9,673 research outputs found

    On the nature of the spin-polarized hole states in a quasi-two-dimensional GaMnAs ferromagnetic layer

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    A self-consistent calculation of the density of states and the spectral density function is performed in a two-dimensional spin-polarized hole system based on a multiple-scattering approximation. Using parameters corresponding to GaMnAs thin layers, a wide range of Mn concentrations and hole densities have been explored to understand the nature, localized or extended, of the spin-polarized holes at the Fermi level for several values of the average magnetization of the Mn ystem. We show that, for a certain interval of Mn and hole densities, an increase on the magnetic order of the Mn ions come together with a change of the nature of the states at the Fermi level. This fact provides a delocalization of spin-polarized extended states anti-aligned to the average Mn magnetization, and a higher spin-polarization of the hole gas. These results are consistent with the occurrence of ferromagnetism with relatively high transition temperatures observed in some thin film samples and multilayered structures of this material.Comment: 3 page

    Magnetic ordering in GaAlAs:Mn double well structure

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    The magnetic order in the diluted magnetic semiconductor barrier of double AlAs/GaAs: Mn quantum well structures is investigated by Monte Carlo simulations. A confinement adapted RKKY mechanism is implemented for indirect exchange between Mn ions mediated by holes. It is shown that, depending on the barrier width and the hole concentration a ferromagnetic or a spin-glass order can be established.Comment: 3 figure

    Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures

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    The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent mobility, conductivity and resistivity in (Ga,Mn)As/GaAs,(Ga,Mn)N/GaN, and (Si,Mn)/Si multilayers are calculated as a function of temperature, scaled by the average magnetization of the diluted magnetic semiconductor layers. An increase of the resistivity near the transition temperature is obtained. We observed that the spin-polarized transport properties changes strongly among the three materials.Comment: 3 pages, 4 figure

    Competição de cultivares de milho (Zea mays L.) no Estado de Sergipe.

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    The typo-morphological facade of the catholic churches of S. Miguel, Azores

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    This paper intends to present the research results that comprised a comparative facade analysis of 41 parish and non-parish Catholic churches on the island of S. Miguel, Azores, built during the 18th and 19th centuries. The research highlights the existence of a facade typology expressed in the formal similarities between them. The matrix composition and the ornamental elements present on the 63 churches' facades were analysed and studied in detail in 41 churches, mapped and characterised by the elements that compose them. These are grouped into categories, allowing to establish and synthesise a typology, called the micaelense model facade, according to the composition principals present in the facades. The analysis method, the reading of the forms of the churches' facades, and the metric survey of these were based on old and current photographic records,supported by a comparative analysis elaborated and organised from tables and synthetic schemes systematised in vector drawings (graphic representations made in CAD).info:eu-repo/semantics/publishedVersio

    Melting temperature of screened Wigner crystal on helium films by molecular dynamics

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    Using molecular dynamics (MD) simulation, we have calculated the melting temperature of two-dimensional electron systems on 240 240\AA-500 500\AA helium films supported by substrates of dielectric constants ϵs=2.211.9 \epsilon_{s}=2.2-11.9 at areal densities nn varying from 3×109 3\times 10^{9} cm2^{-2} to 1.3×1010 1.3\times 10^{10} cm2^{-2}. Our results are in good agreement with the available theoretical and experimental results.Comment: 4 pages and 4 figure

    Tradução de interfaces de aplicações para idiomas distintos.

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    Este documento apresenta o esquema de tradução proposto para as telas de entrada de dados do banco de dados de experimentos em manejo de fertilizantes para cana-de-açúcar.bitstream/CNPTIA/10193/1/comtec54.pdfAcesso em: 30 maio 2008

    A semiquantitative approach to the impurity-band-related transport properties of GaMnAs nanolayers

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    We investigate the spin-polarized transport of GaMnAs nanolayers in which a ferromagnetic order exists below a certain transition temperature. Our calculation for the self-averaged resistivity takes into account the existence of an impurity band determining the extended ("metallic" transport) or localized (hopping by thermal excitation) nature of the states at and near the Fermi level. Magnetic order and resistivity are inter-related due to the influence of the spin polarization of the impurity band and the effect of the Zeeman splitting on the mobility edge. We obtain, for a given range of Mn concentration and carrier density, a "metallic" behavior in which the transport by extended carriers dominates at low temperature, and is dominated by the thermally excited localized carriers near and above the transition temperature. This gives rise to a conspicuous hump of the resistivity which has been experimentally observed and brings light onto the relationship between transport and magnetic properties of this material
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