Psychological impact of Covid-19 pandemic on dentists

Background: The Covid-19 pandemic seems to have an incessant out-turn on the people in every field in some or the other way. It has been reported that maximum number of deaths in the countries during this pandemic are caused due to a term called death anxiety or phobia. There are certain parameters such as anxiety, apprehension, depression which if influence a person can alter one’s well-being. Objective: The steadfast intent of this review article is to narrate the psychological impact of this pandemic on dentists. The eloquence and emergence of this topic will alarm all the medicos and paramedics to have a check on this scenario. Methods: The article consists of detailed study from several articles from PubMed publications. Articles written only in English language were referred. Various keywords such as “Covid-19 pandemic” or “Psychological Impact” were used. Results: The Covid-19 Pandemic has adversely affected all of us physically as well as psychologically. This article signifies the psychological impact of this pandemic on dentists. Conclusion: The current studies that are carried out till date show an extensive impact on the psychology of the dental professionals. The following review article elaborates the importance of the same

An electron paramagnetic resonance study of the electron transport in heavily Si-doped high Al content AlxGa1−xN

High Al mole fraction AlGaN is an ultrawide bandgap semiconductor with potential applications in power electronics and deep UV detectors. Although n-type material is achievable with Si-doping, the role of Si is controversial, particularly for AlxGa1−xN with x > 0.8. For this paper, AlGaN films were grown by plasma-assisted molecular beam epitaxy onto bulk AlN substrates and doped with 1018–1020 cm−3 Si. We examine electron transport in heavily Si-doped AlxGa1−xN with x ≥ 0.65 using magnetic resonance, which allows us to probe the neutral donors directly rather than the free carriers and avoids complications due to electrical contacts. Transport was studied through the temperature-dependent linewidth of the electron paramagnetic resonance (EPR) signature for the neutral donor. Analysis shows evidence of hopping conductivity in the most lightly doped samples and impurity band formation in the most heavily doped ones. The EPR results, which are consistent with Hall measurements performed on the same samples, are promising for the development of highly conducting high Al content AlGaN

Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit

Producción CientíficaThe relentless scaling of semiconductor devices pushes the doping level far above the equilibrium solubility, yet the doped material must be sufficiently stable for subsequent device fabrication and operation. For example, in epitaxial silicon doped above the solubility of phosphorus, most phosphorus dopants are compensated by vacancies, and some of the phosphorus-vacancy clusters can become mobile around 700 °C to further cluster with isolated phosphorus ions. For efficient and stable doping, we use microwave annealing to selectively activate metastable phosphorus-vacancy clusters by interacting with their dipole moments, while keeping lattice heating below 700 °C. In a 30-nm-thick Si nanosheet doped with 3 × 1021 cm−3 phosphorus, a microwave power of 12 kW at 2.45 GHz for 6 min resulted in a free-electron concentration of 4 × 1020 cm−3 and a junction more abrupt than 4 decades/nm. The doping profile is stable with less than 4% variation upon thermal annealing around 700 °C for 5 min. Thus, microwave annealing can result in not only efficient activation and abrupt profile in epitaxial silicon but also thermal stability. In comparison, conventional rapid thermal annealing can generate a junction as abrupt as microwave annealing but 25% higher sheet resistance and six times higher instability at 700 °C.Supplemental material: Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limitMinistry of Science and Technology of Taiwan (Contract MOST 109-2628-M-008-004-MY3