Inclusive University didactics and technological devices: a case study

This paper provides a review of projects related to new technologies used to favour the teaching-learning processes and the inclusive practices in the University context for students with disabilities and with Specific Learning Disorders. Authors present a review of strategies, trajectories and perspectives activated in the national and international scene, aiming to guarantee a significant pedagogical framework of reference. Furthermore, the paper focuses on a meaningful path activated at the University of Macerata, the project Inclusion 3.0, a relevant example of new technologies in support of teaching- learning processes and inclusion practices among all students

Effects of Uncertainty of Outlet Boundary Conditions in a Patient-Specific Case of Aortic Coarctation

Computational Fluid Dynamics (CFD) simulations of blood flow are widely used to compute a variety of hemodynamic indicators such as velocity, time-varying wall shear stress, pressure drop, and energy losses. One of the major advances of this approach is that it is non-invasive. The accuracy of the cardiovascular simulations depends directly on the level of certainty on input parameters due to the modelling assumptions or computational settings. Physiologically suitable boundary conditions at the inlet and outlet of the computational domain are needed to perform a patient-specific CFD analysis. These conditions are often affected by uncertainties, whose impact can be quantified through a stochastic approach. A methodology based on a full propagation of the uncertainty from clinical data to model results is proposed here. It was possible to estimate the confidence associated with model predictions, differently than by deterministic simulations. We evaluated the effect of using three-element Windkessel models as the outflow boundary conditions of a patient-specific aortic coarctation model. A parameter was introduced to calibrate the resistances of the Windkessel model at the outlets. The generalized Polynomial Chaos method was adopted to perform the stochastic analysis, starting from a few deterministic simulations. Our results show that the uncertainty of the input parameter gave a remarkable variability on the volume flow rate waveform at the systolic peak simulating the conditions before the treatment. The same uncertain parameter had a slighter effect on other quantities of interest, such as the pressure gradient. Furthermore, the results highlight that the fine-tuning of Windkessel resistances is not necessary to simulate the post-stenting scenario

Characterization of gaze in handwriting of High and Low Frequency Word of Schoolchildren with Dyslexia

Writing is extremely important for our academic and professional life and can affect our performance in productive educational activities, favouring us or not. Schoolchildren with dyslexia bring difficulties and reduced school performance due to their condition of deprivation in written production. This is because schoolchildren with dyslexia have difficulty acquiring spelling knowledge and show poor phonological skills. This study aimed to characterize the performance of schoolchildren with dyslexia in “gaze” for the handwriting of High and Low-frequency words. A total of 24 schoolchildren participated in the study. They were between 8 to 11 years and 11 months of age, of both sexes, and they were attending the 3rd to the 5th year of Elementary School in the city of Marília-SP. The schoolchildren were divided into groups: GI, composed of 12schoolchildren with an interdisciplinary diagnosis of developmental dyslexia, and GII, composed of 12 schoolchildren with good academic performance, paired with GI according to the school grade level. These schoolchildren were submitted to computerized handwriting evaluation using a Brazilian adaptation of the Software Ductus. All schoolchildren were submitted to a copy of words already selected according to Brazilian Portuguese criteria of frequency and codification rule. A measure of “gaze” was used, that is, when the schoolchildren stopped their handwriting to search/look up at the screen to confirm the information about the words. The results indicated a significant difference between GI and GII, with GI schoolchildren performing more gaze when compared with GII, i.e., taking longer motor breaks to perform the gaze. Therefore, there was a rupture in the central processing with the peripheral when the child performed the gauze more times since he had to confirm the characteristics of this word during the writing process (difficulty in accessing the orthographic lexicon) and with that, there was a break in the movement of handwriting (since there was not enough information in the central plane to complete that motor memory and finish the word). It was concluded that there were gaps between the central (orthographic) and peripheral (motor pauses processes, suggesting deficits in the formation of motor programs for GI and the lack of automation of motor processes

Speed and pressure of handwriting as critical issues of the contemporary age: A research in Italian students in early literacy

