Scanning tip measurement for identification of point defects

Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS) were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM) were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM

Preferences of Hungarian consumers for quality, access and price attributes of health care services — result of a discrete choice experiment

In 2010, a household survey was carried out in Hungary among 1037 respondents to study consumer preferences and willingness to pay for health care services. In this paper, we use the data from the discrete choice experiments included in the survey, to elicit the preferences of health care consumers about the choice of health care providers. Regression analysis is used to estimate the effect of the improvement of service attributes (quality, access, and price) on patients’ choice, as well as the differences among the socio-demographic groups. We also estimate the marginal willingness to pay for the improvement in attribute levels by calculating marginal rates of substitution. The results show that respondents from a village or the capital, with low education and bad health status are more driven by the changes in the price attribute when choosing between health care providers. Respondents value the good skills and reputation of the physician and the attitude of the personnel most, followed by modern equipment and maintenance of the office/hospital. Access attributes (travelling and waiting time) are less important. The method of discrete choice experiment is useful to reveal patients’ preferences, and might support the development of an evidence-based and sustainable health policy on patient payments

PUFA molekulák aktiválják a PPAR[gamma] (Peroxiszóma Proliferáció Aktiválta Receptor gamma) molekulát az ép sebocytákban

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What Role Do Annelid Neoblasts Play? A Comparison of the Regeneration Patterns in a Neoblast-Bearing and a Neoblast-Lacking Enchytraeid Oligochaete

The term ‘neoblast’ was originally coined for a particular type of cell that had been observed during annelid regeneration, but is now used to describe the pluripotent/totipotent stem cells that are indispensable for planarian regeneration. Despite having the same name, however, planarian and annelid neoblasts are morphologically and functionally distinct, and many annelid species that lack neoblasts can nonetheless substantially regenerate. To further elucidate the functions of the annelid neoblasts, a comparison was made between the regeneration patterns of two enchytraeid oligochaetes, Enchytraeus japonensis and Enchytraeus buchholzi, which possess and lack neoblasts, respectively. In E. japonensis, which can reproduce asexually by fragmentation and subsequent regeneration, neoblasts are present in all segments except for the eight anterior-most segments including the seven head-specific segments, and all body fragments containing neoblasts can regenerate a complete head and a complete tail, irrespective of the region of the body from which they were originally derived. In E. japonensis, therefore, no antero-posterior gradient of regeneration ability exists in the trunk region. However, when amputation was carried out within the head region, where neoblasts are absent, the number of regenerated segments was found to be dependent on the level of amputation along the body axis. In E. buchholzi, which reproduces only sexually and lacks neoblasts in all segments, complete heads were never regenerated and incomplete (hypomeric) heads could be regenerated only from the anterior region of the body. Such an antero-posterior gradient of regeneration ability was observed for both the anterior and posterior regeneration in the whole body of E. buchholzi. These results indicate that the presence of neoblasts correlates with the absence of an antero-posterior gradient of regeneration ability along the body axis, and suggest that the annelid neoblasts are more essential for efficient asexual reproduction than for the regeneration of missing body parts

Performance of thin-film transistors on polysilicon films grown by low-pressure chemical vapor deposition at various pressures

Defect properties of undoped low-pressure chemical-vapor-deposited (LPCVD) polysilicon films have been investigated by capacitance techniques on a simple metal-oxide-semiconductor (MOS) capacitor structure. The results show that the effective density of bulk and interface trap states is almost independent of the deposition pressure. After reducing the polysilicon film thickness by etching, although the grain size decreases due to the columnar mode of growth at low pressures, the trap states density reduces significantly. This finding could be explained by suggesting that, during the growth of the material, impurities are segregated at the film surface by fast diffusion through the grain boundaries. The transport properties of 0.5-mu-m-thick polysilicon films deposited at a pressure ranging from 100 to 0.5 mtorr were evaluated from measurements on thin-film transistors (TFT's). The results demonstrate that at high pressures the grain boundaries and at low pressures the polysilicon-SiO2 interface roughness scattering are the main factors in determining the transistor performance. The 40-mtorr polysilicon is the best TFT material due to a compromise between surface roughness and grain size that optimizes device performance

Electrical properties of polysilicon n(+)-i-p junctions

The current-voltage (I-V) characteristics, the frequency and temperature dependence of the capacitance and deep-level transient spectroscopy measurements in n+-i-p polysilicon junctions are investigated. All the polysilicon junctions underwent the same fabrication process except for the ion-implantation step. From the analysis of the experimental results information about the structure and defects of the undoped polysilicon material are obtained. At a low injection level of electrons the diode current is controlled by the distribution in energy grain boundary states and the structure of the deep centres change, after application of high (10 mA) injection level of electrons, to the single trap 0.182 eV