1,475 research outputs found

    Double layer formation in the expanding region of an inductively coupled electronegative plasma

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    Double-layers (DLs) were observed in the expanding region of an inductively coupled plasma with Ar/SF_6\text{Ar}/\text{SF}\_6 gas mixtures. No DL was observed in pure argon or SF_6\text{SF}\_6 fractions below few percent. They exist over a wide range of power and pressure although they are only stable for a small window of electronegativity (typically between 8\% and 13\% of SF_6\text{SF}\_6 at 1mTorr), becoming unstable at higher electronegativity. They seem to be formed at the boundary between the source tube and the diffusion chamber and act as an internal boundary (the amplitude being roughly 1.5kT_ee\frac{kT\_e}{e})between a high electron density, high electron temperature, low electronegativity plasma upstream (in the source), and a low electron density, low electron temperature, high electronegativity plasma downstream

    Experimental investigation of double layers in expanding plasmas

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    Double layers (DLs) have been observed in a plasma reactor composed of a source chamber attached to a larger expanding chamber. Positive ion beams generated across the DL were characterized in the low plasma potential region using retarding field energy analyzers. In electropositive gases, DLs were formed at very low pressures between 0.1 and 1 mTorr with the plasma expansion forced by a strongly diverging magnetic field. The DL remains static, robust to changes in boundary conditions, and its position is related to the magnetic field lines. The voltage drop across the DL increases with decreasing pressure, i.e., with increasing electron temperature around 20 V at 0.17 mTorr. DLs were also observed in electronegative gases without a magnetic field over a greater range of pressure 0.5 to 10 mTorr. The actual profile of the electronegative DL is very sensitive to external parameters and intrusive elements, and they propagate at high negative ion fraction. Electrostatic probes measurements and laser-induced photodetachment show discontinuities in all plasma parameters electron density, electron temperature, negative ion fraction at the DL position. The voltage drop across the electronegative DL is about 8 V, is independent of the gas pressure and therefore of the electron temperature

    A flowing plasma model to describe drift waves in a cylindrical helicon discharge

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    A two-fluid model developed originally to describe wave oscillations in the vacuum arc centrifuge, a cylindrical, rapidly rotating, low temperature and confined plasma column, is applied to interpret plasma oscillations in a RF generated linear magnetised plasma (WOMBAT), with similar density and field strength. Compared to typical centrifuge plasmas, WOMBAT plasmas have slower normalised rotation frequency, lower temperature and lower axial velocity. Despite these differences, the two-fluid model provides a consistent description of the WOMBAT plasma configuration and yields qualitative agreement between measured and predicted wave oscillation frequencies with axial field strength. In addition, the radial profile of the density perturbation predicted by this model is consistent with the data. Parameter scans show that the dispersion curve is sensitive to the axial field strength and the electron temperature, and the dependence of oscillation frequency with electron temperature matches the experiment. These results consolidate earlier claims that the density and floating potential oscillations are a resistive drift mode, driven by the density gradient. To our knowledge, this is the first detailed physics model of flowing plasmas in the diffusion region away from the RF source. Possible extensions to the model, including temperature non-uniformity and magnetic field oscillations, are also discussed

    Preparation and biological investigation of luminescent water soluble CdTe nanoparticles

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    In this study CdTe quantum dots have been successfully prepared in aqueous medium using several different thiol stabilizers. The resulting nanocrystals were purified and the photoluminescence efficiency was subsequently enhanced through post preparative procedures such as photochemical etching and ageing. An optical study was carried out on the resulting CdTe nanocrystals as proof as their improvement. Preliminary tests of the thiol stabilised QDs as potential biolabels have been performed. It has been shown that L-cysteine stabilised QDs localising to the outer cell membrane in living cells. TGA stabilised CdTe QDs can potentially serve as live cell imaging tools as they exhibit strong luminescence and excellent photostability. In addition, the ability of TGA stabilised CdTe QDs to traverse the cell membrane of macrophages is a formidable quality that may potentially be harnessed for imaging and therapeutics. Modulating the delivery of QDs to subcellular locations in living cells opens a myriad of potential applications ranging from drug delivery to examination of intracellular processes

    A Feedback-Response Pause Normalises Response Perseveration Deficits in Pathological Gamblers

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    A failure to inhibit punished responses is central to problematic gambling. We used a computerised card playing game to determine if this failure can be ameliorated by imposing a delay between feedback from the previous trial and the opportunity to play the next card. We compared two experimental conditions: No pause (Standard task) and a 5-s pause (Pause task). Community-based problematic gamblers (n = 42) were compared with a control group (n = 39). Number of cards played (and cash won/lost) and latency of response were measured. Results show that, compared to a control group, problematic gamblers perseverated longer and lost more money on the Standard task, but this deficit was abolished by the imposition of a 5-s pause. Results suggest that, by strengthening inhibitory control processes, problematic gambling on computer gaming machines can be significantly reduced by the imposition of a simple short-delay before the next bet

