Microstructural Evolution in Thin Films of Electronic Materials

Contains reports on ten research projects.Joint Services Electronics Program Contract DAAL03-89-C-0001National Science FoundationU.S. Air Force - Office of Scientific Research Contract AFOSR 85-0154Semiconductor Research CorporationAT&TInternational Business Machines CorporationNational Institutes of Healt

Microstructural Evolution in Thin Films of Electronic Materials

Contains reports on eight research projects.National Science Foundation (Grant ECS 85-06565)U.S. Air Force - Office of Scientific Research (Contract AFOSR 85-0154)National Science Foundation-Materials Research Laboratory(Grant DMR 81-19285)National Science Foundation (Grant DMR 85-06030)International Business Machines, Inc. Faculty Development AwardMitsui Career Development AwardInternational Business Machines, Inc.Semiconductor Research Corporation (Contract 86-05-080)Joint Services Electronics Program (Contract DAAG-29-83-K-0003)Charles Stark Draper LaboratoryDefense Advanced Research Projects Agency (DARPA)Nippon Telegraph and Telephone, Inc

NONLINEAR OPTICS AT INTERFACES

Two aspects of surface nonlinear optics are explored in this thesis. The first part is a theoretical and experimental study of nonlinear intraction of surface plasmons and bulk photons at metal-dielectric interfaces. The second part is a demonstration and study of surface enhanced second harmonic generation at rough metal surfaces. A general formulation for nonlinear interaction of surface plasmons at metal-dielectric interfaces is presented and applied to both second and third order nonlinear processes. Experimental results for coherent second and third harmonic generation by surface plasmons and surface coherent antiStokes Raman spectroscopy (CARS) are shown to be in good agreement with the theory

Radiation effects in MIT Lincoln Lab 3DIC technology

We characterized TID effects in MITLL 3DIC technology. We found that the effects were comparable for nFETs on the bottom tier with that on single tier wafers. Less positive charge build-up is observed for wide nFETs on the upper tiers, and this is due to the absence of silicon below the BOX. Other results indicate that MITLL 3DIC technology can be hardened to ionizing radiation by modifying the BOX.United States. Defense Threat Reduction Agency (Air Force Contract FA8721-05-C-0002)United States. Defense Advanced Research Projects Agenc

Channel engineering of SOI MOSFETs for RF applications

Channel engineering of SOI MOSFETs is explored by altering ion implantation without adding any new fabrication steps to the standard CMOS process. The effects of implantation on characteristics important for RF applications, such as transconductance, output resistance, breakdown voltage, are compared. Data show that the best overall RF MOSFET has no body and drain-extension implants.Defense Advanced Research Projects Agency (Air Force Contract FA8721-05-C-0002

Wafer-scale 3D integration of silicon-on-insulator RF amplifiers

RF amplifiers are demonstrated using a three- dimensional (3D) wafer-scale integration technology based on silicon-on-insulator (SOI) CMOS process. This new 3D implementation reduces the amplifier size and shortens interconnects for smaller loss and delay. In addition, 3D integration allows the stacking of wafers fabricated using different process technologies to optimize the overall circuit performance at the lowest cost. In RF amplifier examples, MOSFETs and passive components are placed on separate tiers to reduce the size. Measured amplifier performance agrees well with simulation and footprint reduction of approximately 40% comparing to conventional 2D layout can be achieved.United States. Defense Advanced Research Projects Agency (Air Force Contract FA8721-05-C-0002