Production data on 0.55 eV InGaAs thermophotovoltaic cells

Low bandgap 0.55 eV (2.25 {micro}m cutoff wavelength) indium gallium arsenide (In{sub 0.72}Ga{sub 0.28}As) thermophotovoltaic (TPV) cells use much more of the long wavelength energy emitted from low temperature (< 1,200 C) thermal sources than either Si or GaSb cells. Data are presented on a statistically significant number (2,500) of these TPV cells, indicating the performance obtainable in large numbers of cells. This data should be useful in the design and modeling of TPV system performance. At 1.2 A/cm{sup 2} short-circuit current, an average open-circuit voltage of 283 mV is obtained with a 60% fill factor. The peak external quantum efficiency for uncoated cells is 65% and is over 50% from 1.1 to 2.2 {micro}m. Internal quantum efficiency is over 76% in this range assuming an estimated 34% reflectance loss

Hydroxyurea and sickle cell anemia: effect on quality of life

BACKGROUND: The Multicenter Study of Hydroxyurea (HU) in Sickle Cell Anemia (MSH) previously showed that daily oral HU reduces painful sickle cell (SS) crises by 50% in patients with moderate to severe disease. The morbidity associated with this disease is known to have serious negative impact on the overall quality of life(QOL) of affected individuals. METHODS: The data in this report were collected from the 299 patients enrolled in the MSH. Health quality of llife (HQOL) measures were assessed in the MSH as a secondary endpoint to determine if the clinical benefit of HU could translate into a measurable benefit perceptible to the patients. HQOL was assessed with the Profile of Mood States, the Health Status Short Form 36 (SF-36), including 4-week pain recall, and the Ladder of Life, self-administered twice 2-weeks apart pre-treatment and every 6 months during the two-year, randomized, double-blind, treatment phase. The effects of factors including randomized treatment, age, gender, pre-treatment crises frequency, Hb-F level mean, daily pain from 4-week pre-treatment diaries, and 2-year Hb-F response level (low or high) were investigated. RESULTS: Over two years of treatment, the benefit of HU treatment on QOL, other than pain scales, was limited to those patients taking HU who maintained a high HbF response, compared to those with low HbF response or on placebo. These restricted benefits occurred in social function, pain recall and general health perception. Stratification according to average daily pain prior to treatment showed that responders to HU whose average daily pain score was 5–9 (substantial pain) achieved significant reduction in the tension scale compared to the placebo group and to non-responders. HU had no apparent effect on other QOL measures. CONCLUSION: Treatment of SS with HU improves some aspects of QOL in adult patients who already suffer from moderate-to-severe SS

MBE growth of GaInAsSb p/n junction diodes for thermophotovoltaic applications

This paper reports recent progress in the development of quaternary III-V thermophotovoltaic (TPV) devices based on MBE grown Ga{sub x}In{sub 1{minus}x}As{sub y}Sb{sub 1{minus}y}. TPV is of great interest for a variety of applications. The objective of this work is to develop a TPV cell which is tunable to the emission spectrum of a heated blackbody, at temperatures in the range of 1200--1473 K. One aspect of this tuning is to match the band gap, E{sub gap}, of the photovoltaic device to the peak output of the heat source., An advantage of the quarternary III-V semiconductor systems is that devices can be fabricated by molecular beam epitaxy on a suitable binary substrate, such as GaSb or InAs, and the band gap and lattice constant can be adjusted more or less independently, to match requirements. Quarternary cells, with band-gaps in the 0.5 to 0.72 eV range, have been fabricated and tested. For 0.54 eV devices the authors obtained V{sub oc} = 0.3 V and I{sub sc} = 1.5 amperes/cm{sup 2} under infrared illumination of a 1200 K blackbody. Under high illumination levels the V{sub oc} and I{sub sc} ranged from 0.5 V at 3 amperes/cm{sup 2} for 0.72 eV devices to 0.31 V at 1.2 amperes/cm{sup 2} for 0.5 eV devices, indicating good photovoltaic device characteristics over the range of bandgaps. The diode ideality factor for 0.54 eV devices ranged from 2.45 at low illumination indicating tunneling-dominated dark current, to 1.7 at high illumination intensity indicating recombination-generation dominated dark currents

