Intermittent generalized synchronization in unidirectionally coupled chaotic oscillators

A new behavior type of unidirectionally coupled chaotic oscillators near the generalized synchronization transition has been detected. It has been shown that the generalized synchronization appearance is preceded by the intermitted behavior: close to threshold parameter value the coupled chaotic systems demonstrate the generalized synchronization most of the time, but there are time intervals during which the synchronized oscillations are interrupted by non-synchronous bursts. This type of the system behavior has been called intermitted generalized synchronization (IGS) by analogy with intermitted lag synchronization (ILS) [Phys. Rev. E \textbf{62}, 7497 (2000)].Comment: 8 pages, 5 figures, using epl.cls; published in Europhysics Letters. 70, 2 (2005) 169-17

Evidence for Factorization in Three-body B --> D(*) K- K0 Decays

Motivated by recent experimental results, we use a factorization approach to study the three-body B --> D(*) K- K0 decay modes. Two mechanisms are proposed for kaon pair production: current-produced (from vacuum) and transition (from B meson). The Bbar0 --> D(*)+ K- K0 decay is governed solely by the current-produced mechanism. As the kaon pair can be produced only by the vector current, the matrix element can be extracted from e+ e- --> K Kbar processes via isospin relations. The decay rates obtained this way are in good agreement with experiment. Both current-produced and transition processes contribute to B- --> D(*)0 K- K0 decays. By using QCD counting rules and the measured B- --> D(*)0 K- K0 decay rates, the measured decay spectra can be understood.Comment: 17 pages, 6 figure

Phenomenological Consequences of Right-handed Down Squark Mixings

The mixings of $d_R$ quarks, hidden from view in Standard Model (SM), are naturally the largest if one has an Abelian flavor symmetry. With supersymmetry (SUSY) their effects can surface via $\tilde d_R$ squark loops. Squark and gluino masses are at TeV scale, but they can still induce effects comparable to SM in $B_d$ (or $B_s$) mixings, while $D^0$ mixing could be close to recent hints from data. In general, CP phases would be different from SM, as may be indicated by recent B Factory data. Presence of non-standard soft SUSY breakings with large $\tan\beta$ could enhance $b\to d\gamma$ (or $s\gamma$) transitions.Comment: Version to appear in Phys. Rev. Let

Phenomenological constraints on minimally coupled exotic lepton triplets

By introducing a set of new triplet leptons (with nonzero hypercharge) that can Yukawa couple to their Standard Model counterparts, new sources of tree-level flavor changing currents are induced via mixing. In this work, we study some of the consequences of such new contributions on processes such as the leptonic decays of gauge bosons, $\ell \rightarrow 3\ell'$ and $\ell \rightarrow \ell' \gamma$ which violate lepton flavor, and mu-e conversion in atomic nuclei. Constraints are then placed on the parameters associated with the exotic triplets by invoking the current low-energy experimental data. Moreover, the new physics contribution to the lepton anomalous magnetic moments is calculated.Comment: 17 pages, 1 figure, 2 tables (REVTeX4.1); v2: refs added, to appear in PR

The Fourth Element: Characteristics, Modelling, and Electromagnetic Theory of the Memristor

In 2008, researchers at HP Labs published a paper in {\it Nature} reporting the realisation of a new basic circuit element that completes the missing link between charge and flux-linkage, which was postulated by Leon Chua in 1971. The HP memristor is based on a nanometer scale TiO$_2$ thin-film, containing a doped region and an undoped region. Further to proposed applications of memristors in artificial biological systems and nonvolatile RAM (NVRAM), they also enable reconfigurable nanoelectronics. Moreover, memristors provide new paradigms in application specific integrated circuits (ASICs) and field programmable gate arrays (FPGAs). A significant reduction in area with an unprecedented memory capacity and device density are the potential advantages of memristors for Integrated Circuits (ICs). This work reviews the memristor and provides mathematical and SPICE models for memristors. Insight into the memristor device is given via recalling the quasi-static expansion of Maxwell's equations. We also review Chua's arguments based on electromagnetic theory.Comment: 28 pages, 14 figures, Accepted as a regular paper - the Proceedings of Royal Society

