Degenerate optical parametric amplification in CMOS silicon

Silicon is a common material for photonics due to its favorable optical properties in the telecom and mid-wave IR bands, as well as compatibility with a wide range of complementary metal-oxide semiconductor (CMOS) foundry processes. Crystalline inversion symmetry precludes silicon from natively exhibiting second-order nonlinear optical processes. In this work, we build on recent work in silicon photonics that break this material symmetry using large bias fields, thereby enabling $\chi^{(2)}$ interactions. Using this approach, we demonstrate both second-harmonic generation (with a normalized efficiency of $0.2\,\%\,\mathrm{W^{-1} cm^{-2}}$) and, to our knowledge, the first degenerate $\chi^{(2)}$ optical parametric amplifier (with relative gain of $0.02\,\mathrm{dB}$ using $3\,\mathrm{mW}$ of pump power on-chip at a pump wavelength of $1196\,\mathrm{nm}$) using silicon-on-insulator waveguides fabricated in a CMOS-compatible commercial foundry. We expect this technology to enable the integration of novel nonlinear optical devices such as optical parametric amplifiers, oscillators, and frequency converters into large-scale, hybrid photonic-electronic systems by leveraging the extensive ecosystem of CMOS fabrication.Comment: The first three authors contributed equally to this work; 9 pages, 5 figure

On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands

Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wavelength infrared region caused by the creation of an impurity band within the silicon band gap. In this work, we present the first experimental demonstration of lateral Te-hyperdoped Si PIN photodetectors operating at room temperature in the optical telecom bands. We provide a detailed description of the fabrication process, working principle, and performance of the photodiodes, including their key figure of merits. Our results are promising for the integration of active and passive photonic elements on a single Si chip, leveraging the advantages of planar CMOS technology.Comment: 18 pages, 5 Figures, Supplementary informatio