SPICE modelling of photoluminescence and electroluminescence based current-voltage curves of solar cells for concentration applications

Quantitative photoluminescence (PL) or electroluminescence (EL) experiments can be used to probe fast and in a non-destructive way the current-voltage (IV) characteristics of individual subcells in a multi-junction device, information that is, otherwise, not available. PL-based IV has the advantage that it is contactless and can be performed even in partly finished devices, allowing for an early diagnosis of the expected performance of the solar cells in the production environment. In this work we simulate the PL- and EL-based IV curves of single junction solar cells to assess their validity compared with the true IV curve and identify injection regimes where artefacts might appear due to the limited in-plane carrier transport in the solar cell layers. We model the whole photovoltaic device as a network of sub-circuits, each of them describing the solar cell behaviour using the two diode model. The sub-circuits are connected to the neighbouring ones with a resistor, representing the in-plane transport in the cell. The resulting circuit, involving several thousand subcircuits, is solved using SPICE

Photoluminescence-Based Current-Voltage Characterisation of Individual Subcells in Multi-Junction Devices

We demonstrate a photoluminescence based, contactless method to determine the current-voltage characteristics of the individual subcells in a multi-junction solar cell. The method, furthers known results for single junction devices and relies upon the reciprocity relation between the absorption and emission properties on a solar cell. Laser light with a suitable energy is used to excite carriers selectively in one junction and the internal voltages are deduced from the intensity of the resulting luminescence. The IV curves obtained this way on 1J, 2J and 6J devices are compared to those obtained using electroluminescence. Good agreement is obtained at high injection conditions while discrepancies at low injection are attributed to in-plane carrier transport

Photoluminescence-Based Current-Voltage Characterisation Of Individual Subcells In Multi-Junction Devices

We demonstrate a photoluminescence based, contactless method to determine the current-voltage characteristics of the individual subcells in a multi-junction solar cell. The method relies upon the reciprocity relation between the absorption and emission properties on a solar cell. Laser light with a suitable energy is used to excite carriers selectively in one junction and the internal voltages are deduced from the intensity of the resulting luminescence. The IV curves obtained this way on 1J, 2J and 6J devices are compared to those obtained using electroluminescence. Good agreement is obtained at high injection conditions while discrepancies at low injection are attributed to in-plane carrier transport

Operadores seudodiferenciales con símbolos : Distribuciones

Fil: Alvarez Alonso, Josefina D.. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina

Quantum Wire-on-Well (WoW) Cell With Long Carrier Lifetime for Efficient Carrier Transport

A quantum wire-on-well (WoW) structure, taking advantage of the layer undulation of an In- GaAs/GaAs/GaAsP superlattice grown on a vicinal substrate, was demonstrated to enhance the carrier collection from the confinement levels and extend the carrier lifetime (220 ns) by approximately 4 times as compared with a planar reference superlattice. Strained InGaAs/GaAs/GaAsP superlattices were grown on GaAs substrates under exactly the same condition except for the substrate misorientation (0o- and 6o- off). The growth on a 6o-off substrate induced significant layer undulation as a result of step bunching and non-uniform precursor incorporation between steps and terraces whereas the growth on a substrate without miscut resulted in planar layers. The undulation was the most significant for InGaAs layers, forming periodically aligned InGaAs nanowires on planar wells, a wire-on-well structure. As for the photocurrent corresponding to the sub-bandgap range of GaAs, the light absorption by the WoW was extended to longer wavelengths and weakened as compared with the planar superlattice, and almost the same photocurrent was obtained for both the WoW and the planar superlattice. Open-circuit voltage for the WoW was not affected by the longer-wavelength absorption edge and the same value was obtained for the two structures. Furthermore, the superior carrier collection in the WoW, especially under forward biases, improved fill factor compared with the planer superlattice

Dental Treatment under General Anesthesia in Healthy and Medically Compromised/Developmentally Disabled Children: A Comparative Study

Aim: To compare the type, number of procedures and working time of dental treatment provided under dental general anesthesia (DGA) in healthy and medically compromised/developmentally disabled children (MCDD children). Design: This cross-sectional prospective study involved 80 children divided into two groups of 40 children each. Group 1 consisted of healthy and Group 2 consisted of MCDD children. Results: Healthy children needed more working time than MCDD children, the means being 161±7.9 and 84±5.7 minutes, respectively (P= 0.0001). Operative dentistry and endodontic treatments showed a significant statistical difference (P= 0.0001). The means of procedures were 17±5.0 for healthy children and 11±4.8 for MCDD children (P= 0.0001). Conclusions: Healthy children needed more extensive dental treatment than MCDD children under DGA. The information from this sample of Mexican children could be used as reference for determining trends both within a facility as well as in comparing facilities in cross-population studies

Assessing the operating temperature of multi-junction solar cells with novel rear side layer stack and local electrical contacts

Sub-bandgap sunlight provides a source of heat generation in solar cells that is detrimental to performance, especially in space applications where heat dissipation is limited. In this work we assess the impact that an advanced rear-side contact scheme for multi-junction solar cells has on the cell temperature. Our results show that this scheme reduces the optical power absorption below the bandgap of germanium by 81% compared to a standard, full metallization design. Measurements of the electrical and thermal power fluxes performed in vacuum demonstrate that this lower near-infrared light absorption results in 8% less heat dissipated in the cell with the novel rear-side contact scheme when operating at 25 ºC. Modelling of the operating temperature for both cells when fully encapsulated with glass indicates that this effect will also result in a reduction of the operating temperature of 9 ºC for the novel design

Моделирование безопасного поведения водителя на перекрестках с помощью глубинного обучения

Roundabouts provide safe and fast circulation as well as many environmental advantages, but drivers adopting unsafe behaviours while circulating through them may cause safety issues, provoking accidents. In this paper we propose a way of training an autonomous vehicle in order to behave in a human and safe way when entering a roundabout. By placing a number of cameras in our vehicle and processing their video feeds through a series of algorithms, including Machine Learning, we can build a representation of the state of the surrounding environment. Then, we use another set of Deep Learning algorithms to analyze the data and determine the safest way of circulating through a roundabout given the current state of the environment, including nearby vehicles with their estimated positions, speeds and accelerations. By watching multiple attempts of a human entering a roundabout with both safe and unsafe behaviours, our second set of algorithms can learn to mimic the human’s good attempts and act in the same way as him, which is key to a safe implementation of autonomous vehicles. This work details the series of steps that we took, from building the representation of our environment to acting according to it in order to attain safe entry into single lane roundabouts

Comparative study of annealed and high temperature grown ITO and AZO films for solar energy applications

We present the optical and electrical properties of ITO and AZO films fabricated directly on silicon substrates under several growth and annealing temperatures, as well as their potential performance when used as low emissivity coatings in hybrid photovoltaic-thermal systems. We use broadband spectroscopic ellipsometry measurements (from 300 nm to 20 μm) to obtain a consistent model for the permittivity of each of the films. The best performance is found using the properties of the ITO film grown at 250 °C, with a state of the art resistivity of 0.2 mΩ-cm and an optimized thickness of 75 nm which leads to an estimated 50% increase in the extracted power compared to a standard diffused silicon solar cell. The Hall mobility and resistivity measurements of all the films are also provided, complementing and supporting the observed optical properties