Fuzzy Multiple Criteria Decision Making Approach to Assess the Project Quality Management in Project

AbstractProject quality management is all of the processes and activities needed to determine and achieve project quality. It includes the processes required to ensure that the project will satisfy the needs for which it was undertaken. Based on the identified evaluation criteria, a hierarchical structure of three dimensions and fifteen criteria is constructed, and a systematic approach with fuzzy ANP (FANP) was employed to assess the relative importance rates and rankings of these criteria. Discussions for the results are made and a brief conclusion is proposed. Therefore, the purpose of this paper is to evaluation project quality management in project. The results found that there were interactive relations between all the criteria, where the dimension of “Quality planning” was the most influential dimensions; Furthermore, criteria “Project management plan”, “Project Scope”, and “Quality management plan” have the higher influences among each dimension, so we suggest to consider them as the major steps to promote the quality of project management

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

Using current-sweep measurements, the set process in SiOx-based resistive random access memory (RRAM) has been found to consist of multiple resistance-reduction steps. Variation in set behaviors was observed and attributed to different defect distributions in the resistance switching region. Physical mechanism of electroforming process is discussed, which further explains the observed variation of defect distributions. A compliance current study confirms that the achievable memory states of SiOx RRAM are determined by its set behavior. This finding provides additional insight on achieving multi-bit memory storage with SiOx RRAM. (C) 2015 AIP Publishing LLC.Microelectronics Research Cente

2-Amino-1H-benzoimidazol-3-ium 4,4,4-trifluoro-1,3-dioxo-1-phenyl­butan-2-ide

In the title compound, C7H8N3 +·C10H6F3O2 −, 1H-benzoimidazol-2-amine system adopts a planar conformation with an r.m.s. deviation of 0.0174 Å. The cation and anion in the asymmetric unit are linked by N—H⋯O hydrogen bonds. There are also additional inter­molecular N—H⋯O hydrogen bonds and π–π stacking inter­actions between the phenyl rings of neighbouring anions with centroid–centroid distances of 4.0976 (13) Å

Discussion On Device Structures And Hermetic Encapsulation For SiOx Random Access Memory Operation In Air

An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices with an exposed SiOx edge. Electrical test of encapsulated, edge-free devices in 1 atmosphere air indicates stable switching characteristics, unlike devices with an edge. This work demonstrates that SiOx RRAM is able to operate in air with proper encapsulation and an edge-free structure. The resistive switching failure mechanism when operating in air is explained by the oxidation of hydrogen-complexed defects in the switching filament. (C) 2014 AIP Publishing LLC.National Science Foundation IIP-1127537Microelectronics Research Cente