Investigation of laser ablated ZnO thin films grown with Zn metal target: a structural study

High quality ZnO thin films were gown using the pulsed laser deposition technique on (0001) Al$_2$O$_3$ substrates in an oxidizing atmosphere, using a Zn metallic target. We varied the growth conditions such as the deposition temperature and the oxygen pressure. First, using a battery of techniques such as x-rays diffraction, Rutherford Backscattering spectroscopy and atomic force microscopy, we evaluated the structural quality, the stress and the degree of epitaxy of the films. Second, the relations between the deposition conditions and the structural properties, that are directly related to the nature of the thin films, are discussed qualitatively. Finally, a number of issues on how to get good-quality ZnO films are addressed.Comment: To be published in Jour. Appl. Phys. (15 August 2004

Nearly strain-free heteroepitaxial system for fundamental studies of pulsed laser deposition: EuTiO3 on SrTiO3

High quality epitaxial thin-films of EuTiO3 have been grown on the (001) surface of SrTiO3 using pulsed laser deposition. In situ x-ray reflectivity measurements reveal that the growth is two-dimensional and enable real-time monitoring of the film thickness and roughness during growth. The film thickness, surface mosaic, surface roughness, and strain were characterized in detail using ex situ x-ray diffraction. The thicnkess and composition were confirmed with Rutherford Backscattering. The EuTiO3 films grow two-dimensionally, epitaxially, pseudomorphically, with no measurable in-plane lattice mismatch.Comment: 7 pages, 6 figure

In-situ fabrication of cobalt-doped SrFe2As2 thin films by using pulsed laser deposition with excimer laser

The remarkably high superconducting transition temperature and upper critical field of iron(Fe)-based layered superconductors, despite ferromagnetic material base, open the prospect for superconducting electronics. However, success in superconducting electronics has been limited because of difficulties in fabricating high-quality thin films. We report the growth of high-quality c-axis-oriented cobalt(Co)-doped SrFe2As2 thin films with bulk superconductivity by using an in-situ pulsed laser deposition technique with a 248-nm-wavelength KrF excimer laser and an arsenic(As)-rich phase target. The temperature and field dependences of the magnetization showing strong diamagnetism and transport critical current density with superior Jc-H performance are reported. These results provide necessary information for practical applications of Fe-based superconductors.Comment: 8 pages, 3figures. to be published at Appl. Phys. Let

Rate Equations and Scaling in Pulsed Laser Deposition

We study a simplified model for pulsed laser deposition [Phys. Rev. Lett. {\bf 87}, 135701 (2001)] by rate equations. We consider a set of equations, where islands are assumed to be point-like, as well as an improved one that takes the size of the islands into account. The first set of equations is solved exactly but its predictive power is restricted to a few pulses. The improved set of equations is integrated numerically, is in excellent agreement with simulations, and fully accounts for the crossover from continuous to pulsed deposition. Moreover, we analyze the scaling of the nucleation density and show numerical results indicating that a previously observed logarithmic scaling does not apply.Comment: 8 pages, 9 figure

Generalized Smoluchowski equation with correlation between clusters

In this paper we compute new reaction rates of the Smoluchowski equation which takes into account correlations. The new rate K = KMF + KC is the sum of two terms. The first term is the known Smoluchowski rate with the mean-field approximation. The second takes into account a correlation between clusters. For this purpose we introduce the average path of a cluster. We relate the length of this path to the reaction rate of the Smoluchowski equation. We solve the implicit dependence between the average path and the density of clusters. We show that this correlation length is the same for all clusters. Our result depends strongly on the spatial dimension d. The mean-field term KMFi,j = (Di + Dj)(rj + ri)d-2, which vanishes for d = 1 and is valid up to logarithmic correction for d = 2, is the usual rate found with the Smoluchowski model without correlation (where ri is the radius and Di is the diffusion constant of the cluster). We compute a new rate: the correlation rate K_{i,j}^{C} (D_i+D_j)(r_j+r_i)^{d-1}M{\big(\frac{d-1}{d_f}}\big) is valid for d \leq 1(where M(\alpha) = \sum+\infty i=1i\alphaNi is the moment of the density of clusters and df is the fractal dimension of the cluster). The result is valid for a large class of diffusion processes and mass radius relations. This approach confirms some analytical solutions in d 1 found with other methods. We also show Monte Carlo simulations which illustrate some exact new solvable models

High Temperature Thermopower in La_{2/3}Ca_{1/3}MnO_3 Films: Evidence for Polaronic Transport

Thermoelectric power, electrical resistivity and magnetization experiments, performed in the paramagnetic phase of La_{2/3}Ca_{1/3}MnO_3, provide evidence for polaron-dominated conduction in CMR materials. At high temperatures, a large, nearly field-independent difference between the activation energies for resistivity (rho) and thermopower (S), a characteristic of Holstein Polarons, is observed, and ln(rho) ceases to scale with the magnetization. On approaching T_c, both energies become field-dependent, indicating that the polarons are magnetically polarized. Below T_c, the thermopower follows a law S(H) prop. 1/rho (H) as in non saturated ferromagnetic metals.Comment: 10 pages, 5 .gif figures. Phys. Rev B (in press

The influence of Ga+^+-irradiation on the transport properties of mesoscopic conducting thin films

We studied the influence of 30keV Ga$^+$-ions -- commonly used in focused ion beam (FIB) devices -- on the transport properties of thin crystalline graphite flake, La$_{0.7}$Ca$_{0.3}$MnO$_3$ and Co thin films. The changes of the electrical resistance were measured in-situ during irradiation and also the temperature and magnetic field dependence before and after irradiation. Our results show that the transport properties of these materials strongly change at Ga$^+$ fluences much below those used for patterning and ion beam induced deposition (IBID), limiting seriously the use of FIB when the intrinsic properties of the materials of interest are of importance. We present a method that can be used to protect the sample as well as to produce selectively irradiation-induced changes.Comment: 14 pages, 11 figures, will be published in Nanotechnology 201