Novel detection methods for radiation-induced electron-hole pairs.

Most common ionizing radiation detectors typically rely on one of two general methods: collection of charge generated by the radiation, or collection of light produced by recombination of excited species. Substantial efforts have been made to improve the performance of materials used in these types of detectors, e.g. to raise the operating temperature, to improve the energy resolution, timing or tracking ability. However, regardless of the material used, all these detectors are limited in performance by statistical variation in the collection efficiency, for charge or photons. We examine three alternative schemes for detecting ionizing radiation that do not rely on traditional direct collection of the carriers or photons produced by the radiation. The first method detects refractive index changes in a resonator structure. The second looks at alternative means to sense the chemical changes caused by radiation on a scintillator-type material. The final method examines the possibilities of sensing the perturbation caused by radiation on the transmission of a RF transmission line structure. Aspects of the feasibility of each approach are examined and recommendations made for further work

Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence.

A previous LDRD studying radiation hardened optoelectronic components for space-based applications led to the result that increased neutron irradiation from a fast-burst reactor caused increased responsivity in GaAs photodiodes up to a total fluence of 4.4 x 10{sup 13} neutrons/cm{sup 2} (1 MeV Eq., Si). The silicon photodiodes experienced significant degradation. Scientific literature shows that neutrons can both cause defects as well as potentially remove defects in an annealing-like process in GaAs. Though there has been some modeling that suggests how fabrication and radiation-induced defects can migrate to surfaces and interfaces in GaAs and lead to an ordering effect, it is important to consider how these processes affect the performance of devices, such as the basic GaAs p-i-n photodiode. In this LDRD, we manufactured GaAs photodiodes at the MESA facility, irradiated them with electrons and neutrons at the White Sands Missile Range Linac and Fast Burst Reactor, and performed measurements to show the effect of irradiation on dark current, responsivity and high-speed bandwidth

Microfabricated wire arrays for Z-pinch.

Microfabrication methods have been applied to the fabrication of wire arrays suitable for use in Z. Self-curling GaAs/AlGaAs supports were fabricated as an initial route to make small wire arrays (4mm diameter). A strain relief structure that could be integrated with the wire was designed to allow displacements of the anode/cathode connections in Z. Electroplated gold wire arrays with integrated anode/cathode bus connections were found to be sufficiently robust to allow direct handling. Platinum and copper plating processes were also investigated. A process to fabricate wire arrays on any substrate with wire thickness up to 35 microns was developed. Methods to handle and mount these arrays were developed. Fabrication of wire arrays of 20mm diameter was demonstrated, and the path to 40mm array fabrication is clear. With some final investment to show array mounting into Z hardware, the entire process to produce a microfabricated wire array will have been demonstrated

III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.

The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications

Novel detection methods for radiation-induced electron-hole pairs.

Most common ionizing radiation detectors typically rely on one of two general methods: collection of charge generated by the radiation, or collection of light produced by recombination of excited species. Substantial efforts have been made to improve the performance of materials used in these types of detectors, e.g. to raise the operating temperature, to improve the energy resolution, timing or tracking ability. However, regardless of the material used, all these detectors are limited in performance by statistical variation in the collection efficiency, for charge or photons. We examine three alternative schemes for detecting ionizing radiation that do not rely on traditional direct collection of the carriers or photons produced by the radiation. The first method detects refractive index changes in a resonator structure. The second looks at alternative means to sense the chemical changes caused by radiation on a scintillator-type material. The final method examines the possibilities of sensing the perturbation caused by radiation on the transmission of a RF transmission line structure. Aspects of the feasibility of each approach are examined and recommendations made for further work

THz transceiver characterization : LDRD project 139363 final report.

LDRD Project 139363 supported experiments to quantify the performance characteristics of monolithically integrated Schottky diode + quantum cascade laser (QCL) heterodyne mixers at terahertz (THz) frequencies. These integrated mixers are the first all-semiconductor THz devices to successfully incorporate a rectifying diode directly into the optical waveguide of a QCL, obviating the conventional optical coupling between a THz local oscillator and rectifier in a heterodyne mixer system. This integrated mixer was shown to function as a true heterodyne receiver of an externally received THz signal, a breakthrough which may lead to more widespread acceptance of this new THz technology paradigm. In addition, questions about QCL mode shifting in response to temperature, bias, and external feedback, and to what extent internal frequency locking can improve stability have been answered under this project