Safety of cephalosporins in penicillin class severe delayed hypersensitivity reactions

Letter to the edito

Chaotic memristor

We suggest and experimentally demonstrate a chaotic memory resistor (memristor). The core of our approach is to use a resistive system whose equations of motion for its internal state variables are similar to those describing a particle in a multi-well potential. Using a memristor emulator, the chaotic memristor is realized and its chaotic properties are measured. A Poincar\'{e} plot showing chaos is presented for a simple nonautonomous circuit involving only a voltage source directly connected in series to a memristor and a standard resistor. We also explore theoretically some details of this system, plotting the attractor and calculating Lyapunov exponents. The multi-well potential used resembles that of many nanoscale memristive devices, suggesting the possibility of chaotic dynamics in other existing memristive systems.Comment: Applied Physics A (in press

Signatures of Baryogenesis in the MSSM

We revisit the electroweak baryogenesis within the context of the minimal supersymmetric standard model (MSSM), studying its potential collider signatures. We find that this mechanism of baryogenesis does not give a new CP violating signal at the $B$-factories. The first circumstantial evidence may come from enhanced $B_s$ or $B_d$ mixing. If a light right-handed scalar top and Higgs are found as required, a linear collider represents the best possibility for confirming the scenario.Comment: 5 pages, 2 figures. Minor typos fixed. Reference Adde

Self-directed growth of AlGaAs core-shell nanowires for visible light applications

Al(0.37)Ga(0.63)As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core-shell structure and Al composition gradient along the NW axis, producing a potential minimum for carrier confinement. The core-shell structure formed during the growth as a consequence of the different Al and Ga adatom diffusion lengths.Comment: 20 pages, 7 figure

Socioeconomic position and use of hospital-based care towards the end of life: a mediation analysis using the English Longitudinal Study of Ageing

© 2021 The Author(s). Published by Elsevier Ltd. This is an Open Access article under the CC BY 4.0 license Background: Many patients prefer to avoid hospital-based care towards the end of life, yet hospitalisation is common and more likely for people with low socioeconomic position. The reasons underlying this socioeconomic inequality are not well understood. This study investigated health, service access, and social support as potential mediating pathways between socioeconomic position and receipt of hospital-based care towards the end of life. Methods: For this observational cohort study, we included deceased participants from the nationally representative English Longitudinal Study of Ageing of people aged 50 years or older in England. We used a multiple mediation model with age-adjusted and gender-adjusted probit regression to estimate the direct effect of socioeconomic position (measured by wealth and education) on death in hospital and three or more hospital admissions in the last 2 years of life, and the indirect effects of socioeconomic position via three mediators: health and function, access to health-care services, and social support. Findings: 737 participants were included (314 [42·6%] female, 423 [57·4%] male), with a median age at death of 78 years (IQR 71–85). For death in hospital, higher wealth had a direct negative effect (probit coefficient −0·16, 95% CI −0·25 to −0·06), which was not mediated by any of the pathways tested. For frequent hospital admissions, health and function mediated the effect of wealth (−0·04, −0·08 to −0·01), accounting for 34·6% of the total negative effect of higher wealth (−0·13, −0·23 to −0·02). Higher wealth was associated with better health and function (0·25, 0·18 to 0·33). Education was associated with the outcomes only indirectly via wealth. Interpretation: Our findings suggest that worse health and function could partly explain why people with lower wealth have more hospital admissions, highlighting the importance of socioeconomically driven health differences in explaining patterns of hospital use towards the end of life. The findings should raise awareness about the related risk factors of low wealth and worse health for patients approaching the end of life, and strengthen calls for resource allocation to be made on the basis of health need and socioeconomic profile. Funding: Dunhill Medical Trust Fellowship Grant (RTF74/0116)