Hafnium oxide-based ferroelectric thin-film transistor with a-InGaZnO channel fabricated at temperatures \u3c= 350°C

HfO2-based ferroelectric materials integrated with oxide-based thin-film transistors have been considered as potential candidates for back-end-of-line compatible ferroelectric field-effect transistors, which can be vertically stacked on silicon CMOS circuits to realize high-density neural network applications. However, the formation of ferroelectric orthorhombic phase in HfO2-based materials usually requires an annealing temperature of 400°C or higher. In this work, ferroelectric thin-film transistors (Fe-TFTs) were developed by monolithically integrating HfZrO2 (HZO) ferroelectric capacitors with amorphous indium-gallium-zinc oxide (a-IGZO) TFTs at a maximum processing temperature of 350°C on a glass substrate. A butterfly-shaped C-V curve was clearly observed in the low-temperature annealed metal-HZO-metal capacitor, indicating the formation of ferroelectricity in the HZO layer, as shown in Fig. 1. The positive and negative coercive voltages were 3 V and -2.4 V, respectively. The dielectric constant was 20.65. The field-effect mobility, threshold voltage, subthreshold swing and on/off current ratio of the a-IGZO TFT extracted from the transfer characteristics shown in Fig. 2 were 6.15 cm2V-1s-1, 1.5 V, 0.1 V/dec and 4.3´107, respectively. Fig. 3 shows the transfer hysteresis curves of the low-temperature Fe-TFTs in a metal-ferroelectric-metal-insulator-semiconductor configuration. The Fe-TFTs exhibited large hysteresis memory windows of 2.8 V and 3.8 V when the area ratios between ferroelectric capacitors and gate insulators (AFE / ADE) were 1/8 and 1/12, respectively. The result shows a great potential for back-end-of-line compatible memory applications. Please click Download on the upper right corner to see the full abstract

Intelligent Second-Order Sliding-Mode Control for Chaotic Tracking Problem

[[conferencetype]]國際[[conferencedate]]20140909~20140912[[booktype]]紙本[[booktype]]電子版[[iscallforpapers]]Y[[conferencelocation]]Sapporo, Japa

On resource distribution in network coordination game

Product adoption is an important topic from the marketing perspective. People want to understand how a new product penetrates a market. Researchers propose many models to capture product adoption growth as well as the decision-making process for individuals. In this work, we identify the lack of consideration in current research of how much time people spend on their friends and families. We develop a new game-theoretical framework to model how people spend their time. Also, we analyze the extreme cases in this model. In addition, we do extensive simulations to understand the average case performance of the steady state. We find that our resource allocation model is a potential game and the efficiency of the steady state of the game is very good on average

Identification Of Helicobacter Pylori Antigenic Proteins From Isolates Of Patients With Gastric Pathologies

Helicobacter pylori is a gram negative, spiral-shaped, microaerophilic bacterium, which colonizes the apical side of human gastric epithelial cells and mucous layer. H. pylori infections are associated with various gastric diseases with wide spectrum of clinical outcomes, ranging from gastric cancer to ulceration of the gastrointestinal tract. The pathogenicity of the infection depends on the strain virulence, host susceptibility and environmental co-factors. Thus it is very important to understand the pathogenesis of the disease. Identification of the antigenic proteins of H. pylori, may eventually lead to the development of diagnostic test for this pathogen

Measurements of Thin-Film Elastic Properties by Line-Focus Acoustic Microscopy

Quantitative acoustic microscopy has been used to measure the velocity of leaky surface acoustic waves (SAWs) [1,2]. This technique measures a V(z) curve, which is a record of the voltage output V of the transducer as a function of the distance z between the acoustic lens and the specimen. Line-focus acoustic microscopy (LFAM) allows the measurement of the SAW velocity in specified directions. In earlier papers, LFAM has been used to determine the elastic constants of isotropic thin films [3,4] and anisotropic thin films [5–7]. The directional variation of the SAW velocity of a thin-layer/anisotropic substrate configuration may be quite different from that of the bare substrate. It follows that this variation can be used to determine the elastic properties of thin films