33,134 research outputs found

    MicroRNA410 Inhibits Pulmonary Vascular Remodeling via Regulation of Nicotinamide Phosphoribosyltransferase

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    Nicotinamide phosphoribosyltransferase (NAMPT) upregulation in human pulmonary artery endothelial cells (hPAECs) is associated with pulmonary arterial hypertension (PAH) progression and pulmonary vascular remodeling. The underlying mechanisms regulating NAMPT expression are still not clear. In this study, we aimed to study the regulation of NAMPT expression by microRNA410 (miR410) in hPAECs and explore the role of miR410 in the pathogenesis of experimental pulmonary hypertension. We show that miR410 targets the 3' UTR of NAMPT and that, concomitant with NAMPT upregulation, miR410 is downregulated in lungs of mice exposed to hypoxia-induced pulmonary hypertension (HPH). Our results also demonstrate that miR410 directly inhibits NAMPT expression. Overexpression of miR410 in hPAECs inhibits basal and VEGF-induced proliferation, migration and promotes apoptosis of hPAECs, while miR410 inhibition via antagomirs has the opposite effect. Finally, administration of miR410 mimics in vivo attenuated induction of NAMPT in PAECs and prevented the development of HPH in mice. Our results highlight the role of miR410 in the regulation of NAMPT expression in hPAECs and show that miR410 plays a potential role in PAH pathobiology by targeting a modulator of pulmonary vascular remodeling

    Heavy and Light Quarks with Lattice Chiral Fermions

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    The feasibility of using lattice chiral fermions which are free of O(a)O(a) errors for both the heavy and light quarks is examined. The fact that the effective quark propagators in these fermions have the same form as that in the continuum with the quark mass being only an additive parameter to a chirally symmetric antihermitian Dirac operator is highlighted. This implies that there is no distinction between the heavy and light quarks and no mass dependent tuning of the action or operators as long as the discretization error O(m2a2)O(m^2 a^2) is negligible. Using the overlap fermion, we find that the O(m2a2)O(m^2a^2) (and O(ma2)O(ma^2)) errors in the dispersion relations of the pseudoscalar and vector mesons and the renormalization of the axial-vector current and scalar density are small. This suggests that the applicable range of mama may be extended to ∼0.56\sim 0.56 with only 5% error, which is a factor of ∼2.4\sim 2.4 larger than that of the improved Wilson action. We show that the generalized Gell-Mann-Oakes-Renner relation with unequal masses can be utilized to determine the finite mama errors in the renormalization of the matrix elements for the heavy-light decay constants and semileptonic decay constants of the B/D meson.Comment: final version to appear in Int. Jou. Mod. Phys.

    Optical spectroscopy study on CeTe3_3: evidence for multiple charge-density-wave orders

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    We performed optical spectroscopy measurement on single crystal of CeTe3_3, a rare-earth element tri-telluride charge density wave (CDW) compound. The optical spectra are found to display very strong temperature dependence. Besides a large and pronounced CDW energy gap being present already at room temperature as observed in earlier studies, the present measurement revealed the formation of another energy gap at smaller energy scale at low temperature. The second CDW gap removes the electrons near EF_F which undergo stronger scattering. The study yields evidence for the presence of multiple CDW orders or strong fluctuations in the light rare-earth element tri-telluride.Comment: 5 figure

    Strong interface-induced spin-orbit coupling in graphene on WS2

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    Interfacial interactions allow the electronic properties of graphene to be modified, as recently demonstrated by the appearance of satellite Dirac cones in the band structure of graphene on hexagonal boron nitride (hBN) substrates. Ongoing research strives to explore interfacial interactions in a broader class of materials in order to engineer targeted electronic properties. Here we show that at an interface with a tungsten disulfide (WS2) substrate, the strength of the spin-orbit interaction (SOI) in graphene is very strongly enhanced. The induced SOI leads to a pronounced low-temperature weak anti-localization (WAL) effect, from which we determine the spin-relaxation time. We find that spin-relaxation time in graphene is two-to-three orders of magnitude smaller on WS2 than on SiO2 or hBN, and that it is comparable to the intervalley scattering time. To interpret our findings we have performed first-principle electronic structure calculations, which both confirm that carriers in graphene-on-WS2 experience a strong SOI and allow us to extract a spin-dependent low-energy effective Hamiltonian. Our analysis further shows that the use of WS2 substrates opens a possible new route to access topological states of matter in graphene-based systems.Comment: Originally submitted version in compliance with editorial guidelines. Final version with expanded discussion of the relation between theory and experiments to be published in Nature Communication

    The magnetoresistance and Hall effect in CeFeAsO: a high magnetic field study

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    The longitudinal electrical resistivity and the transverse Hall resistivity of CeFeAsO are simultaneously measured up to a magnetic field of 45T using the facilities of pulsed magnetic field at Los Alamos. Distinct behaviour is observed in both the magnetoresistance Rxx({\mu}0H) and the Hall resistance Rxy({\mu}0H) while crossing the structural phase transition at Ts \approx 150K. At temperatures above Ts, little magnetoresistance is observed and the Hall resistivity follows linear field dependence. Upon cooling down the system below Ts, large magnetoresistance develops and the Hall resistivity deviates from the linear field dependence. Furthermore, we found that the transition at Ts is extremely robust against the external magnetic field. We argue that the magnetic state in CeFeAsO is unlikely a conventional type of spin-density-wave (SDW).Comment: 4 pages, 3 figures SCES2010, To appear in J. Phys.: Conf. Ser. for SCES201
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