    High-beta plasma effects in a low-pressure helicon plasma

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    In this work, high-beta plasma effects are investigated in a low-pressure helicon plasma source attached to a large volume diffusion chamber. When operating above an input power of 900 W and a magnetic field of 30 G a narrow column of bright blue light due to Ar II radiation is observed along the axis of the diffusion chamber. With this blue mode, the plasma density is axially very uniform in the diffusion chamber; however, the radial profiles are not, suggesting that a large diamagnetic current might be induced. The diamagnetic behavior of the plasma has been investigated by measuring the temporal evolution of the magnetic field Bz and the plasma kinetic pressure when operating in a pulsed discharge mode. It is found that although the electron pressure can exceed the magnetic field pressure by a factor of 2, a complete expulsion of the magnetic field from the plasma interior is not observed. In fact, under our operating conditions with magnetized ions, the maximum diamagnetism observed is 2%. It is observed that the magnetic field displays the strongest change at the plasma centre, which corresponds to the maximum in the plasma kinetic pressure. These results suggest that the magnetic field diffuses into the plasma sufficiently quickly that on a long time scale only a slight perturbation of the magnetic field is ever observed

    Nonlinear instability dynamics in a high-density, high-beta plasma

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    Entrainment and periodic pulling of an ion acoustic instability have been observed in the power spectra of a low-pressure high-beta plasma. The observed nonlinear phenomena can be modeled by using the van der Pol equation with a forcing term. Experimental results of the nonlinear processes are presented. Ion density fluctuations are detected on a negatively biased Langmuir probe for magnetic fields and input powers above 30 G and 900 W at 7.2 MHz respectively, and gas pressure below 1.5 mTorr. This low-frequency instability is observed in the central plasma blue core (argon II emission) and can be controlled by amplitude modulation of the radio frequency input power at frequencies close to the instability frequency

    Transition from unstable electrostatic confinement to stable magnetic confinement in a helicon reactor operating with Ar∕SF₆ gas mixtures

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    Two types of instabilities were previously identified in inductive discharges having an expanding chamber when negative ions are present: (i) the sourceinstability, occurring in the neighborhood of the capacitive-to-inductive (E to H) transition, and (ii) the downstream instability, which was shown to be the periodic formation and propagation of double layers. These unstable double layers were found over the entire parameter space (pressure/power) of interest, and they were born at the interface of the source and diffusion chambers. They acted as an internal electrostatic barrier separating a low-electronegativity, high-electron-density plasma upstream (in the source) and a high-electronegativity, low-electron-density plasma downstream. In this paper we have investigated the effect of adding a static axial magnetic field, classically used to increase the confinement and the plasma heating via helicon wave propagation. This had the following consequences: (i) the unstable double layers, and therefore the axial electrostatic confinement, were suppressed in a large part of the parameter space, and (ii) the magnetic confinement leads to a radially stratified plasma, the center being a low-electronegativity, high-density plasma and the edges being essentially an ion-ion plasma

    Optimization of a Cl₂–H₂ inductively coupled plasma etching process adapted to nonthermalized InP wafers for the realization of deep ridge heterostructures

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    Inductively coupled plasmaetching using Cl₂–H₂ chemistry with no additive gas (CH₄, Ar, or N₂) is studied to realize deep (>5ÎŒm) ridges with smooth and vertical sidewalls. The process is optimized for nonthermalized InP wafers to avoid the use of thermal grease. Cleaning of the rear side of the wafer after etching is avoided, which is suitable for an industrial process or for critical subsequent steps such as epitaxial regrowth. The influence of the Cl₂∕H₂ ratio on the etching mechanism is investigated for both InP bulk layers and InGaAs∕InP or InGaAlAs∕InPheterostructures. The authors show that this ratio is the main parameter controlling the ridge profile, in a similar way for both bulk InP and InGa(Al)As∕InP samples. Smooth and vertical sidewalls with neither undercuts nor notches can be obtained in the 0.5–1mTpressure range for a hydrogen percentage of 35%–45% in the gas mixture. Etching rates from 900to1300nm∕min together with a selectivity over SiNx dielectric mask as high as 24:1–29:1 are measured for the InP bulk layers under these conditions. Etching does not affect the optical quality of the heterostructures as evidenced from micro-photoluminescence measurements performed on 1.6‐to0.85‐Όm-wide deep etched ridge waveguides. The process is well adapted to the realization of low loss deep ridge waveguides or buried heterostructures
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