Design guide for high pressure oxygen systems

A repository for critical and important detailed design data and information, hitherto unpublished, along with significant data on oxygen reactivity phenomena with metallic and nonmetallic materials in moderate to very high pressure environments is documented. This data and information provide a ready and easy to use reference for the guidance of designers of propulsion, power, and life support systems for use in space flight. The document is also applicable to designs for industrial and civilian uses of high pressure oxygen systems. The information presented herein are derived from data and design practices involving oxygen usage at pressures ranging from about 20 psia to 8000 psia equal with thermal conditions ranging from room temperatures up to 500 F

CFD Models of a Serpentine Inlet, Fan, and Nozzle

Several computational fluid dynamics (CFD) codes were used to analyze the Versatile Integrated Inlet Propulsion Aerodynamics Rig (VIIPAR) located at NASA Glenn Research Center. The rig consists of a serpentine inlet, a rake assembly, inlet guide vanes, a 12-in. diameter tip-turbine driven fan stage, exit rakes or probes, and an exhaust nozzle with a translating centerbody. The analyses were done to develop computational capabilities for modeling inlet/fan interaction and to help interpret experimental data. Three-dimensional Reynolds averaged Navier-Stokes (RANS) calculations of the fan stage were used to predict the operating line of the stage, the effects of leakage from the turbine stream, and the effects of inlet guide vane (IGV) setting angle. Coupled axisymmetric calculations of a bellmouth, fan, and nozzle were used to develop techniques for coupling codes together and to investigate possible effects of the nozzle on the fan. RANS calculations of the serpentine inlet were coupled to Euler calculations of the fan to investigate the complete inlet/fan system. Computed wall static pressures along the inlet centerline agreed reasonably well with experimental data but computed total pressures at the aerodynamic interface plane (AIP) showed significant differences from the data. Inlet distortion was shown to reduce the fan corrected flow and pressure ratio, and was not completely eliminated by passage through the fa

Localization length and impurity dielectric susceptibility in the critical regime of the metal-insulator transition in homogeneously doped p-type Ge

We have determined the localization length \xi and the impurity dielectric susceptibility \chi_{\rm imp} as a function of Ga acceptor concentrations (N) in nominally uncompensated ^{70}Ge:Ga just below the critical concentration (N_c) for the metal-insulator transition. Both \xi and \chi_{\rm imp} diverge at N_c according to the functions \xi\propto(1-N/N_c)^{-\nu} and \chi_{\rm imp}\propto(N_c/N-1)^{-\zeta}, respectively, with \nu=1.2\pm0.3 and \zeta=2.3\pm0.6 for 0.99N_c< N< N_c. Outside of this region (N<0.99N_c), the values of the exponents drop to \nu=0.33\pm0.03 and \zeta=0.62\pm0.05. The effect of the small amount of compensating dopants that are present in our nominally uncompensated samples, may be responsible for the change of the critical exponents at N\approx0.99N_c.Comment: RevTeX, 4 pages with 5 embedded figures, final version (minor changes

First-principles calculations of the self-trapped exciton in crystalline NaCl

The atomic and electronic structure of the lowest triplet state of the off-center (C2v symmetry) self-trapped exciton (STE) in crystalline NaCl is calculated using the local-spin-density (LSDA) approximation. In addition, the Franck-Condon broadening of the luminescence peak and the a1g -> b3u absorption peak are calculated and compared to experiment. LSDA accurately predicts transition energies if the initial and final states are both localized or delocalized, but 1 eV discrepancies with experiment occur if one state is localized and the other is delocalized.Comment: 4 pages with 4 embeddded figure

Electrical properties of isotopically enriched neutron-transmutation-doped ^{70} Ge:Ga near the metal-insulator transition

We report the low temperature carrier transport properties of a series of nominally uncompensated neutron-transmutation doped (NTD) ^{70} Ge:Ga samples very close to the critical concentration N_c for the metal-insulator transition. The concentration of the sample closest to N_c is 1.0004N_c and it is unambiguously shown that the critical conductivity exponent is 0.5. Properties of insulating samples are discussed in the context of Efros and Shklovskii's variable range hopping conduction.Comment: 8 pages using REVTeX, 8 figures, published versio

