Study of electro-absorption effects in 1300nm In(Ga)As/GaAs quantum dot materials

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GaAs-based Self-Aligned Stripe Superluminescent Diodes Processed Normal to the Cleaved Facet

We demonstrate GaAs-based superluminescent diodes (SLDs) incorporating a window-like back facet in a self-aligned stripe. SLDs are realised with low spectral modulation depth (SMD) at high power spectral density, without application of anti-reflection coatings. Such application of a window-like facet reduces effective facet reflectivity in a broadband manner. We demonstrate 30mW output power in a narrow bandwidth with only 5% SMD, outline the design criteria for high power and low SMD, and describe the deviation from a linear dependence of SMD on output power as a result of Joule heating in SLDs under continuous wave current injection. Furthermore, SLDs processed normal to the facet demonstrate output powers as high as 20mW, offering improvements in beam quality, ease of packaging and use of real estate. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only

Simulation of Broad Spectral Bandwidth Emitters at 1060 nm for Optical Coherence Tomography

The simulation of broad spectral bandwidth light sources (semiconductor optical amplifiers (SOA) and superluminescent diodes (SLD)) for application in ophthalmic optical coherence tomography is reported. The device requirements and origin of key device parameters are outlined, and a range of single and double InGaAs/GaAs quantum well (QW) active elements are simulated with a view to application in different OCT embodiments. We confirm that utilising higher order optical transitions is beneficial for single QW SOAs, but may introduce deleterious spectral modulation in SLDs. We show how an addition QW may be introduced to eliminate this spectral modulation, but that this results in a reduction of the gain spectrum width. We go on to explore double QW structures where the roles of the two QWs are reversed, with the narrow QW providing long wavelength emission and gain. We show how this modification in the density of states results in a significant increase in gain-spectrum width for a given current. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only

Quantum well and dot self-aligned stripe lasers utilizing an InGaP optoelectronic confinement layer

We demonstrate and study a novel process for fabrication of GaAs-based self-aligned lasers based upon a single over-growth. A lattice-matched n-doped InGaP layer is utilized for both electrical and optical confinements. Single-lateral-mode emission is demonstrated initially from an In0.17Ga0.83 As double quantum well laser emitting similar to 980 nm. We then apply the fabrication technique to a quantum dot laser emitting similar to 1300 nm. Furthermore, we analyze the breakdown mechanism in our devices and discuss the limitations of index guiding in our structures

High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-/spl mu/m multilayer InAs-GaAs quantum-dot lasers. A very low continuous-wave (CW) room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm/sup 2/ are achieved for a three-layer device with a 1-mm HR/HR cavity. For a 2-mm cavity, the CW threshold current density is as low as 17 A/cm/sup 2/ for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets

Rotational kinetics of absorbing dust grains in neutral gas

We study the rotational and translational kinetics of massive particulates (dust grains) absorbing the ambient gas. Equations for microscopic phase densities are deduced resulting in the Fokker-Planck equation for the dust component. It is shown that although there is no stationary distribution, the translational and rotational temperatures of dust tend to certain values, which differ from the temperature of the ambient gas. The influence of the inner structure of grains on rotational kinetics is also discussed.Comment: REVTEX4, 20 pages, 2 figure

Strain balancing of MOVPE InAs/GaAs quantum dots using GaAs0.8P0.2

MOVPE growth of stacked InAs/ GaAs QDs with and without GaAs 0.8 P 0.2 strain balancing layers has been studied. The GaAsP layers reduce the accumulated strain whilst maintaining the electrical characteristics. This should enable closer stacking of QD layers leading to higher gain and improved laser performance

Strain Balancing of Metal-Organic Vapour Phase Epitaxy InAs/GaAs Quantum Dot Lasers

Incorporation of a GaAs0.8P0.2 layer allows strain balancing to be achieved in self-assembled InAs/GaAs quantum dots (QDs) grown by metal organic vapor phase epitaxy. Tuneable wavelength and high density are obtained through growth parameter optimization, with emission at 1.27 μm and QD layer density 3 × 10 10 cm-2. Strain balancing allows close vertical stacking (30 nm) of the QD layers, giving the potential for increased optical gain. Modeling and device characterization indicates minimal degradation in the optical and electrical characteristics unless the phosphorus percentage is increased above 20%. Laser structures are fabricated with a layer separation of 30 nm, demonstrating low temperature lasing with a threshold current density of 100 A/cm2 at 130 K without any facet coating

Sensitivity Advantage of QCL Tunable-Laser Mid-Infrared Spectroscopy over FTIR Spectroscopy

Interest in mid-infrared spectroscopy instrumentation beyond classical FTIR using a thermal light source has increased dramatically in recent years. Synchrotron, supercontinuum, and external-cavity quantum cascade laser light sources are emerging as viable alternatives to the traditional thermal black-body emitter (Globar), especially for remote interrogation of samples ("stand-off" detection) and for hyperspectral imaging at diffraction-limited spatial resolution ("microspectroscopy"). It is thus timely to rigorously consider the relative merits of these different light sources for such applications. We study the theoretical maximum achievable signal-to-noise ratio (SNR) of FTIR using synchrotron or supercontinuum light vs. that of a tunable quantum cascade laser, by reinterpreting an important result that is well known in near-infrared optical coherence tomography imaging. We rigorously show that mid-infrared spectra can be acquired up to 1000 times faster - using the same detected light intensity, the same detector noise level, and without loss of SNR - using the tunable quantum cascade laser as compared with the FTIR approach using synchrotron or supercontinuum light. We experimentally demonstrate the effect using a novel, rapidly tunable quantum cascade laser that acquires spectra at rates of up to 400 per second. We also estimate the maximum potential spectral acquisition rate of our prototype system to be 100,000 per second