Limiting phase separation in epitaxial GaInAsSb

GaInAsSb alloys are of great interest for lattice-matched thermophotovoltaic (TPV) devices because of the high performance attainable at 2.2 {micro}m. Extension of the TPV device cutoff wavelength to beyond 2.2 {micro}m is especially desirable since the emissive power of the source is significant at these longer wavelengths. However, the GaInAsSb quaternary alloy system exhibits a miscibility gap in the wavelength range of interest, and no devices with cutoff wavelengths longer than 2.3 {micro}m have been demonstrated. This paper reports the successful growth of GaInAsSb alloys which exhibit room temperature photoluminescence (PL) at wavelengths as long as 2.5 {micro}m. TPV devices with cutoff wavelengths out to 2.5 {micro}m exhibit external quantum efficiencies of 57%. These values are comparable to those measured for 2.2 {micro}m devices

5-Azacytidine Acts Directly on Both Erythroid Precursors and Progenitors to Increase Production of Fetal Hemoglobin

Abstract The effect of 5-azacytidine on erythroid precursors and progenitors was studied in nine patients with sickle cell anemia or severe thalassemia. Each patient received the drug intravenously for 5 or 7 d. 5-Azacytidine caused a four-to sixfold increase in y-messenger RNA concentration in bone marrow cells of eight of the nine patients and decreased the methylation frequency of a specific cytosine residue in th

An Application of Using Support Vector Machine Based on Classification Technique for Predicting Medical Data Sets

© 2019, Springer Nature Switzerland AG. This paper illustrates the utilise of various kind of machine learning approaches based on support vector machines for classifying Sickle Cell Disease data set. It has demonstrated that support vector machines generate an essential enhancement when applied for the pre-processing of clinical time-series data set. In this aspect, the objective of this study is to present discoveries for a number of classes of approaches for therapeutically associated problems in the purpose of acquiring high accuracy and performance. The primary case in this study includes classifying the dosage necessary for each patient individually. We applied a number of support vector machines to examine sickle cell data set based on the performance evaluation metrics. The result collected from a number of models have indicated that, support vector Classifier demonstrated inferior outcomes in comparison to Radial Basis Support Vector Classifier. For our Sickle cell data sets, it was found that the Parzen Kernel Support Vector Classifier produced the highest levels of performance and accuracy during training procedure accuracy 0.89733, AUC 0.94267. Where the testing set process, accuracy 0.81778, the area under the curve with 0.86556

Current status of low-temperature radiator thermophotovoltaic devices

The current performance status of low-temperature radiator (< 1,000 C) thermophotovoltaic (TPV) devices is presented. For low-temperature radiators, both power density and efficiency are equally important in designing an effective TPV system. Comparisons of 1 cm x 1 cm, 0.55 eV InGaAs and InGaAsSb voltaic devices are presented. Currently, InGaAs lattice-mismatched devices offer superior performance in comparison to InGaAsSb lattice-matched devices, due to the former`s long-term development for numerous optoelectronic applications. However, lattice-matched antimony-based quaternaries offer numerous potential advantages

Measurements of Conversion Efficiency for a Flat Plate Thermophotovoltaic System Using a Photonic Cavity Test System

The performance of a 1 cm{sup 2} thermophotovoltaic (TPV) module was recently measured in a photonic cavity test system. A conversion efficiency of 11.7% was measured at a radiator temperature of 1076 C and a module temperature of 29.9 C. This experiment achieved the highest direct measurement of efficiency for an integrated TPV system. Efficiency was calculated from the ratio of the peak (load matched) electrical power output and the heat absorption rate. Measurements of these two parameters were made simultaneously to assure the validity of the measured efficiency value. This test was conducted in a photonic cavity which mimicked a typical flat-plate TPV system. The radiator was a large, flat graphite surface. The module was affixed to the top of a copper pedestal for heat absorption measurements. The heat absorption rate was proportional to the axial temperature gradient in the pedestal under steady-state conditions. The test was run in a vacuum to eliminate conductive and convective heat transfer mechanisms. The photonic cavity provides the optimal test environment for TPV efficiency measurements because it incorporates all important physical phenomena found in an integrated TPV system: high radiator emissivity and blackbody spectral shape, photon recycling, Lambertian distribution of incident radiation and complex geometric effects. Furthermore, the large aspect ratio between radiating surface area and radiator/module spacing produces a view factor approaching unity with minimal photon leakage