328 research outputs found
Decoupling Graphene from SiC(0001) via Oxidation
When epitaxial graphene layers are formed on SiC(0001), the first carbon
layer (known as the "buffer layer"), while relatively easy to synthesize, does
not have the desirable electrical properties of graphene. The conductivity is
poor due to a disruption of the graphene pi-bands by covalent bonding to the
SiC substrate. Here we show that it is possible to restore the graphene
pi-bands by inserting a thin oxide layer between the buffer layer and SiC
substrate using a low temperature, CMOS-compatible process that does not damage
the graphene layer
Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100)
Depth profiling of graphene with high-resolution ion beam analysis is a
practical method for analysis of monolayer thicknesses of graphene. Not only is
the energy resolution sufficient to resolve graphene from underlying SiC, but
by use of isotope labeling it is possible to tag graphene generated from
reacted ethylene. Furthermore, we are able to analyze graphene supported by
oxidized Si(100) substrates, allowing the study of graphene films grown by
chemical vapor deposition on metal and transfered to silicon. This introduces a
powerful method to explore the fundamentals of graphene formation
Pathway to the PiezoElectronic Transduction Logic Device
The information age challenges computer technology to process an
exponentially increasing computational load on a limited energy budget - a
requirement that demands an exponential reduction in energy per operation. In
digital logic circuits, the switching energy of present FET devices is
intimately connected with the switching voltage, and can no longer be lowered
sufficiently, limiting the ability of current technology to address the
challenge. Quantum computing offers a leap forward in capability, but a clear
advantage requires algorithms presently developed for only a small set of
applications. Therefore, a new, general purpose, classical technology based on
a different paradigm is needed to meet the ever increasing demand for data
processing.Comment: in Nano Letters (2015
Impurity-induced diffusion bias in epitaxial growth
We introduce two models for the action of impurities in epitaxial growth. In
the first, the interaction between the diffusing adatoms and the impurities is
``barrier''-like and, in the second, it is ``trap''-like. For the barrier
model, we find a symmetry breaking effect that leads to an overall down-hill
current. As expected, such a current produces Edwards-Wilkinson scaling. For
the trap model, no symmetry breaking occurs and the scaling behavior appears to
be of the conserved-KPZ type.Comment: 5 pages(with the 5 figures), latex, revtex3.0, epsf, rotate, multico
Te covered Si(001): a variable surface reconstruction
At a given temperature, clean and adatom covered silicon surfaces usually
exhibit well-defined reconstruction patterns. Our finite temperature ab-initio
molecular dynamics calculations show that the tellurium covered Si(001) surface
is an exception. Soft longitudinal modes of surface phonons due to the strongly
anharmonic potential of the bridged tellurium atoms prevent the reconstruction
structure from attaining any permanent, two dimensional periodic geometry. This
explains why experiments attempting to find a definite model for the
reconstruction have reached conflicting conclusions.Comment: 4 pages, 3 gif figure
Reversed anisotropies and thermal contraction of FCC (110) surfaces
The observed anisotropies of surface vibrations for unreconstructed FCC metal
(110) surfaces are often reversed from the "common sense" expectation. The
source of these reversals is investigated by performing ab initio density
functional theory calculations to obtain the surface force constant tensors for
Ag(110), Cu(110) and Al(110). The most striking result is a large enhancement
in the coupling between the first and third layers of the relaxed surface,
which strongly reduces the amplitude of out-of-plane vibrations of atoms in the
first layer. This also provides a simple explanation for the thermal
contraction of interlayer distances. Both the anisotropies and the thermal
contraction arise primarily as a result of the bond topology, with all three
(110) surfaces showing similar behavior.Comment: 13 pages, in revtex format, plus 1 postscript figur
Shape Transition in the Epitaxial Growth of Gold Silicide in Au Thin Films on Si(111)
Growth of epitaxial gold silicide islands on bromine-passivated Si(111)
substrates has been studied by optical and electron microscopy, electron probe
micro analysis and helium ion backscattering. The islands grow in the shape of
equilateral triangles up to a critical size beyond which the symmetry of the
structure is broken, resulting in a shape transition from triangle to
trapezoid. The island edges are aligned along directions. We have
observed elongated islands with aspect ratios as large as 8:1. These islands,
instead of growing along three equivalent [110] directions on the Si(111)
substrate, grow only along one preferential direction. This has been attributed
to the vicinality of the substrate surface.Comment: revtex version 3.0, 11 pages 4 figures available on request from
[email protected] - IP/BBSR/93-6
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