Investigation of laser ablated ZnO thin films grown with Zn metal target: a structural study

High quality ZnO thin films were gown using the pulsed laser deposition technique on (0001) Al$_2$O$_3$ substrates in an oxidizing atmosphere, using a Zn metallic target. We varied the growth conditions such as the deposition temperature and the oxygen pressure. First, using a battery of techniques such as x-rays diffraction, Rutherford Backscattering spectroscopy and atomic force microscopy, we evaluated the structural quality, the stress and the degree of epitaxy of the films. Second, the relations between the deposition conditions and the structural properties, that are directly related to the nature of the thin films, are discussed qualitatively. Finally, a number of issues on how to get good-quality ZnO films are addressed.Comment: To be published in Jour. Appl. Phys. (15 August 2004

Two-dimensional electron crystals in single and double layers

We present results of Monte-Carlo simulations for finite 2D single and bilayer systems. Strong Coulomb correlations lead to arrangement of particles in configurations resembling a crystal lattice. For binary layers, there exists a particularly rich variety of lattice symmetries which depend on the interlayer separation $d$. We demonstrate that in these mesoscopic lattices there exist two fundamental types of ordering: radial and orientational. The dependence of the melting temperature on $d$ is analyzed, and a stabilization of the crystal compared to a single layer is found.Comment: To be published in Contrib. Plasma Phys., 6 pages, 3 figures, uses cpp2e.cls (included

Sub-monolayer nucleation and growth of complex oxide heterostructures at high supersaturation and rapid flux modulation

We report on the non-trivial nanoscale kinetics of the deposition of novel complex oxide heterostructures composed of a unit-cell thick correlated metal LaNiO3 and dielectric LaAlO3. The multilayers demonstrate exceptionally good crystallinity and surface morphology maintained over the large number of layers, as confirmed by AFM, RHEED, and synchrotron X-ray diffraction. To elucidate the physics behind the growth, the temperature of the substrate and the deposition rate were varied over a wide range and the results were treated in the framework of a two-layer model. These results are of fundamental importance for synthesis of new phases of complex oxide heterostructures.Comment: 13 pages, 6 figure

Nearly strain-free heteroepitaxial system for fundamental studies of pulsed laser deposition: EuTiO3 on SrTiO3

High quality epitaxial thin-films of EuTiO3 have been grown on the (001) surface of SrTiO3 using pulsed laser deposition. In situ x-ray reflectivity measurements reveal that the growth is two-dimensional and enable real-time monitoring of the film thickness and roughness during growth. The film thickness, surface mosaic, surface roughness, and strain were characterized in detail using ex situ x-ray diffraction. The thicnkess and composition were confirmed with Rutherford Backscattering. The EuTiO3 films grow two-dimensionally, epitaxially, pseudomorphically, with no measurable in-plane lattice mismatch.Comment: 7 pages, 6 figure

Generalized Smoluchowski equation with correlation between clusters

In this paper we compute new reaction rates of the Smoluchowski equation which takes into account correlations. The new rate K = KMF + KC is the sum of two terms. The first term is the known Smoluchowski rate with the mean-field approximation. The second takes into account a correlation between clusters. For this purpose we introduce the average path of a cluster. We relate the length of this path to the reaction rate of the Smoluchowski equation. We solve the implicit dependence between the average path and the density of clusters. We show that this correlation length is the same for all clusters. Our result depends strongly on the spatial dimension d. The mean-field term KMFi,j = (Di + Dj)(rj + ri)d-2, which vanishes for d = 1 and is valid up to logarithmic correction for d = 2, is the usual rate found with the Smoluchowski model without correlation (where ri is the radius and Di is the diffusion constant of the cluster). We compute a new rate: the correlation rate K_{i,j}^{C} (D_i+D_j)(r_j+r_i)^{d-1}M{\big(\frac{d-1}{d_f}}\big) is valid for d \leq 1(where M(\alpha) = \sum+\infty i=1i\alphaNi is the moment of the density of clusters and df is the fractal dimension of the cluster). The result is valid for a large class of diffusion processes and mass radius relations. This approach confirms some analytical solutions in d 1 found with other methods. We also show Monte Carlo simulations which illustrate some exact new solvable models

Pulsed Laser Ablation Growth and Doping of Epitaxial Compound Semiconductor Films

Pulsed laser ablation (PLA) has several characteristics that are potentially attractive for the growth and doping of chemically complex compound semiconductors including (1) stoichiometric (congruent) transfer of composition from target to film, (2) the use of reactive gases to control film composition and/or doping via energetic-beam-induced reactions, and (3) low-temperature nonequilibrium phase formation in the laser-generated plasma ``plume.`` However, the electrical properties of compound semiconductors are far more sensitive to low concentrations of defects than are the oxide metals/ceramics for which PLA has been so successful. Only recently have doped epitaxial compound semiconductor films been grown by PLA. Fundamental studies are being carried out to relate film electrical and microstructural properties to the energy distribution of ablated species, to the temporal evolution of the ablation pulse in ambient gases, and to beam assisted surface and/or gas-phase reactions. In this paper the authors describe results of ex situ Hall effect, high-resolution x-ray diffraction, transmission electron microscopy, and Rutherford backscattering measurements that are being used in combination with in situ RHEED and time-resolved ion probe measurements to evaluate PLA for growth of doped epitaxial compound semiconductor films and heterostructures. Examples are presented and results analyzed for doped II-VI, I-III-VI, and column-III nitride materials grown recently in this and other laboratories

Laser-Solid Interaction and Dynamics of the Laser-Ablated Materials

Rapid transformations through the liquid and vapor phases induced by laser-solid interactions are described by the authors` thermal model with the Clausius-Clapeyron equation to determine the vaporization temperature under different surface pressure condition. Hydrodynamic behavior of the vapor during and after ablation is described by gas dynamic equations. These two models are coupled. Modeling results show that lower background pressure results lower laser energy density threshold for vaporization. The ablation rate and the amount of materials removed are proportional to the laser energy density above its threshold. The authors also demonstrate a dynamic source effect that accelerates the unsteady expansion of laser-ablated material in the direction perpendicular to the solid. A dynamic partial ionization effect is studied as well. A self-similar theory shows that the maximum expansion velocity is proportional to c{sub s}{alpha}, where 1 {minus} {alpha} is the slope of the velocity profile. Numerical hydrodynamic modeling is in good agreement with the theory. With these effects, {alpha} is reduced. Therefore, the expansion front velocity is significantly higher than that from conventional models. The results are consistent with experiments. They further study how the plume propagates in high background gas condition. Under appropriate conditions, the plume is slowed down, separates with the background, is backward moving, and hits the solid surface. Then, it splits into two parts when it rebounds from the surface. The results from the modeling will be compared with experimental observations where possible