Topological phases of a dimerized Fermi–Hubbard model for semiconductor nano-lattices

Motivated by recent advances in fabricating artificial lattices in semiconductors and their promise for quantum simulation of topological materials, we study the one-dimensional dimerized Fermi–Hubbard model. We show how the topological phases at half-filling can be characterized by a reduced Zak phase defined based on the reduced density matrix of each spin subsystem. Signatures of bulk–boundary correspondence are observed in the triplon excitation of the bulk and the edge states of uncoupled spins at the boundaries. At quarter-filling, we show that owing to the presence of the Hubbard interaction the system can undergo a transition to the topological ground state of the non-interacting Su–Schrieffer–Heeger model with the application of a moderate-strength external magnetic field. We propose a robust experimental realization with a chain of dopant atoms in silicon or gate-defined quantum dots in GaAs where the transition can be probed by measuring the tunneling current through the many-body state of the chain

Atomically precise placement of single dopants in Si

We demonstrate the controlled incorporation of P dopant atoms in Si(001), presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si(001) and show that it is possible to thermally incorporate P atoms into Si(001) below the H-desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H lithography. We demonstrate the positioning of single P atoms in Si with similar to1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms

Higher order reconstructions of the Ge(001) surface induced by a Ba layer

Structural properties of Ba-induced reconstructions on a Ge(001) surface, based on atomic-resolution ultra high-vacuum scanning tunneling microscopy measurements, are discussed. It is shown that while the Ba - Ge layer, which fully covers the surface, is dominated by a phase with an internal 2 × 3 periodicity, it also includes portions of higher order 2 × 6 and 4 × 3 surface reconstructions, always accompanied by 1D protrusions embedded into the dominating phase. Modelling the observed higher order structures, using the elementary cell of the 2 × 3 phase calculated within the density functional theory, is shown to reproduce the experimental data very well. As such the higher order reconstructions can be treated as local defects of the dominating 2 × 3 phase

STM and DFT study on formation and characterization of Ba-incorporated phases on a Ge(001) surface

We characterize the incorporation of Ba adatoms into the Ge(001) surface, resulting in the formation of one-dimensional structures with an internal 2×3 periodicity, after the deposition of Ba atoms at 970 K or at room temperature followed by a 770 K anneal. Scanning tunneling microscopy (STM) data were compared with theoretically simulated STM images generated by density functional theory electronic structure calculations. Excellent agreement between experiment and simulation was found when using an adopted structural model that assumes partial removal of the surface Ge dimers in the [1–10] surface direction and subsequent addition of a single Ba atom to the substrate second layer. Structural assignments for a number of defects observed within regions of the 2×3 reconstruction were also obtained

Initial growth of Ba on Ge(001): An STM and DFT study

An ordered alkaline-earth submonolayer on a clean Si(001) surface provides a template for growth of the atomically sharp, crystalline Si-oxide interface that is ubiquitous in the semiconductor device industry. It has been suggested that submonolayers of Sr or Ba on Ge(001) could play a similar role as on structurally identical Si(001), overcoming known limitations of the Ge(001) substrate such as amorphization of its oxidation layers. In this paper the initial stage of the Ba oxidation process, i.e., adsorption and organization of Ba atoms on the Ge(001) surface as a function of temperature (270−770 K) for coverage 1.0 monolayer (ML) and 0.15−0.4 ML, is studied using scanning tunneling microscopy (STM) and density functional theory (DFT). Three types of features have been identified on the Ba-covered Ge(001) surface. They originate from isolated Ba adatoms, isolated Ba ad-dimers, and the Ba ad-dimers assembled into short-range, randomly distributed chains that run across the Ge dimer rows. We find from both STM measurements and DFT calculations that the latter is the dominant structure on Ge(001) with increasing coverage

