1,687 research outputs found
High field transport in strained Si/GeSi double heterostructure: a Fokker-Planck approach
We report calculations of high electric field transport for the case of a
strained Si/GeSi double heterostructure (DHS) considering transport along the
Si channel and by applying the analytical Fokker-Planck approach (FPA), where
the process is modeled as drift-diffusion in energy space. We limit ourselves
to electronic transport in the conduction band of the strained Si, where an
energy shift between the otherwise degenerate six energy valleys characterizes
the band alingment in the DHS. Intervalley phonon scatterings are considered
while intravalley acoustic phonon scattering is ignored, leading to results
valid for high enough temperatures. Our results are compared to previous
theoretical works where Monte Carlo simulations were applied. A reasonable
agreement between the two approaches is obtained in the high electric field
regime.Comment: 8 pages, 3 figure
Interband electron Raman scattering in a quantum wire in a transverse magnetic field
Electron Raman scattering (ERS) is investigated in a parabolic semiconductor
quantum wire in a transverse magnetic field neglecting by phonon-assisted
transitions. The ERS cross-section is calculated as a function of a frequency
shift and magnetic field. The process involves an interband electronic
transition and an intraband transition between quantized subbands. We analyze
the differential cross-section for different scattering configurations. We
study selection rules for the processes. Some singularities in the Raman
spectra are found and interpreted. The scattering spectrum shows
density-of-states peaks and interband matrix elements maximums and a strong
resonance when scattered frequency equals to the "hybrid" frequency or
confinement frequency depending on the light polarization. Numerical results
are presented for a GaAs/AlGaAs quantum wire.Comment: 8 pages, 5 figure
Electron-phonon interaction in quantum-dot/quantum-well semiconductor heterostructures
Polar optical phonons are studied in the framework of the dielectric
continuum approach for a prototypical quantum-dot/quantum-well (QD/QW)
heterostructure, including the derivation of the electron-phonon interaction
Hamiltonian and a discussion of the effects of this interaction on the
electronic energy levels. The particular example of the CdS/HgS QD/QW is
addressed and the system is modelled according to the spherical geometry,
considering a core sphere of material "1" surrounded by a spherically
concentric layer of material "2", while the whole structure is embedded in a
host matrix assumed as an infinite dielectric medium. The strength of the
electron-LO phonon coupling is discussed in details and the polaronic
corrections to both ground state and excited state electron energy levels are
calculated. Interesting results concerning the dependence of polaronic
corrections with the QD/QW structure size are analyzed.Comment: 8 pages, 5 figure
Interface optical phonons in spheroidal dots: Raman selection rules
The contribution of interface phonons to the first order Raman scattering in
nanocrystals with non spherical geometry is analyzed. Interface optical phonons
in the spheroidal geometry are discussed and the corresponding Frohlich-like
electron-phonon interaction is reported in the framework of the dielectric
continuum approach. It is shown that the interface phonon modes are strongly
dependent on the nanocrystal geometry, particularly on the ellipsoid's
semi-axis ratio. The new Raman selection rules have revealed that solely
interface phonon modes with even angular momentum are allowed to contribute to
the first order phonon-assisted scattering of light. On this basis we are able
to give an explanation for the observed low frequency shoulders present in the
Raman cross-section of several II-VI semiconductor nanostructures.Comment: 8 pages, 2 figure
Study of Muon-Pair Production at centre-of-mass energies from 20 to 136 GeV with the ALEPH detector
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