X-Band ESR Determination of Dzyaloshinsky-Moriya Interaction in 2D SrCu2_2(BO3_3)2_2 System

X-band ESR measurements on a single crystal of SrCu$_2$(BO$_3$)$_2$ system in a temperature range between 10 K and 580 K are presented. The temperature and angular dependence of unusually broad ESR spectra can be explained by the inclusion of antisymmetric Dzyaloshinsky-Moriya (DM) interaction, which yields by far the largest contribution to the linewidth. However, the well-accepted picture of only out-of-plane interdimer DM vectors is not sufficient for explanation of the observed angular dependence. In order to account for the experimental linewidth anisotropy we had to include sizable in-plane components of interdimer as well as intradimer DM interaction in addition to the out-of-plane interdimer one. The nearest-neighbor DM vectors lie perpendicular to crystal anisotropy c-axis due to crystal symmetry. We also emphasize that above the structural phase transition occurring at 395 K dynamical mechanism should be present allowing for instantaneous DM interactions. Moreover, the linewidth at an arbitrary temperature can be divided into two contributions; namely, the first part arising from spin dynamics governed by the spin Hamiltonian of the system and the second part due to significant spin-phonon coupling. The nature of the latter mechanism is attributed to phonon-modulation of the antisymmetric interaction, which is responsible for the observed linear increase of the linewidth at high temperatures.Comment: 17 pages, 4 figures, submitted to PR

Materials with Colossal Dielectric Constant: Do They Exist?

Experimental evidence is provided that colossal dielectric constants, epsilon >= 1000, sometimes reported to exist in a broad temperature range, can often be explained by Maxwell-Wagner type contributions of depletion layers at the interface between sample and contacts, or at grain boundaries. We demonstrate this on a variety of different materials. We speculate that the largest intrinsic dielectric constant observed so far in non-ferroelectric materials is of order 100.Comment: 3 figure

Modelling charge self-trapping in wide-gap dielectrics: Localization problem in local density functionals

We discuss the adiabatic self-trapping of small polarons within the density functional theory (DFT). In particular, we carried out plane-wave pseudo-potential calculations of the triplet exciton in NaCl and found no energy minimum corresponding to the self-trapped exciton (STE) contrary to the experimental evidence and previous calculations. To explore the origin of this problem we modelled the self-trapped hole in NaCl using hybrid density functionals and an embedded cluster method. Calculations show that the stability of the self-trapped state of the hole drastically depends on the amount of the exact exchange in the density functional: at less than 30% of the Hartree-Fock exchange, only delocalized hole is stable, at 50% - both delocalized and self-trapped states are stable, while further increase of exact exchange results in only the self-trapped state being stable. We argue that the main contributions to the self-trapping energy such as the kinetic energy of the localizing charge, the chemical bond formation of the di-halogen quasi molecule, and the lattice polarization, are represented incorrectly within the Kohn-Sham (KS) based approaches.Comment: 6 figures, 1 tabl

Dopant-induced crossover from 1D to 3D charge transport in conjugated polymers

The interplay between inter- and intra-chain charge transport in bulk polythiophene in the hopping regime has been clarified by studying the conductivity as a function of frequency (up to 3 THz), temperature and doping level. We present a model which quantitatively explains the observed crossover from quasi-one-dimensional transport to three-dimensional hopping conduction with increasing doping level. At high frequencies the conductivity is dominated by charge transport on one-dimensional conducting chains.Comment: 4 pages, 2 figure

Crystal Field and Dzyaloshinsky-Moriya Interaction in orbitally ordered La_{0.95}Sr_{0.05}MnO_3: An ESR Study

We present a comprehensive analysis of Dzyaloshinsky-Moriya interaction and crystal-field parameters using the angular dependence of the paramagnetic resonance shift and linewidth in single crystals of La_{0.95}Sr_{0.05}MnO_3 within the orthorhombic Jahn-Teller distorted phase. The Dzyaloshinsky-Moriya interaction (~ 1K) results from the tilting of the MnO_6 octahedra against each other. The crystal-field parameters D and E are found to be of comparable magnitude (~ 1K) with D ~= -E. This indicates a strong mixing of the |3z^2-r^2> and |x^2-y^2> states for the real orbital configuration.Comment: 12 pages, 6 figure