An analytical model for the threshold voltage of a narrow-width MOSFET

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Improvement on 1/f noise properties of nitrided n-MOSFET's by backsurface argon bombardment

The 1/f noise properties of nitrided n-MOSFET's bombarded by low-energy (550 eV) argon-ion beam are investigated. It is found that after bombardment, 1/f noise, and its degradation under hot-carrier stress are reduced, and both exhibit a turnaround behavior with bombardment time for a given ion energy and intensity. The physical mechanism involved is probably enhanced interface hardness resulting from bombardment-induced stress relief in the vicinity of the oxide/Si interface. Moreover, from the frequency dependence of the noise, it is revealed that the nitrided devices have a nonuniform trap distribution increasing toward the oxide/Si interface which can be modified by the backsurface bombardment.published_or_final_versio

Interface properties of NO-annealed N2O-grown oxynitride

The oxide/Si interface properties of gate dielectric prepared by annealing N2O-grown oxide in an NO ambient are intensively investigated and compared to those of O2-grown oxide with the same annealing conditions. Hot-carrier stressings show that the former has a harder oxide/Si interface and near-interface oxide than the latter. As confirmed by SIMS analysis, this is associated with a higher nitrogen peak concentration near the oxide/Si interface and a larger total nitrogen content in the former, both arising from the initial oxidation in N2O instead of O2.published_or_final_versio

Dynamic-stress-induced enhanced degradation of 1/f noise in n-MOSFET's

AC-stress-induced degradation of 1/f noise is investigated for n-MOSFET's with thermal oxide or nitrided oxide as gate dielectric, and the physical mechanisms involved are analyzed. It is found that the degradation of 1/f noise under ac stress is far more serious than that under dc stress. For an ac stress of VG = 0 approx. 0.5 VD, generations of both interface state (ΔDit) and neutral electron traps (ΔNet) are responsible for the increase of 1/f noise, with the former being dominant. For another ac stress of VG = 0 approx. VD, a large increase of 1/f noise is observed for the thermal-oxide device, and is attributed to enhanced ΔNet and generation of another specie of electron traps, plus a small amount of ΔDit. Moreover, under the two types of ac stress conditions, much smaller degradation of 1/f noise is observed for the nitrided device due to considerably improved oxide/Si interface and near-interface oxide qualities associated with interfacial nitrogen incorporation.published_or_final_versio

Electrical properties of different NO-annealed oxynitrides

This journal issues contain proceedings of the 2nd International Conference on Amorphous and Crystalline Insulating Thin Films II ... 1998Performances of gate dielectrics prepared by double-nitridation in NO and N2O are investigated. Stronger oxide/Si interface bonding, less charge trapping and larger charge-to-breakdown are observed for such gate dielectrics than singly NO-nitrided gate dielectric. The physical mechanisms behind the findings are attributed to larger nitrogen peak concentration located almost at the oxide/Si interface and total nitrogen content near the oxide/Si interface of these gate dielectrics.postprin

Epidemiological updates of venous thromboembolism in a Chinese population

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1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses

Degradation mechanisms contributing to increased 1/f noise of n-channel metaloxide-semiconductor field-effect transistors (n-MOSFETs) after different hot-carrier stresses are investigated. It is demonstrated that for any hot-carrier stress, the stress-induced enhancement of 1/f noise is mainly attributed to increased carrier-number fluctuation arising from created oxide traps, while enhanced surface-mobility fluctuation associated with electron trapping at preexisting and generated fast interface states and near-interface oxide traps is also responsible under maximum substrate- and gate-current stresses. Besides thermal-oxide n-MOSFETs, nitrided-oxide devices are also used to further support the above analysis. © 1999 American Institute of Physics.published_or_final_versio

Effectiveness of proximal intra-operative salvage Palmaz stent placement for endoleak during endovascular aneurysm repair

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Angioplasty of forearm arteries as a finger salvage procedure for patient with end-stage renal failure

Case Reportpublished_or_final_versio

Fully-distributed joint clock synchronization and ranging in wireless sensor networks under exponential delays

In this paper, we study the global clock synchro- nization and ranging problem for wireless sensor networks in the presence of unknown exponential delays using the two- way message exchange mechanism. Based on the Alternating Direction Method of Multipliers (ADMM), we propose a fully- distributed synchronization and ranging algorithm which has low communication overhead and computation cost. Simulation results show that the proposed algorithm achieves better accuracy than consensus algorithm, and can always converge to the centralized optimal solution.published_or_final_versio