Improved thermal treatment of aluminum alloy 7075

Newly developed tempering treatment considerably increases the corrosion resistance of 7075-T6 alloy and concomitantly preserves its yield strength. The results of tests on samples of the alloy subjected to the above treatments show that when the overaging period is 12 hours /at 325 degrees F/, the alloy exhibits a yield strength of 73,000 psi

Increased resistance to stress corrosion of aluminum alloys

Stress corrosion resistance is increased by distorting surface grain-boundary structure and by interrupting the corrosion and stress corrosion. The first is accomplished by machining or shot peening and the second by removal from and later reexposure to the corrosive environment

Single crystal tubes of beta alumina

Edge-defined, film-fed growth process allows both tubular shapes and single crystallinity to be achieved. Beta alumina in single crystal form makes possible membranes with improved conductivities. Single crystal membranes also eliminate problems associated with electrical short circuiting of membrane due to possible sodium metal diffusion

Ultralight reactive metal foams produced as structural shapes in space: System design

This autonomous experiment for foaming metals in space involved: (1) payload support structure; (2) furnace and foaming apparatus; (3) electronic controls; (4) battery power; and (5) metallurgy. Emphasis was laid on a modular design which was easily modifiable and which offered maximum durability, safety, and failure tolerance

Thick film silicon growth techniques

Thick film silicon ribbons were produced by means of the edge-defined, film-fed growth (EFG) technique. EFG is a process by which single crystals may be grown having a shape controlled by the outside dimensions of a die, the growth taking place from an extremely thin film of liquid fed by capillary action from a crucible below. The principal problem to be overcome in the application of this process to the growth of thick film silicon ribbon relates to the material, such as the shaping die. For the method to operate, this die material must be wet by the liquid silicon. To preserve semiconductor quality, the liquid silicon must not react significantly with the die material. The most promising die material for this application appears to be SiC and SiC-SiO2 admixture. In this case good wetting occurs between the molten silicon and the SiC. C is a relatively unharmful contaminant of Si and additions of quartz to SiC are found to decrease the extent of reaction

Thick film silicon growth techniques

Silicon ribbon growth experiments were conducted using orifices (dies) fabricated from SiC-SiO2 mixtures, fused quartz, SiC, and fine-grained, high density graphite. The best results were obtained from graphite dies. A number of different approaches was tried in modifying the thermal gradient in the dies and in holding the dies. The best results here were obtained from a 0.25-in. thick Mo disc holding a graphite die directly and fitting the die quite closely. Ribbon growths as wide as 9 mm were obtained, while the longest ribbon was 450 x 3.5 x 0.5 mm. Resistivities of ribbons grown from graphite dies have been measured over the range of 0.03 to 1.6 ohm-cm. Some thoughts and literature findings are presented regarding refractory oxide materials as potential orifices

Study of the general mechanism of stress corrosion of aluminum alloys and development of techniques for its detection Quarterly report, 1 May - 31 Aug. 1968

Mechanism of stress corrosion cracking in aluminum alloys and techniques for detection of surface defect

Study of the general mechanism of stress corrosion of aluminum alloys and development of techniques for its detection Quarterly report, 1 Dec. 1967 - 29 Feb. 1968

Stress corrosion of aluminum alloys and techniques for its detectio

Study of the general mechanism of stress corrosion of aluminum alloys and development of techniques for its detection Annual summary report, 2 Jun. 1967 - 1 Jun. 1968

Stress corrosion cracking of high strength aluminum alloys investigated by electrochemical, mechanical, and electron microscopic technique

Simultaneous description of four positive and four negative parity bands

The extended coherent state model is further extended in order to describe two dipole bands of different parities. The formalism provides a consistent description of eight rotational bands. A unified description for spherical, transitional and deformed nuclei is possible. Projecting out the angular momentum and parity from a sole state, the $K^{\pi}=1^+$ band acquires a magnetic character, while the electric properties prevail for the other band. Signatures for a static octupole deformation in some states of the dipole bands are pointed out. Some properties which distinguish between the dipole band states and states of the same parity but belonging to other bands are mentioned. Interesting features concerning the decay properties of the two bands are found. Numerical applications are made for $^{158}$Gd, $^{172}$Yb, $^{228,232}$Th, $^{226}$Ra, $^{238}$U and $^{238}$Pu, and the results are compared with the available data.Comment: 36 pages, 13 figures, 12 table