Proton/pion ratios and radial flow in pp and peripheral heavy ion collisions

The production of baryon and mesons in the RHIC heavy-ion experiments has received a lot of attention lately. Although not widely known, the pp data measured concurrently with heavy ion collisions do not find a convincing explanation in terms of simple models. We present the results of an afterburner to Pythia and Hijing event generators, simulating radial flow which seems to qualitatively explain the experimental results when applied to the pp collision data from RHIC at 200 GeV center-of-mass energy.Comment: 4 page, 5 figures. Prepared for X Mexican Workshop on Particles and Filed, Morelia Michoacan, November 7-17,2005. Referenced was corrected. Section 2, a sentence was modifie

Recent results on Charm Physics from Fermilab

New high statistics, high resolution fixed target experiments producing $10^5$ - $10^6$ fully reconstructed charm particles are allowing a detailed study of the charm sector. Recent results on charm quark production from Fermilab fixed target experiments E791, SELEX and FOCUS are presented.Comment: 27 pages, corrected some typographical errors. To appear Proc. VII Mexican Workshop of Particles and Field, Merida Yuc. M\'ex., Nov. 199

Azimuthal Correlations in p-p collisions

We report the analysis of experimental azimuthal correlations measured by STAR in p-p collisions at $\sqrt{s_{NN}}$ = 200 GeV. We conclude that for a fit of data using Pythia event generator we need to include two values of $k_{T}$.Comment: 4 page, 3 figures. Prepared for X Mexican Workshop on Particles and Fields. Morelia Mich. Nov 7-12, 200

Effect of residual Bose-Einstein correlations on the Dalitz plot of hadronic charm meson decay

We show that the presence of residual Bose-Einstein correlations may affect the resonant contribution of hadronic charm decays where two identical pions appear in the final state. The distortion of the phase space of the reaction would be visible in the dalitz plot. The decay D+ --> K- pi+ pi+ is discussed but results can be generalized to any decay with identical bosons.Comment: 12 pages, included 4 figures. Submitted Phys. Lett.

PVT-Robust CMOS Programmable Chaotic Oscillator: Synchronization of Two 7-Scroll Attractors

Designing chaotic oscillators using complementary metal-oxide-semiconductor (CMOS) integrated circuit technology for generating multi-scroll attractors has been a challenge. That way, we introduce a current-mode piecewise-linear (PWL) function based on CMOS cells that allow programmable generation of 2–7-scroll chaotic attractors. The mathematical model of the chaotic oscillator designed herein has four coefficients and a PWL function, which can be varied to provide a high value of the maximum Lyapunov exponent. The coefficients are implemented electronically by designing operational transconductance amplifiers that allow programmability of their transconductances. Design simulations of the chaotic oscillator are provided for the 0.35μ m CMOS technology. Post-layout and process–voltage–temperature (PVT) variation simulations demonstrate robustness of the multi-scroll chaotic attractors. Finally, we highlight the synchronization of two seven-scroll attractors in a master–slave topology by generalized Hamiltonian forms and observer approach. Simulation results show that the synchronized CMOS chaotic oscillators are robust to PVT variations and are suitable for chaotic secure communication applications.Universidad Autónoma de Tlaxcala CACyPI-UATx-2017Program to Strengthen Quality in Educational Institutions C/PFCE-2016-29MSU0013Y-07-23National Council for Science and Technology 237991 22284

Pathological element-based active device models and their application to symbolic analysis

This paper proposes new pathological element-based active device models which can be used in analysis tasks of linear(ized) analog circuits. Nullators and norators along with the voltage mirror-current mirror (VM-CM) pair (collectively known as pathological elements) are used to model the behavior of active devices in voltage-, current-, and mixed-mode, also considering parasitic elements. Since analog circuits are transformed to nullor-based equivalent circuits or VM-CM pairs or as a combination of both, standard nodal analysis can be used to formulate the admittance matrix. We present a formulation method in order to build the nodal admittance (NA) matrix of nullor-equivalent circuits, where the order of the matrix is given by the number of nodes minus the number of nullors. Since pathological elements are used to model the behavior of active devices, we introduce a more efficient formulation method in order to compute small-signal characteristics of pathological element-based equivalent circuits, where the order of the NA matrix is given by the number of nodes minus the number of pathological elements. Examples are discussed in order to illustrate the potential of the proposed pathological element-based active device models and the new formulation method in performing symbolic analysis of analog circuits. The improved formulation method is compared with traditional formulation methods, showing that the NA matrix is more compact and the generation of nonzero coefficients is reduced. As a consequence, the proposed formulation method is the most efficient one reported so far, since the CPU time and memory consumption is reduced when recursive determinant-expansion techniques are used to solve the NA matrix.Promep-Mexico UATLX-PTC-088Junta de Andalucía TIC-2532Ministerio de Educación y Ciencia TEC2007-67247, TEC2010-14825UC-MEXUS-CONACyT CN-09-31