2 research outputs found
Cd-vacancy and Cd-interstitial complexes in Si and Ge
The electrical field gradient (EFG), measured e.g. in perturbed angular
correlation (PAC) experiments, gives particularly useful information about the
interaction of probe atoms like 111In / 111Cd with other defects. The
interpretation of the EFG is, however, a difficult task. This paper aims at
understanding the interaction of Cd impurities with vacancies and interstitials
in Si and Ge, which represents a controversial issue. We apply two
complementary ab initio methods in the framework of density functional theory
(DFT), (i) the all electron Korringa-Kohn-Rostoker (KKR) Greenfunction method
and (ii) the Pseudopotential-Plane-Wave (PPW) method, to search for the correct
local geometry. Surprisingly we find that both in Si and Ge the substitutional
Cd-vacancy complex is unstable and relaxes to a split-vacancy complex with the
Cd on the bond-center site. This complex has a very small EFG, allowing a
unique assignment of the small measured EFGs of 54MHz in Ge and 28MHz in Si.
Also, for the Cd-selfinterstitial complex we obtain a highly symmetrical split
configuration with large EFGs, being in reasonable agreement with experiments