An Evaluation of Parent Preference for Prompting Procedures

Parent participation in intervention can enhance intervention efficacy and promote generalization of skills across settings. Thus, parents should be trained to implement behavioral interventions. The purpose of the current investigation was to evaluate parent preference for and acceptability of 3 commonly used prompting procedures. We trained parents of children with disabilities to use 3 empirically validated prompting strategies (i.e., least‐to‐most, most‐to‐least, and a progressive‐prompt delay). Once the parent reached the mastery criteria with each prompting procedure, we evaluated his/her preference for each of the procedures using a concurrent‐chains arrangement. We also measured treatment acceptability of all procedures throughout the study. All participants met the mastery criteria for each of the prompting procedures and showed a preference for least‐to‐most prompting. Results suggest parents\u27 acceptability of procedures prior to training were different than posttraining/post‐child practice. In addition, acceptability rating scores obtained at the end of the investigation corresponded to preference of intervention during the concurrent‐chains arrangement. The results demonstrate the benefits of objective measures for studying preference for behavioral, skill‐acquisition procedures

Evaluation of performance capabilities of emitters and detectors based on a common MQW structure

Photodetectors (PDs) based on three separate confinement-multiple quantum well (SCH-MQW) structures (with 2,4 and 8 QWs) and six graded-index (GRIN) SCH-MQW structures were studied for two types of devices: guided wave and non-guided wave devices. Non-guided wave devices were processed and the capacitance and the responsivity, in the wavelength range of 750-900 nm, were determined for various bias voltages. Guided wave PDs were simulated using the transfer matrix method for optical mode calculation and the minimum length of the detectors was calculated for absorbing 99% of the incident light. The junction capacitance of the guided wave PDs was calculated from the measured capacitance of non-guided wave devices and the minimum size of the devices; values of 215,101, and 52 fF were obtained for 2,4 and 8 QW SCH-MQW structures. Laser diodes were also fabricated from the three different SCH-MQW structures. Threshold current densities (Jth) of 737,755 and 1210 A cm-2 were measured for 2,4 and 8 QWs, respectively. Further improvement was achieved using GRINSCH-MQW structures and LDs with 4 QWs exhibited 33% decrease in Jth and 22% increase in slope efficiency. © 2001 Elsevier Science B.V

Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy

Single-crystal hexagonal and cubic GaN thin films have been grown by radio-frequency nitrogen plasma source molecular beam epitaxy directly on vicinal (001) GaAs substrates, misoriented by 2 degrees toward [100], without using an incident As beam during oxide desorption or the following stages of growth. Both the GaAs nitridation and GaN growth conditions were found to control the structure of the layers. Cubic layers could be grown only without nitridation and under stoichiometric N/Ga flux ratio conditions. N-rich conditions favored the growth of hexagonal layers, which exhibited significantly higher photoluminescence intensities compared to cubic ones. Hexagonal single crystalline GaN films were grown with (10(1) over bar 2) planes and presented characteristic surface roughness striations along a [110] substrate direction. On the contrary, a stepped surface morphology was observed for cubic GaN. (C) 2000 American Institute of Physics. [S0003-6951(00)04818-X]

Evaluation of performance capabilities of emitters and detectors based on a common MQW structure

Photodetectors (PDs) based on three separate confinement-multiple quantum well (SCH-MQW) structures (with 2,4 and 8 QWs) and six graded-index (GRIN) SCH-MQW structures were studied for two types of devices: guided wave and non-guided wave devices. Non-guided wave devices were processed and the capacitance and the responsivity, in the wavelength range of 750-900 nm, were determined for various bias voltages. Guided wave PDs were simulated using the transfer matrix method for optical mode calculation and the minimum length of the detectors was calculated for absorbing 99% of the incident light. The junction capacitance of the guided wave PDs was calculated from the measured capacitance of non-guided wave devices and the minimum size of the devices; values of 215,101, and 52 fF were obtained for 2,4 and 8 QW SCH-MQW structures. Laser diodes were also fabricated from the three different SCH-MQW structures. Threshold current densities (Jth) of 737,755 and 1210 A cm-2 were measured for 2,4 and 8 QWs, respectively. Further improvement was achieved using GRINSCH-MQW structures and LDs with 4 QWs exhibited 33% decrease in Jth and 22% increase in slope efficiency. © 2001 Elsevier Science B.V

Revisiting the Staphylococcus aureus SarA regulon by high-throughput screening

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