Monte Carlo simulation of electron and proton irradiation of carbon nanotube and graphene transistors

Carbon-based nanotechnology electronics can provide high performance, low-power and low-weight solutions, which are very suitable for innovative aerospace applications. However, its application in the space environment where there is a radiation hazard, requires an assessment of the response of such electronic products to the background irradiance. To explore the potential of carbon-based nanotechnology, Monte Carlo simulations of radiation interacting with a gate-all-around carbon nanotube (GAACNFET) and a top-gated graphene FET are presented. Geant4 is used to calculate the energy deposited into the dielectric layers and the displacement damage in the nanosemiconductors under proton and electron irradiation. Both an unshielded and two cases with 250 μm thick NiFe and Pb shielding are tested at a fluence of 1015 m-2. The energy range of the particles considered is 10-2 – 102 MeV for the unshielded and 1 – 103 MeV for the shielded case. The results indicate that the graphene transistor is more susceptible to displacement damage than the CNT-based syste

Three-dimensional Finite Elements method simulation of Total Ionizing Dose in 22 nm bulk nFinFETs

Finite Elements Method simulation of Total Ionizing Dose effects on 22 nm bulk Fin Field Effect Transistor (FinFET) devices using the commercial software Synopsys Sentaurus TCAD is presented. The simulation parameters are extracted by calibrating the charge trapping model to experimental results on 400 nm SiO2 capacitors irradiated under zero bias. The FinFET device characteristics are calibrated to the Intel 22 nm bulk technology. Irradiation simulations of the transistor performed with all terminals unbiased reveal increased hardness up to a total dose of 1 MRad(SiO2)

Three-dimensional Finite Elements Method simulation of Total Ionizing Dose in 22nm bulk nFinFETs

AbstractFinite Elements Method simulation of Total Ionizing Dose effects on 22nm bulk Fin Field Effect Transistor (FinFET) devices using the commercial software Synopsys Sentaurus TCAD is presented. The simulation parameters are extracted by calibrating the charge trapping model to experimental results on 400nm SiO2 capacitors irradiated under zero bias. The FinFET device characteristics are calibrated to the Intel 22nm bulk technology. Irradiation simulations of the transistor performed with all terminals unbiased reveal increased hardness up to a total dose of 1MRad(SiO2)

Simulation of total ionizing dose and random dopant fluctuations in sub-100 nm transistor nodes

Finite Elements Method simulations of Total Ionizing Dose in two state-of-the-art transistor nodes are presented: The 45 nm Partially-Depleted Silicon-on-Insulator MOSFET and the 22 nm bulk FinFET. A systematic method has been developed to study charge trapping in field isolation oxides using the simulation software Sentaurus device. The method is based on solving transport equations for carriers in the oxide. Aspects of simulation of interface trap formation through de-passivation from ionic hydrogen are discussed. This includes transport of hydrogen species in the device and state transitions. Calibration of the trapping model is performed using experimental results on Buried OXide irradiated capacitors of 400 nm SiO2. The extracted parameters are then used in the two FET technologies examined. In both cases, increased radiation hardness of the devices, tested using the bulk traps method, up to total doses of 600 KRad(SiO2) in the case of the PDSOI and 1 MRad(SiO2) in the case of the FinFET is shown. In the 45nm node, Random Dopant Fluctuations (RDFs) using the Sano and the Impedance Field Method are examined in combination with charge introduced in the field oxide regions. RDFs are shown to have a significant effect in the sub-threshold characteristics of the irradiated devices during the weak inversion of the parasitic transistor induced in the device. Their effect is negligible, however, when the parasitic channel is fully formed

22 nm bulk FinFET Total Ionizing Dose simulation

Dataset to support: Chatzikyriakou, E. et al (2016). Three-dimensional Finite Elements Method simulation of Total Ionizing Dose in 22 nm bulk nFinFETs. Nuclear Inst. and Methods in Physics Research B</span

Dataset: RDF and TID simulation of PDSOI 45nm MOSFET

Dataset supporting: Chatzikyriakou, Eleni, Redman-White, William and De Groot, Kees (2016) Total Ionizing Dose, Random Dopant Fluctuations and its combined effect in the 45 nm PDSOI node. Microelectronics Reliability.</span

Total Ionizing Dose TCAD simulation of 400 nm SiO2 capacitor

Synopsys Sentaurus TCAD simulation of 400 nm SiO2 capacitor under gamma irradiation. Dataset supports: Chatzikyriakou, Eleni et al (2017) A systematic method for simulating total ionizing dose effects using the finite elements method. Journal of Computational Electronics. Funded by EPSRC award 1304067. </span

Total Ionizing dose hardened and mitigation strategies in deep submicrometer CMOS and beyond

From man-made satellites and interplanetary missions to fusion power plants, electronic equipment that needs to withstand various forms of irradiation is an essential part of their operation. Examination of total ionizing dose (TID) effects in electronic equipment can provide a thorough means to predict their reliability in conditions where ionizing dose becomes a serious hazard. In this paper, we provide a historical overview of logic and memory technologies that made the biggest impact both in terms of their competitive characteristics and their intrinsically hardened nature against TID. Further to this, we also provide guidelines for hardened device designs and present the cases where hardened alternatives have been implemented and tested in the lab. The technologies that we examine range from silicon-on-insulator and FinFET to 2-D semiconductor transistors and resistive random access memory

Total Ionizing Dose, Random Dopant Fluctuations and its combined effect in the 45 nm PDSOI node

Total Ionizing Dose and Random Dopant Fluctuation simulations in 45 nm Partially Depleted Silicon-on-Insulator nMOSFETs are presented. Calibration is done according to the commercial IBM 45 nm technology node. The importance of the bottom corner parasitic transistor to the Total Ionizing Dose response is shown with the use of ultra shallow junctions. Simulation of irradiation in two-dimensional slices of the device reveal that the majority of the charge is trapped around the silicon film and at the bottom of the Buried OXide in the case of a positive gate bias. Random Dopant Fluctuations are examined using the Sano and the Impedance Field Method. The simulation results of the two methods are in good agreement. Dopant fluctuations do not produce significant response variation pre-irradiation, but they affect post-irradiation results introducing statistical deviations and aggravating Total Ionizing Dose effects. This effect is more pronounced during weak inversion of the parasitic transistor