Radiation Tolerance of Low-Cost Magnetometer for Space Applications

Knowing the three-dimensional magnetic field configuration and dynamics in space environments is key to understand the physical processes taking place. Plasma dynamics depend on the local orientation of the magnetic field, and key quantities such as pitch angle and dynamical processes such as waves and reconnection cannot be studied without in-situ measurements of the fields. For this reason, magnetometers are one of the most important instruments for space physics-focused missions. This is true both for spacecraft and also for landed missions, particularly on atmosphere-less bodies, where the space environment interacts directly with the surface. To enable the next generation of small spacecraft and landers, sensors need to be low-cost and withstand the harsh radiation environment present in space. Here we present the latest advances in the characterization of a commercial-off-the-shelf three-dimensional magnetometer,summarizing previous and newresults from radiation tests. The sensor shows tolerance up to a total ionization dose (TID) of 300 krad, levels well beyond those typical for a low-Earth orbit mission, and compliant with those expected during a landed mission on the Jovian moon Europa

Hardness Assurance for Total Dose and Dose Rate Testing of a State-of-the-Art Off-Shore 32 nm SOI CMOS Processor

No abstract availabl

Ultra-Scaled CMOS Radiation Performance

No abstract availabl

A Comparison of High-Energy Electron and Cobalt-60 Gamma-Ray Radiation Testing

In this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistor

Recent Total Ionizing Dose and Displacement Damage Compendium of Candidate Electronics for NASA Space Systems

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices

Current Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA

We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results

Recent Results on SEU Hardening of SiGe HBT Logic Circuits

A viewgraph presentation on SEU tolerant SiGe HBT technology is shown. The topics include: 1) Introduction; 2) TID and SEU in SiGe Technology; 3) RHBD Techniques; 4) Experiment; 5) Heavy-Ion Data and Analysis; and 6) Summary

Compendium of Single Event Effects Results for Candidate Spacecraft Electronics for NASA

Susceptibility of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects is studied. Devices tested include digital, linear bipolar, and hybrid devices

A NASA Perspective and Validation and Testing of Design Hardening for the Natural Space Radiation Environment (GOMAC Tech 03)

With the dearth of dedicated radiation hardened foundries, new and novel techniques are being developed for hardening designs using non-dedicated foundry services. In this paper, we will discuss the implications of validating these methods for the natural space radiation environment issues: total ionizing dose (TID) and single event effects (SEE). Topics of discussion include: Types of tests that are required, Design coverage (i.e., design libraries: do they need validating for each application?) A new task within NASA to compare existing design. This latter task is a new effort in FY03 utilizing a 8051 microcontroller core from multiple design hardening developers as a test vehicle to evaluate each mitigative technique

Characteristics of Single-Event Upsets in a Fabric Switch (ADS151)

Abstract-Two types of single event effects - bit errors and single event functional interrupts - were observed during heavy-ion testing of the AD8151 crosspoint switch. Bit errors occurred in bursts with the average number of bits in a burst being dependent on both the ion LET and on the data rate. A pulsed laser was used to identify the locations on the chip where the bit errors and single event functional interrupts occurred. Bit errors originated in the switches, drivers, and output buffers. Single event functional interrupts occurred when the laser was focused on the second rank latch containing the data specifying the state of each switch in the 33x17 matrix