15 research outputs found
Vacancy-engineering implants for high boron activation in silicon on insulator
Get PDFThe formation of boron interstitial clusters is a key limiting factor for the fabrication of highly-conductive ultrashallow doped regions in future silicon-based device technology. Optimized vacancy engineering strongly reduces boron clustering, enabling low-temperature electrical activation to levels rivalling what can be achieved with conventional pre-amorphization and solid-phase epitaxial regrowth. An optimized 160-keV silicon implant in a 55/145nm silicon-on-insulator structure enables stable activation of a 500eV boron implant to a concentration ~ 5x1020cm-3
Diagnostic value of cardiac CT scan in patients with suspected infective endocarditis
No full textInternational audienceMeeting Abstract: P366
Secondary defect profile related to low energy implanted boron measured up to 3.5 µm depth into Si-substrates
No full textInosine-5′-Monophosphate Dehydrogenase Is a Rate-determining Factor for p53-dependent Growth Regulation
No full textReplication-dependent Histone Gene Expression Is Related to Cajal Body (CB) Association but Does Not Require Sustained CB Contact
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The rise and fall of the treponematoses. I. Ecological aspects and international trends. in venereal syphilis.
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