P-n junctions formed in gallium antimonide

Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required

Controlled substrate cooling improves reproducibility of vapor deposited semiconductor composites

Improved substrate holder preferentially provides more uniform substrate cooling and increases the proportion of vapor flowing over the substrate during growth. Nitrogen gas is constricted in the substrate holder to cool the substrate

Growth of single-crystal gallium nitride

Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possible to grow the GaN at temperatures as high as 825 degrees C, at which point single crystal wafers are deposited on /0001/-oriented sapphire surfaces

Vapor Phase Growth Technique and System for Several III-V Compound Semiconductors Interim Scientific Report

Vapor phase crystal growth and preparation of gallium, indium, arsenic, phosphorous, and antimony alloy semiconductor material

Vapor phase growth technique and system for several 3-5 compound semiconductors Quarterly technical report

Single vapor phase growth system for preparing semiconductor material

Researching creatively with pupils in Assessment for Learning (AfL) classrooms on experiences of participation and consultation

This paper reports on an ESRC TLRP project, Consulting Pupils on the Assessment of their Learning (CPAL). The CPAL project provides an additional theoretical perspective to the ‘educational benefits’ perspective of engaging pupil voice in learning and teaching (Rudduck et al., 2003) through its exploration of pupil rights specifically in relation to assessment issues presently on the policy agenda in the Northern Ireland context – notably Assessment for Learning (AfL). An emergent framework for assessing pupil rights, based on Article 12 of the United Nations Convention on the Rights of the Child (Lundy, 2007), is being used to explore the ways in which AfL classroom practice creates the conditions for increased pupil participation and consultation. Pupil views on their AfL classroom experiences and participation are explored by means of a variety of pupil-centred, creative research methods that engage and stimulate pupils to observe, communicate and analyse their learning and assessment experiences and give meaning to them. This presentation highlights preliminary data based on a sample of 11-14 years pupils' experiences of participation and consultation in classrooms adopting AfL pedagogical principles, and identifies characteristics that support or inhibit pupil participation in their learning and the expression of their views about such matters

Renfrew Close Rain Gardens – Year two monitoring and project evaluation report, May 2017.

The Renfrew Close rain gardens are a community scale, sustainable drainage (SuDs) scheme, in the London Borough of Newham. This was the first large scale retrofit of a raingarden in the borough and was implemented through a partnership consisting of the Environment Agency, the London Borough of Newham, Groundwork London and Thames Water. The Sustainability Research institute at UEL has monitored the hydrological performance of the rain gardens over two years. The report presents results obtained from the second year of monitoring, covering the period of April 2015 – March 2017, and comments on the basin performance and lessons learned over the two years

Direct detection of electron backscatter diffraction patterns.

We report the first use of direct detection for recording electron backscatter diffraction patterns. We demonstrate the following advantages of direct detection: the resolution in the patterns is such that higher order features are visible; patterns can be recorded at beam energies below those at which conventional detectors usefully operate; high precision in cross-correlation based pattern shift measurements needed for high resolution electron backscatter diffraction strain mapping can be obtained. We also show that the physics underlying direct detection is sufficiently well understood at low primary electron energies such that simulated patterns can be generated to verify our experimental data

Interaction of laser generated ultrasonic waves with wedge-shaped samples

Wedge-shaped samples can be used as a model of acoustic interactions with samples ranging from ocean wedges, to angled defects such as rolling contact fatigue, to thickness measurements of samples with non-parallel faces. We present work on laser generated ultrasonic waves on metal samples; one can measure the dominant Rayleigh-wave mode, but longitudinal and shear waves are also generated. We present calculations, models, and measurements giving the dependence of the arrival times and amplitudes of these modes on the wedge apex angle and the separation of generation and detection points, and hence give a measure of the wedge characteristics