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Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device
A strained Ge quantum well, grown on a SiGe/Si virtual substrate and hosting two electrostatically defined hole spin qubits, is nondestructively investigated by synchrotron-based scanning X-ray diffraction microscopy to determine all its Bravais lattice parameters. This allows rendering the three-dimensional spatial dependence of the six strain tensor components with a lateral resolution of approximately 50 nm. Two different spatial scales governing the strain field fluctuations in proximity of the qubits are observed at 1 ÎŒm, respectively. The short-ranged fluctuations have a typical bandwidth of 2 Ă 10-4 and can be quantitatively linked to the compressive stressing action of the metal electrodes defining the qubits. By finite element mechanical simulations, it is estimated that this strain fluctuation is increased up to 6 Ă 10-4 at cryogenic temperature. The longer-ranged fluctuations are of the 10-3 order and are associated with misfit dislocations in the plastically relaxed virtual substrate. From this, energy variations of the light and heavy-hole energy maxima of the order of several 100 ÎŒeV and 1 meV are calculated for electrodes and dislocations, respectively. These insights over material-related inhomogeneities may feed into further modeling for optimization and design of large-scale quantum processors manufactured using the mainstream Si-based microelectronics technology
Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device
A strained Ge quantum well, grown on a SiGe/Si virtual substrate and hosting two electrostatically defined hole spin qubits, is nondestructively investigated by synchrotron-based scanning X-ray diffraction microscopy to determine all its Bravais lattice parameters. This allows rendering the three-dimensional spatial dependence of the six strain tensor components with a lateral resolution of approximately 50 nm. Two different spatial scales governing the strain field fluctuations in proximity of the qubits are observed at <100 nm and >1 ÎŒm, respectively. The short-ranged fluctuations have a typical bandwidth of 2 Ă 10-4 and can be quantitatively linked to the compressive stressing action of the metal electrodes defining the qubits. By finite element mechanical simulations, it is estimated that this strain fluctuation is increased up to 6 Ă 10-4 at cryogenic temperature. The longer-ranged fluctuations are of the 10-3 order and are associated with misfit dislocations in the plastically relaxed virtual substrate. From this, energy variations of the light and heavy-hole energy maxima of the order of several 100 ÎŒeV and 1 meV are calculated for electrodes and dislocations, respectively. These insights over material-related inhomogeneities may feed into further modeling for optimization and design of large-scale quantum processors manufactured using the mainstream Si-based microelectronics technology. </p
Silicon photonic toolkit for integrated switching matrices
In this paper, we present the optical elements needed for the fabrication of a wavelength selective silicon photonic integrated switching matrix. We focus on the device proposed in the European project IRIS, which is a wavelength division multiplexing (WDM) transponder aggregator. It implements a colourless, directionless, and contentionless reconfigurable optical add/drop multiplexer (ROADM) node for metro transport networks. The building blocks are described as well as the system specifications and the system architecture
Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device
A strained Ge quantum well, grown on a SiGe/Si virtual substrate and hosting two electrostatically defined hole spin qubits, is nondestructively investigated by synchrotron-based scanning X-ray diffraction microscopy to determine all its Bravais lattice parameters. This allows rendering the three-dimensional spatial dependence of the six strain tensor components with a lateral resolution of approximately 50 nm. Two different spatial scales governing the strain field fluctuations in proximity of the qubits are observed at <100 nm and >1 ÎŒm, respectively. The short-ranged fluctuations have a typical bandwidth of 2 Ă 10-4 and can be quantitatively linked to the compressive stressing action of the metal electrodes defining the qubits. By finite element mechanical simulations, it is estimated that this strain fluctuation is increased up to 6 Ă 10-4 at cryogenic temperature. The longer-ranged fluctuations are of the 10-3 order and are associated with misfit dislocations in the plastically relaxed virtual substrate. From this, energy variations of the light and heavy-hole energy maxima of the order of several 100 ÎŒeV and 1 meV are calculated for electrodes and dislocations, respectively. These insights over material-related inhomogeneities may feed into further modeling for optimization and design of large-scale quantum processors manufactured using the mainstream Si-based microelectronics technology. QCD/Veldhorst LabBUS/TNO STAFFQN/Veldhorst LabQCD/Scappucci La
Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device
A strained Ge quantum
well, grown on a SiGe/Si virtual substrate
and hosting two electrostatically defined hole spin qubits, is nondestructively
investigated by synchrotron-based scanning X-ray diffraction microscopy
to determine all its Bravais lattice parameters. This allows rendering
the three-dimensional spatial dependence of the six strain tensor
components with a lateral resolution of approximately 50 nm. Two different
spatial scales governing the strain field fluctuations in proximity
of the qubits are observed at 1 ÎŒm, respectively.
The short-ranged fluctuations have a typical bandwidth of 2 Ă
10â4 and can be quantitatively linked to the compressive
stressing action of the metal electrodes defining the qubits. By finite
element mechanical simulations, it is estimated that this strain fluctuation
is increased up to 6 Ă 10â4 at cryogenic temperature.
The longer-ranged fluctuations are of the 10â3 order
and are associated with misfit dislocations in the plastically relaxed
virtual substrate. From this, energy variations of the light and heavy-hole
energy maxima of the order of several 100 ÎŒeV and 1 meV are
calculated for electrodes and dislocations, respectively. These insights
over material-related inhomogeneities may feed into further modeling
for optimization and design of large-scale quantum processors manufactured
using the mainstream Si-based microelectronics technology
Design and Implementation of an Integrated Reconfigurable Silicon Photonics Switch Matrix in IRIS Project
This paper aims to present the design and the achieved results on a CMOS electronic and photonic integrated device for low cost, low power, transparent, mass-manufacturable optical switching. An unprecedented number of integrated photonic components (more than 1000), each individually electronically controlled, allows for the realization of a transponder aggregator device which interconnects up to eight transponders to a four direction colorless-directionless-contentionless ROADM. Each direction supports 12 200-GHz spaced wavelengths, which can be independently added or dropped from the network. An electronic ASIC, 3-D integrated on top of the photonic chip, controls the switch fabrics to allow a complete and microsecond fast reconfigurability
Observation of the decay in proton-proton collisions at 13 TeV
The decay has been observed with a statistical significance in excess of five standard deviations. The analysis is based on an event sample of proton-proton collisions at a center-of-mass energy of 13 TeV, collected by the CMS experiment in 2018 and corresponding to an integrated luminosity of 33.6 fb. Normalizing to the decay mode leads to a branching fraction of 10.1 (stat) 0.4 (syst) 10, a value that is consistent with the standard model prediction.The J/ÏâÎŒ+ÎŒ-ÎŒ+ÎŒ- decay has been observed with a statistical significance in excess of five standard deviations. The analysis is based on an event sample of proton-proton collisions at a center-of-mass energy of 13 TeV, collected by the CMS experiment in 2018 and corresponding to an integrated luminosity of 33.6ââfb-1. Normalizing to the J/ÏâÎŒ+ÎŒ- decay mode leads to a branching fraction of [10.1-2.7+3.3(stat)±0.4(syst)]Ă10-7, a value that is consistent with the standard model prediction.The J/ decay has been observed with a statistical significance in excess of five standard deviations. The analysis is based on an event sample of proton-proton collisions at a center-of-mass energy of 13 TeV, collected by the CMS experiment in 2018 and corresponding to an integrated luminosity of 33.6 fb. Normalizing to the J/ decay mode leads to a branching fraction [10.1 (stat) 0.4 (syst)] 10, a value that is consistent with the standard model prediction
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