information processing.Comment: 23 pages, 8 figures, 1 tabl

Quantum calculations of the carrier mobility in thin films: Methodology, Matthiessen's rule and comparison with semi-classical approaches

We discuss the calculation of the carrier mobility in silicon films within the quantum Non-Equilibrium Green's Functions (NEGF) framework. We introduce a new method for the extraction of the carrier mobility that is free from contact resistance contamination, and provides accurate mobilities at a reasonable cost, with minimal needs for ensemble averages. We then introduce a new paradigm for the definition of the partial mobility $\mu_{M}$ associated with a given elastic scattering mechanism "M", taking phonons (PH) as a reference ($\mu_{M}^{-1}=\mu_{PH+M}^{-1}-\mu_{PH}^{-1}$). We argue that this definition makes better sense in a quantum transport framework as it is free from long range interference effects that can appear in purely ballistic calculations. As a matter of fact, these mobilities satisfy Matthiessen's rule for three mechanisms [surface roughness (SR), remote Coulomb scattering (RCS) and phonons] much better than the usual, single mechanism calculations. We also discuss the problems raised by the long range spatial correlations in the RCS disorder. Finally, we compare semi-classical Kubo-Greenwood (KG) and quantum NEGF calculations. We show that KG and NEGF are in reasonable agreement for phonon and RCS, yet not for SR. We point to possible deficiencies in the treatment of SR scattering in KG, opening the way for further improvements.Comment: Submitted to Journal of Applied Physic