Contains reports on eight research projects.National Science Foundation (Grant ECS 85-06565)U.S. Air Force - Office of Scientific Research (Contract AFOSR 85-0154)National Science Foundation-Materials Research Laboratory(Grant DMR 81-19285)National Science Foundation (Grant DMR 85-06030)International Business Machines, Inc. Faculty Development AwardMitsui Career Development AwardInternational Business Machines, Inc.Semiconductor Research Corporation (Contract 86-05-080)Joint Services Electronics Program (Contract DAAG-29-83-K-0003)Charles Stark Draper LaboratoryDefense Advanced Research Projects Agency (DARPA)Nippon Telegraph and Telephone, Inc

Ajuria, Sergio

Cammarata, Robert C.

Chen, Chenson K.

Cho, Jaeshin

Chong, Tow

Clevenger, Lawrence A.

DeAvillez, Roberto R.

Dubner, Andrew D.

Floro, Jerrold A.

Fonstad, Clifton G., Jr.

Frost, Harold J.

Gosele, Ulrich

Im, James S.

Jiran, Eva

Judas, Andreas

Kahn, Hal

Liu, Yauchin

Longworth, Hai P.

Melngailis, John

Olson, John

Palmer, Joyce E.

Quek, Hui Meng

Ro, Jaesang

Smith, Henry I.

