Radiative recombination mechanisms in aluminum tris(8-hydroxyquinoline): Evidence for triplet exciton recombination

Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 88, 781 (2000) and may be found at

1.54 mu m electroluminescence from erbium (III) tris(8-hydroxyquinoline) (ErQ)-based organic light-emitting diodes

Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Applied Physics Letters 75, 1380 (1999) and may be found at

Erbium (III) tris(8-hydroxyquinoline) (ErQ): A potential material for silicon compatible 1.5 mu m emitters

Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Applied Physics Letters 74, 798 (1999) and may be found at

Infrared organic light emitting diodes using neodymium tris-(8-hydroxyquinoline)

Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 88, 777 (2000) and may be found at

Silicon-based organic light-emitting diode operating at a wavelength of 1.5 mu m

Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Applied Physics Letters 77, 2271 (2000) and may be found at

Efficient oxide phosphors for light upconversion; green emission from Yb3+ and Ho3+ co-doped Ln(2)BaZnO(5) (Ln = Y, Gd)

This is the author's accepted version of the article. The final published article can be found here: http://dx.doi.org/10.1039/C0JM01652

Design and synthesis of irreversible inhibitors of foot-and-mouth disease virus 3C protease.

Foot-and-mouth disease virus (FMDV) causes a highly infectious and economically devastating disease of livestock. The FMDV genome is translated as a single polypeptide precursor that is cleaved into functional proteins predominantly by the highly conserved viral 3C protease, making this enzyme an attractive target for antiviral drugs. A peptide corresponding to an optimal substrate has been modified at the C-terminus, by the addition of a warhead, to produce irreversible inhibitors that react as Michael acceptors with the enzyme active site. Further investigation highlighted key structural determinants for inhibition, with a positively charged P2 being particularly important for potency. © 2013 Elsevier Ltd. All rights reserved

The response of mild steel and armour steel plates to localised air-blast loading-comparison of numerical modelling techniques

This paper presents a comparative study of numerical, experimental and empirical techniques on the effect of localised air blast loads on mild steel and armour steel plates. The blast load effects on monolithic plates have been accounted for by using different approaches provided in the Finite Element hydrocode ABAQUS 6.13, namely an Eulerian Lagrangian and a Coupled Eulerian Lagrangian model. In the first model, the air and the explosive were modelled using multi-material Eulerian grids while the plate was modelled using a rigid Lagrangian mesh, while in the second model the rigid target was replaced with deformable plate. The transient deformation of the plate, strain localisation, pressure distribution on the plate have been investigated in the FE models, which have been validated against small scale experimental data for a limited range of charge sizes for both the mild steel and armoured steel. Despite the lower deflection of armour steel compared to mild steel plates, both plates were shown to undergo rupture upon similar charge mass and stand-off. For this purpose, a non-dimensional analysis was carried out with consideration of stand-off distance and slenderness ratio to predict the rupture impulse

n-type chalcogenides by ion implantation.

Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (~5-11 at.%), incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.This work was supported by the UK EPSRC grants EP/I018417/1, EP/I019065/1 and EP/I018050/1.This is the author accepted manuscript. The final version is available from NPG via http://dx.doi.org/10.1038/ncomms634

Nanoscale LiZnN - luminescent half-Heusler quantum dots

Colloidal semiconductor quantum dots are a well-established technology, with numerous materials available either commercially or through the vast body of literature. The prevalent materials are cadmium-based and are unlikely to find general acceptance in most applications. While the III-V family of materials is a likely substitute, issues remain about its long-term suitability, and other earth-abundant materials are being explored. In this report, we highlight a nanoscale half-Heusler semiconductor, LiZnN, composed of readily available elements as a potential alternative system to luminescent II-VI and III-V nanoparticle quantum dots