15 research outputs found
A new approach for in-situ TEM straining investigations of nanocrystalline Pd and PdAu using orientation mapping
Grain Refinement, Stacking Faults and Mechanical Properties of Nanocrystalline Pd and Pd Alloys
Deformation-induced grain growth and twinning in nanocrystalline palladium thin films
The microstructure and mechanical properties of nanocrystalline Pd films prepared by magnetron sputtering have been investigated as a function of strain. The films were deposited onto polyimide substrates and tested in tensile mode. In order to follow the deformation processes in the material, several samples were strained to defined straining states, up to a maximum engineering strain of 10%, and prepared for post-mortem analysis. The nanocrystalline structure was investigated by quantitative automated crystal orientation mapping (ACOM) in a transmission electron microscope (TEM), identifying grain growth and twinning/detwinning resulting from dislocation activity as two of the mechanisms contributing to the macroscopic deformation. Depending on the initial twin density, the samples behaved differently. For low initial twin densities, an increasing twin density was found during straining. On the other hand, starting from a higher twin density, the twins were depleted with increasing strain. The findings from ACOM-TEM were confirmed by results from molecular dynamics (MD) simulations and from conventional and in-situ synchrotron X-ray diffraction (CXRD, SXRD) experiments
Estimating uncertainties for the driving torque in continuous flight Augur machine during space sampling drilling operation
Half-metallic {Co2MnSi/Co2FeSi} multilayered Heusler electrodes in magnetic tunnel junctions
Castrup A, Dasgupta S, Scherer T, et al. Half-metallic {Co2MnSi/Co2FeSi} multilayered Heusler electrodes in magnetic tunnel junctions. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS. 2007;310(2):2009-2011.It is demonstrated that the atomic ordering of Co2FeSi can significantly be improved in terms of magnetization and tunnel magnetoresistance using multilayered {Co(2)MnSi(5)nm/Co(2)FeSi(5)nm}(10) full-Heusler magnetic electrodes in magnetic tunnel junctions. (c) 2006 Elsevier B.V. All rights reserved