Thompson, Carl V., III

Tu, King-Ning

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Chapter 2. Microstructural EvolutionChapter 2. Microstructural Evolution in Thin Films ofElectronic MaterialsAcademic and Research StaffProfessor Carl V. Thompson IIIVisiting ScientistsProfessor Roberto DeAvillez,' Professor Robert C. Cammarata,2 Professor Ulrich Gosele3Collaborating ScientistsChenson K. Chen,4 Professor Clifton G. Fonstad, Jr., HaroldDavid A. Smith,6 Professor Henry I. Smith, King N. Tu 7J. Frost,5 Dr. John Melngailis,Graduate StudentsSergio Ajuria, Jaeshin Cho, Tow Chong, Lawrence Clevenger, Andrew D. Dubner, Jerrold A.Floro, James S. Im, Eva Jiran, Hal Kahn, Yauchin Liu, Hai Longworth, Joyce E. Palmer, HuiMeng Quek, Jaesang RoUndergraduate StudentsAndreas Judas, John Olson, Howard ZollaSupport StaffCelia Slattery2.1 Grain Growth in ThinFilmsSponsorsNational Science Foundation(Grant ECS 85-06565)U.S. Air Force - Office of Scientific Research(Contract AFOSR 85-0154)Project StaffSergio Ajuria, Hui Meng Quek, Professor CarlV. Thompson III, Professor Henry I. SmithPolycrystalline metallic and semiconductorfilms are used in a wide variety of electronicand magnetic devices and circuits. The grainsize, grain orientations, and grain size dis-1 Pontificia Universidade Cat61lica, Department of Materials Science and Metallurgy, Rio de Janiero, Brazil.2 Johns Hopkins University, Department of Materials Science.3 Duke University, Department of Mechanical Engineering.4 MIT Lincoln Laboratory.5 Dartmouth College, Thayer School of Engineering.6 I.B.M., Thomas J. Watson Research Center.7 Ibid.Chapter 2. Microstructural Evolutiontributions strongly affect the properties ofthese films. We are studying microstructuralevolution through normal and secondarygrain growth in thin films. Secondary graingrowth often leads to very large grains (up to500 times the film thickness) with restrictedcrystallographic orientations. We arestudying the effects of film thickness, deposi-tion conditions, substrate topography, laserillumination, ion-bombardment, dopant con-centrations, as well as other parameters, ongrain growth.2.2 Modelling ofMicrostructural Evolution inThin FilmsSponsorsU.S. Air Force - Office of Scientific Research(Contract AFOSR-85-01 54)National Science Foundation(Grants DMR 81-19285)and DMR 85-06030)International Business Machines, Inc.Faculty Development AwardMitsui Career Development AwardProject StaffProfessor Carl V. Thompson III, Harold J.Frost, Jerrold A. Floro, Yauchin LiuWe are developing analytic models fornormal and secondary grain growth in con-tinuous thin films as well as particlecoarsening in discontinuous films. Theeffects of surface or interface energyanistropy play especially important roles inthese processes. We have developed com-puter models for film formation by crystalnucleation and growth to impingement undera variety of conditions. The topology andgeometry of grain structures have beenshown to strongly depend on the conditionsof film formation. We have also developed acomputer model for two-dimensional normalgrain growth and are extending this modelfor treatment of secondary grain growth.2.3 Post-NucleationHeteroepitaxy in LatticeMismatched SystemsSponsorsU.S. Air Force - Office of Scientific Research(Contract AFOSR 85-0154)National Science Foundation -Materials Research Laboratory(Grant DMR 81-19285)Project StaffJoyce E. Palmer, Jerrold A. Floro, YauchinLiu, Tow Chong, Professor Carl V. ThompsonIII, Professor Clifton G. Fonstad, Jr., Pro-fessor Henry I. SmithHeteroepitaxial growth of films with poorlattice matching with single crystal substratesoften leads to films with high bulk as well asinterface defect densities. When atom byatom or layer growth occurs, bulk defects aregenerally generated during strain accommo-dation well after film nucleation and the earlystages of film growth. Alternatively, strainaccommodation can occur through formationof low energy interfaces during competitivegrowth of grains or nuclei which initiallyhave a variety of orientations. We are inves-tigating these post-nucleation epitaxial proc-esses in continuous and discontinuous films.Model systems include GaAs-on-silicon andepitaxial metals on alkali halide crystals.2.4 Thin Film Zone MeltingRecrystallization of SiliconSponsorInternational Business Machines, Inc.Project StaffJames S. Im, ChensonCarl V. Thompson IIIK. Chen, ProfessorTechniques for producing device-qualitysingle-crystal films of semiconductors oninsulator (SOI) are of interest for multilayeror multimaterial integrated circuits, displaydevices and low-cost, high-efficiency solarcells. Such films can be obtained throughdirectional solidification of confined thin24 RLE Progress Report Number 131Chapter 2. Microstructural Evolutionfilms (zone melting recrystallization, ZMR).While there are analogies to bulk crystalgrowth, in ZMR there are also phenomenaand mechanisms unique to thin-film solidifi-cation of radiatively heated silicon. Directobservation of dynamic and static liquid-solid interfaces complements theoreticalmodeling of solidification. We are studyingthese phenomena in order to develop meansof controlling and optimizing thin filmgrowth by ZMR.2.5 Capillary Instabilities inThin Solid FilmsProject StaffEva Jiran, Professor Carl V. Thompson IIIVery thin metallic and semiconductor films(< 200 A) are being used in an increasingvariety of applications. Most solid films areused on substrates with which they would, inequilibrium, form non-zero contact angles.Therefore, even solid films tend to becomediscontinuous or bead in order to reducetheir total film/substrate interface energy.This phenomena occurs in both continuousand patterned films. The rate of solid statebeading is a strong function of the dimen-sions, as well as the microstructure, of thefilm or line. For example, the beading raterapidly increases with decreasing film thick-ness. We are experimentally characterizingthe kinetics of beading of thin films of goldon SiO2 . Film patterning allows independentstudy of both hole formation and