The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale

The growth of multi-layer germanium-tin (GeSn) quantum wells offers an intriguing pathway towards the integration of lasers in a CMOS platform. An important step in growing high quality quantum well interfaces is the formation of an initial wetting layer. However, key atomic-scale details of this process have not previously been discussed. We use scanning tunneling microscopy combined with density functional theory to study the deposition of Sn on Ge(1 0 0) at room temperature over a coverage range of 0.01 to 1.24 monolayers. We demonstrate the formation of a sub-2% Ge content GeSn wetting layer from three atomic-scale characteristic ad-dimer structural components, and show that small quantities of Sn incorporate into the Ge surface forming two atomic configurations. The ratio of the ad-dimer structures changes with increasing Sn coverage, indicating a change in growth kinetics. At sub-monolayer coverage, the least densely packing ad-dimer structure is most abundant. As the layer closes, forming a two-dimensional wetting layer, the more densely packing ad-dimer structure become dominant. These results demonstrate the capability to form an atomically smooth wetting layer at room temperature, and provide critical atomic-scale insights for the optimization of growth processes of GeSn multi-quantum-wells to meet the quality requirements of optical GeSn-based devices

Quantum engineering at the silicon surface using dangling bonds.

Individual atoms and ions are now routinely manipulated using scanning tunnelling microscopes or electromagnetic traps for the creation and control of artificial quantum states. For applications such as quantum information processing, the ability to introduce multiple atomic-scale defects deterministically in a semiconductor is highly desirable. Here we use a scanning tunnelling microscope to fabricate interacting chains of dangling bond defects on the hydrogen-passivated silicon (001) surface. We image both the ground-state and the excited-state probability distributions of the resulting artificial molecular orbitals, using the scanning tunnelling microscope tip bias and tip-sample separation as gates to control which states contribute to the image. Our results demonstrate that atomically precise quantum states can be fabricated on silicon, and suggest a general model of quantum-state fabrication using other chemically passivated semiconductor surfaces where single-atom depassivation can be achieved using scanning tunnelling microscopy

Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy

We study subsurface arsenic dopants in a hydrogen-terminated Si(001) sample at 77 K, using scanning tunnelling microscopy and spectroscopy. We observe a number of different dopant-related features that fall into two classes, which we call As1 and As2. When imaged in occupied states, the As1 features appear as anisotropic protrusions superimposed on the silicon surface topography and have maximum intensities lying along particular crystallographic orientations. In empty-state images the features all exhibit long-range circular protrusions. The images are consistent with buried dopants that are in the electrically neutral (D0) charge state when imaged in filled states, but become positively charged (D+) through electrostatic ionization when imaged under empty-state conditions, similar to previous observations of acceptors in GaAs. Density functional theory calculations predict that As dopants in the third layer of the sample induce two states lying just below the conduction-band edge, which hybridize with the surface structure creating features with the surface symmetry consistent with our STM images. The As2 features have the surprising characteristic of appearing as a protrusion in filled-state images and an isotropic depression in empty-state images, suggesting they are negatively charged at all biases. We discuss the possible origins of this feature

Hydrogen resist lithography and electron beam lithography for fabricating silicon targets for studying donor orbital states

Recently, phosphorous structures in silicon have been of interest theoretically and experimentally due to their relevance in the field of quantum computing. Coherent control of the orbital states of shallow donors in silicon has been demonstrated in bulk doped samples. Here we discuss the fabrication techniques required to 1) obtain patterned two dimensional dilute sheets of impurities in silicon of controlled doping densities 2) get them to act as targets for a terahertz laser. Scanning tunnelling microscope hydrogen lithography enables patterning of impurity features in silicon with a resolution from 1nm to tens of nm. Molecular beam epitaxy is used for a protective thin-film crystalline silicon growth over the impurity sheet. Electron beam lithography coupled with reactive ion etching allows features from tens to hundreds of microns to be etched into the silicon with 10 to 20nm resolution. The experimental readout is achieved via illumination of the silicon target by terahertz light and subsequent electrical detection. The electrical signal comes from coherent and non-linear excitations of the impurity electrons. This detection technique enables the precision condensed matter samples to remain intact after exposure to the free electron laser pulse