ITO Thin Films for Low-Resistance Gas Sensors

This research was funded by the Science Committee of the Ministry of Education and Science of the Republic of Kazakhstan (Grant No. AP08856540). The research was carried out with the support of a grant under the Decree of the Government of the Russian Federation No. 220 of 9 April 2010 (Agreement No. 075-15-2022-1132 of 1 July 2022). In addition, this research was partly performed at the Institute of Solid State Physics, University of Latvia (ISSP UL). ISSP UL, as the Centre of Excellence, has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD01-2016-2017-Teaming Phase2 under Grant Agreement No. 739508, project CAMART2.Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and were annealed at temperatures of 500 °C and 600 °C. The structural, optical, electrically conductive and gas-sensitive properties of indium tin oxide thin films were studied. The possibility of developing sensors with low nominal resistance and relatively high sensitivity to gases was shown. The resistance of indium tin oxide thin films annealed at 500 °C in pure dry air did not exceed 350 Ohms and dropped by about 2 times when increasing the annealing temperature to 100 °C. Indium tin oxide thin films annealed at 500 °C were characterized by high sensitivity to gases. The maximum responses to 2000 ppm hydrogen, 1000 ppm ammonia and 100 ppm nitrogen dioxide for these films were 2.21 arbitrary units, 2.39 arbitrary units and 2.14 arbitrary units at operating temperatures of 400 °C, 350 °C and 350 °C, respectively. These films were characterized by short response and recovery times. The drift of indium tin oxide thin-film gas-sensitive characteristics during cyclic exposure to reducing gases did not exceed 1%. A qualitative model of the sensory effect is proposed. © 2022 by the authors. --//-- Published under the CC BY 4.0 license.Science Committee of the Ministry of Education and Science of the Republic of Kazakhstan (Grant No. AP08856540); ISSP UL, as the Centre of Excellence, has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD01-2016-2017-Teaming Phase2 under Grant Agreement No. 739508, project CAMART2

HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of α-Ga2O3 and ε-Ga2O3 phases with a dislocation density of about 2∙1010 cm-2. The insertion of α-Cr2O3 buffer layers resulted in phase-pure α-Ga2O3 films and a fourfold reduction of the dislocation density to 5∙109 cm-2

Impact on the subsurface layers of the single-crystal β-Ga2O3 wafers induced by a mechanical wear

The tribological experiment applied to the gallium oxide wafer led to changes in its structure which can reduce the single crystal perfection. The effect of mechanical wear on the subsurface layers of the β-Ga2O3 single crystal wafers applied to the plane is studied. A decrease in crystallinity within a mosaic structure appearing in the worn samples is revealed with a help of ω-scan analysis, performed by XRD. SEM analysis of the wear track relief of the worn samples showed an emergence of the lamellas framed by domain walls as a result of single crystal splitting

Effect of Si+ ion irradiation of α-Ga 2O3 epitaxial layers on their hydrogen sensitivity

He effect of Si+ ion irradiation of α-Ga2O3 at doses of 8·1012 cm-2, 8·1014 cm-2, and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of α-Ga2O3 layer grown by halide vapor phase epitaxy with implanted Si+ ions allows effective control of its sensitivity to H2, response, and recovery times, as well as varying the operating temperatures. The maximum sensitivity to H2 occurred for samples with Si+ ion irradiation dose of 8·1012 cm-2 at 400ºC. The mechanism of sensitivity of α-Ga2O3 epitaxial layers irradiated with Si+ to H2 is discussed

Gas sensitivity of IBSD deposited TiO2 thin films

TiO2 films of 130 nm and 463 nm in thickness were deposited by ion beam sputter deposition (IBSD), followed by annealing at temperatures of 800 °C and 1000 °C. The effect of H2, CO, CO2, NO2, NO, CH4 and O2 on the electrically conductive properties of annealed TiO2 thin films in the operating temperature range of 200–750 °C were studied. The prospects of IBSD deposited TiO2 thin films in the development of high operating temperature and high stability O2 sensors were investigated. TiO2 films with a thickness of 130 nm and annealed at 800 °C demonstrated the highest response to O2, of 7.5 arb.un. when exposed to 40 vol. %. An increase in the annealing temperature of up to 1000 °C at the same film thickness made it possible to reduce the response and recovery by 2 times, due to changes in the microstructure of the film surface. The films demonstrated high sensitivity to H2 and nitrogen oxides at an operating temperature of 600 °C. The possibility of controlling the responses to different gases by varying the conditions of their annealing and thicknesses was shown. A feasible mechanism for the sensory effect in the IBSD TiO2 thin films was proposed and discussed