holegrowth. These eventually lead to completebeading.2.6 Kinetics of Thin FilmSilicide FormationSponsorInternational Business Machines, Inc.Project StaffLawrence Clevenger, Professor RobertoDeAvillez, Professor Robert C. Cammarata,Andreas Judas, John Olson, Professor CarlV. Thompson III, King N. Tu, Professor UlrichGoseleCurrently, there is considerable interest in theuse of refractory metals or refractory metalsilicides as interconnects, as gate materials inMOS devices and for low contact resistancediffusion barriers at metal-silicon contacts inintegrated circuits. One method of silicideformation is through reaction of metallic thinfilms with silicon substrates or polycrystallinesilicon films. This application raises funda-mental questions about the rate and productsof thin film metal-silicon reactions. There arefour critical parameters in analysis and mod-eling of these reactions; interdiffusivities, freeenergy changes, surface energies, and inter-face reaction constants. Of these, the firsttwo parameters are fairly well understoodand can be predicted. The purpose of thisproject is to develop a better understandingand predictive capability for the last twoparameters. Surface energies are beingdetermined through silicide precipitationexperiments and the kinetics of thin filmreactions are being studied through thermal,TEM, and x-ray analysis of reactions in multi-layer thin films.2.7 Reliability andMicrostructures ofInterconnectsSponsorsSemiconductor Research Corporation(Contract 86-05-080)Joint Services Electronics Program(Contract DAAG-29-83-K-0003)Project StaffJaeshin Cho, Hal Kahn, Hai Longworth, Pro-fessor Carl V. Thompson IIIWe are developing new techniques whichallow statistical characterization of failure ofcontacts and interconnects for silicon-basedintegrated circuit technology. We are usingthese techniques to correlate failure rates andmechanisms with microstructures of inter-connect lines and contact diffusion barriers.We are also investigating techniques for con-trolling microstructures in order to improvecontact and interconnect reliability, especiallyunder conditions which can lead toelectromigration.Chapter 2. Microstructural Evolution2.8 Focused Ion Beam InducedDepositionSponsorsCharles Stark Draper LaboratoryDefense Advanced Research Projects Agency(DARPA)International Business Machines, Inc.Nippon Telegraph and Telephone, Inc.Project StaffJaesang Ro, Andrew D. Dubner, Dr. JohnMelngailis, Professor Carl V. Thompson IIIIt is now possible to produce ion beams withdiameters as small as 500A. This permits useof focused ion beams for high spatial resol-ution implantation, sputtering and deposi-tion. In principal, the latter can be used inintegrated circuit mask repair or high resol-ution direct writing of interconnects. We areinvestigating the mechanisms of ion-beam-induced chemical vapor deposition frommetal-bearing gases.PublicationsAtwater, H.A., C.V. Thompson, and H.I.Smith, "Interface Limited Grain BoundaryMotion During Ion Bombardment," Phys.Rev. Lett. 60:112 (1988).Atwater, H.A., C.V. Thompson, and H.I.Smith, "Ion Bombardment EnhancedGrain Growth in Germanium, Silicon andGold Thin Films," J. Appl. Phys. 64:2337(1988).Atwater, H.A., and C.V. Thompson, "PointDefect Enhanced Grain Growth in SiliconThin Films - The Role of Ion Bombard-ment and Dopants," Appl. Phys. Letts.53:2155 (1988).Atwater, H.A., C.V. Thompson, and H.I.Smith, "Mechanisms for CrystallographicOrientation in the Crystallization of ThinSilicon Films From the Melt," J. Cryst.Growth 3:1232 (1988).Clevenger, L.A., C.V. Thompson, R.C.Cammarata, and K.-N. Tu, "ReactionKinetics of Nickel/Silicon MultilayerFilms," Appl. Phys. Lett. 52:7957 (1988).Frost, H.J., C.V. Thompson, C.L. Howe, andJ. Whang, "A Two-Dimensional ComputerSimulation of Capillatory-Driven GrainGrowth: Preliminary Results," ScriptaMetallurgica 22:65 (1988).Frost, H.J., and C.V. Thompson, "ComputerSimulation of Microstructure Evolution inThin Films," J. Electron. Mater. 17:447(1988).Kim, H.-J., and C.V. Thompson, "KineticModeling of Grain Growth in Polycrystal-line Silicon Films Doped with Phosphorusor Boron," J. Electrochem. Soc. 135:2312(1988).Thompson, C.V., "Coarsening of Particles ona Planar Substrate: Interface EnergyAnistropy and Application to GrainGrowth in Thin Films," Acta Metallurgica36:2929 (1988).Thompson, C.V., "Dopant and Ion BeamEnhanced Grain Growth in PolycrystallineSilicon Films," in Diffusion Processes inHigh Technology Materials, eds. D. Guptaand A.D. Romig, Jr., and M.A. Daynanda,33. Aedermannsdorf, Switzerland: Trans.Tech. Publications Limited, 1988.Conference ProceedingsAtwater, H.A., C.V. Thompson, and H.I.Smith, "Transition State Model for GrainBoundary Motion During Ion Bombard-ment," Materials Research Society Sym-posium Proceedings 100:345 (1988).Clevenger, L.A., C.V. Thompson, R.C.Cammarata, and K.-N. Tu, "The Effect ofLayer Thickness on Reaction Kinetics/Sil-icon Multilayer Films," Materials ResearchSociety Symposium Proceedings 103:191(1988).Im, J.S., C.K. Chen, C.V. Thompson, H.Tomita, and M.W. Geis, "Liquid-SolidInterface Morphologies and Defect Struc-tures in Zone-Melting RecrystallizedSilicon-on-Insulator Films," MaterialsResearch Society Symposium Proceedings107:169 (1988).26 RLE Progress Report Number 131Chapter 2. Microstructural EvolutionKim, H.-J., and C.V. Thompson, "A Modelfor the Effects of Dopants on GrainGrowth in Polysilicon Thin Films,"Materials Research Society SymposiumProceedings 106:143 (1988).Thompson, C.V., "Grain Growth in Polycrys-talline Silicon Films," Materials ResearchSociety Symposium Proceedings 106:143(1988).MIT ThesisKim, H.-J., Grain Growth in Doped Polycrys-talline Silicon Films. Ph.D. diss., Dept. ofMaterials Sci. and Eng., MIT, 1988.Professor Carl V. Thompson ///Dr. John MeIngailis28 RLE Progress Report Number 131

Microstructural Evolution in Thin Films of Electronic Materials

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Microstructural Evolution in Thin Films of Electronic Materials

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