Simulation of Broad Spectral Bandwidth Emitters at 1060 nm for Optical Coherence Tomography

The simulation of broad spectral bandwidth light sources (semiconductor optical amplifiers (SOA) and superluminescent diodes (SLD)) for application in ophthalmic optical coherence tomography is reported. The device requirements and origin of key device parameters are outlined, and a range of single and double InGaAs/GaAs quantum well (QW) active elements are simulated with a view to application in different OCT embodiments. We confirm that utilising higher order optical transitions is beneficial for single QW SOAs, but may introduce deleterious spectral modulation in SLDs. We show how an addition QW may be introduced to eliminate this spectral modulation, but that this results in a reduction of the gain spectrum width. We go on to explore double QW structures where the roles of the two QWs are reversed, with the narrow QW providing long wavelength emission and gain. We show how this modification in the density of states results in a significant increase in gain-spectrum width for a given current. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only

Quantum well and dot self-aligned stripe lasers utilizing an InGaP optoelectronic confinement layer

We demonstrate and study a novel process for fabrication of GaAs-based self-aligned lasers based upon a single over-growth. A lattice-matched n-doped InGaP layer is utilized for both electrical and optical confinements. Single-lateral-mode emission is demonstrated initially from an In0.17Ga0.83 As double quantum well laser emitting similar to 980 nm. We then apply the fabrication technique to a quantum dot laser emitting similar to 1300 nm. Furthermore, we analyze the breakdown mechanism in our devices and discuss the limitations of index guiding in our structures

Strain balancing of MOVPE InAs/GaAs quantum dots using GaAs0.8P0.2

MOVPE growth of stacked InAs/ GaAs QDs with and without GaAs 0.8 P 0.2 strain balancing layers has been studied. The GaAsP layers reduce the accumulated strain whilst maintaining the electrical characteristics. This should enable closer stacking of QD layers leading to higher gain and improved laser performance

Strain Balancing of Metal-Organic Vapour Phase Epitaxy InAs/GaAs Quantum Dot Lasers

Incorporation of a GaAs0.8P0.2 layer allows strain balancing to be achieved in self-assembled InAs/GaAs quantum dots (QDs) grown by metal organic vapor phase epitaxy. Tuneable wavelength and high density are obtained through growth parameter optimization, with emission at 1.27 μm and QD layer density 3 × 10 10 cm-2. Strain balancing allows close vertical stacking (30 nm) of the QD layers, giving the potential for increased optical gain. Modeling and device characterization indicates minimal degradation in the optical and electrical characteristics unless the phosphorus percentage is increased above 20%. Laser structures are fabricated with a layer separation of 30 nm, demonstrating low temperature lasing with a threshold current density of 100 A/cm2 at 130 K without any facet coating

Room Temperature Tuneable THz Generation Based on 2nd Order Non-linear Optical Effects in GaAs/AlGaAs Multi-quantum Well Excitons

Summary form only given. We report the generation of tuneable THz radiation (0.75-3 THz) through second order nonlinear effects in the excitation of excitons in GaAs/AlAs multi-quantum wells (MQWs), using readily available continuous wave (CW) laser diodes at room temperature. A MQW GaAs/AlAs sample was designed to have excitonic resonances at a wavelength accessible by commercially available lasers (850nm, 260mW), and have ElHHl-ElLHl splitting of 9.1meV. The sample was grown by MBE with the MQW region containing 30 repeats of 11.9nm GaAs separated by 7.1nm AlAs barriers. These preliminary measurements removed the substrate and cap layer. The sample was then capillary bonded to a diamond heat spreader [1]. Two collimated lasers were used to excite the excitonic resonances. Both lasers were normally incident to the sample surface. Figure 1(a) shows THz power obtained in collinear and crossed polarisations of the lasers with one laser resonant with the HH exciton, and the other laser tuned across the excitonic bands with both lasers operating at 260mW. A clear signal is observed in the case of collinear excitation which scales with the density of states of the excitons. Power dependence measurements confirm this is a second order non-linear effect. Using a simple interferometer, and fitting the measured power with the expected transmission of a Fabry-Perot etalon, frequency measurements indicate the ability to tune the THz radiation from 0.75-3THz. See Figs 1(b-d). For excitation at the peaks of HH and LH, a conversion efficiency of 1.2×10-5 was obtained. This was achieved without the use of plasmonic effects, nor any kind of an antenna, nor an applied E-field to the structure. This offers the opportunity for the creation of compact, low cost, tuneable room temperature THz source

Mode Control in Photonic Crystal Surface Emitting Lasers Through In-Plane Feedback

Mode control in photonic crystal surface emitting lasers is demonstrated through the use of distributed, varying phase feedback introduced through cleaved facets

Gallium Nitride Super-Luminescent Light Emitting Diodes for Optical Coherence Tomography Applications

Optical coherence tomography (OCT) exploits the coherent properties of light to permit noninvasive and in situ imaging of biological tissues. By expanding the range of OCT light sources from the traditional telecoms wavelengths to include ~400 nm gallium nitride (GaN) based superluminescent light emitting diodes (SLEDs) subcellular axial and lateral resolution could be achieved, provided enhanced bandwidth is also achieved. Due to the focus on high-power applications for GaN SLEDs, there has been limited work on increasing the source bandwidth. In this paper, we demonstrate for the first time a ~400 nm GaN SLED with >10 nm bandwidth employed within an OCT system, where an axial resolution of ~7 μm is achieved. Bespoke GaN SLEDs suggest that <;4 μm axial resolution imaging is imminent for short wavelength devices