Magnetic ordering in GaAlAs:Mn double well structure

Abstract

The magnetic order in the diluted magnetic semiconductor barrier of double AlAs/GaAs: Mn quantum well structures is investigated by Monte Carlo simulations. A confinement adapted RKKY mechanism is implemented for indirect exchange between Mn ions mediated by holes. It is shown that, depending on the barrier width and the hole concentration a ferromagnetic or a spin-glass order can be established.Comment: 3 figure