A 2:1 cocrystal of 6,13-dihydropentacene and pentacene

6,13-Dihydropentacene and pentacene cocrystallize in a ratio of 2:1, i.e. C22H16·0.5C22H14, during vapour transport of commercial pentacene in a gas flow. The crystal structure is monoclinic, space group P21/n, and contains one dihydropentacene molecule and half a pentacene molecule in the asymmetric unit.

Two-photon-induced singlet fission in rubrene single crystal

The two-photon-induced singlet fission was observed in rubrene single crystal and studied by use of femtosecond pump-probe spectroscopy. The location of two-photon excited states was obtained from the nondegenerate two-photon absorption (TPA) spectrum. Time evolution of the two-photon-induced transient absorption spectra reveals the direct singlet fission from the two-photon excited states. The TPA absorption coefficient of rubrene single crystal is 52 cm/GW at 740 nm, as obtained from Z-scan measurements. Quantum chemical calculations based on time-dependent density functional theory support our experimental data

Optoelectronic properties of atomically thin ReSSe with weak interlayer coupling

Rhenium dichalcogenides, such as ReS2 and ReSe2, have attracted a lot of interests due to the weak interlayered coupling in these materials. Studies of rhenium based dichalcogenide alloys will help us understand the differences between binary rhenium dichalcogenides. They will also extend the applications of two-dimensional (2D) materials through alloying. In this work, we studied the optoelectronic properties of ReSSe with a S and Se ratio of 1 : 1. The band gap of the ReSSe alloy is investigated by optical absorption spectra as well as theoretical calculations. The alloy shows weak interlayered coupling, as evidenced by the Raman spectrum. A field-effect transistor based on ReSSe shows typical n-type behavior with a mobility of about 3 cm2 V-1 s-1 and an on/off ratio of 105, together with the in-plane anisotropic conductivity. The device also shows good photoresponse properties, with a photoresponsivity of 8 A W-1. The results demonstrated here will provide new avenues for the study of 2D materials with weak interlayer interactions and in-plane anisotropy

Single-crystal growth of organic semiconductors

Organic single crystals are an established part of the emerging field of organic optoelectronics, because they provide an ideal platform for the studies of the intrinsic physical properties of organic semiconductors. As organic crystals have low melting temperatures and high vapor pressures and are soluble in numerous organic solvents, both solution and gas-phase methods can be used for crystal growth. The nature of the individual molecules and the interactions between molecules determine which growth method is preferred for particular materials. Organic semiconductors with very low decomposition or melting temperatures can be grown from solutions, whereas semiconductors with high vapor pressures can be grown using physical vapor transport methods. High-quality crystals can be obtained using both methods. Crystal growth and crystal engineering of multicomponent organic compounds are emerging fields that can provide a variety of new materials with different physical properties. The growth of large crystals from the melt by zone melting, the Bridgman, or the Czochralski methods has been used to produce stable materials used in wafer manufacturing or large scintillator detectors. In this article, single-crystal growth methods for organic semiconductors are discussed with the aim of preparing high-quality specimens for determination of the basic properties of organic semiconductors.Published versio

Diquino[4,3-b;3 ',4 '-e][1,4]thiaselenine

The title compound, C18H10N2SSe, is a pentacyclic ring system folded along the S center dot center dot center dot Se vector. The central thiaselenine ring adopts a boat conformation and the two halves of the molecule are related by a crystallographic mirror plane