Among the present critical issues that pedagogy and special teaching have to deal with it is possible to notice the contrast between writing and technology, up to the pertinent field of prevention and observation of dysgraphies. The authors present in the following article a study conducted in Italy aimed at evaluating writing, specifically in the speed and pressure parameters in early literacy using NeuroScript Movalyzer Software. The aim is to implement suitable research paths to support the dissemination of observation procedures and inclusive teaching practices, capable of enhancing the fluidity of writing by all students

Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering

In this manuscript, we develop a generalized theory for the scattering process produced by interface roughness on charge carriers that is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape of Ge/Ge-Si heterointerfaces obtained by atom probe tomography, we are able to define the full set of interface parameters relevant to the scattering potential, including both the in-plane and axial correlation inside real diffuse interfaces. Our experimental findings indicate a partial coherence of the interface roughness along the growth direction within the interfaces. We show that it is necessary to include this feature, previously neglected by theoretical models, when heterointerfaces characterized by finite interface widths are taken into consideration. To show the relevance of our generalized scattering model in the physics of semiconductor devices, we implement it in a nonequilibrium Green's function simulation platform to assess the performance of a Ge/Si-Ge-based terahertz quantum cascade laser

Photoluminescence from ultrathin Ge-rich multi-quantum wells observed up to room-temperature: experiments and modeling

Employing a low-temperature growth-mode, we fabricated ultrathin Si1-xGex/Si multiple quantum well (QW) structures with a well thickness of less than 1.5 nm and a Ge concentration above 60 % directly on a Si substrate. We identified an unusual temperature-dependent blueshift of the photoluminescence (PL) and an exceptionally low thermal quenching. We find that this behavior is related to the relative intensities of the no-phonon (NP) peak and a phonon-assisted replica that are the main contributors to the total PL signal. In order to investigate these aspects in more detail, we developed a strategy to calculate the PL spectrum employing a self-consistent multi-valley effective mass model in combination with second-order perturbation theory. According to our investigation, we find that while the phonon-assisted feature decreases with temperature, the NP feature shows a strong increase in the recombination rate. Besides leading to the observed robustness against thermal quenching, this causes the observed blueshift of the total PL signal.T.W. and K.B. were supported by the Stiftung der Deutschen Wirtschaft (sdw) and by the Deutsche Forschungsgemeinschaft (DFG) through project B10 within the Collaborative Research Center (CRC) 951 Hybrid Inorganic/Organic Systems for Opto-Electronics. HRTEM measurements were financed by Xunta de Galica Grant No. GRC2014/008

Network Physiology reveals relations between network topology and physiological function

The human organism is an integrated network where complex physiologic systems, each with its own regulatory mechanisms, continuously interact, and where failure of one system can trigger a breakdown of the entire network. Identifying and quantifying dynamical networks of diverse systems with different types of interactions is a challenge. Here, we develop a framework to probe interactions among diverse systems, and we identify a physiologic network. We find that each physiologic state is characterized by a specific network structure, demonstrating a robust interplay between network topology and function. Across physiologic states the network undergoes topological transitions associated with fast reorganization of physiologic interactions on time scales of a few minutes, indicating high network flexibility in response to perturbations. The proposed system-wide integrative approach may facilitate the development of a new field, Network Physiology.Comment: 12 pages, 9 figure

Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content

We examine the Raman shift in silicon–germanium–tin alloys with high silicon content grown on a germanium virtual substrate by molecular beam epitaxy. The Raman shifts of the three most prominent modes, Si–Si, Si–Ge, and Ge–Ge, are measured and compared with results in previous literature. We analyze and fit the dependence of the three modes on the composition and strain of the semiconductor alloys. We also demonstrate the calculation of the composition and strain of SixGe1 − x − ySny from the Raman shifts alone, based on the fitted relationships. Our analysis extends previous results to samples lattice matched on Ge and with higher Si content than in prior comprehensive Raman analyses, thus making Raman measurements as a local, fast, and nondestructive characterization technique accessible for a wider compositional range of these ternary alloys for silicon-based photonic and microelectronic devices.Deutsche Forschungsgemeinschaft http://dx.doi.org/10.13039/501100001659Peer Reviewe

Thermoelectric power factor under strain-induced band-alignment in the half-Heuslers NbCoSn and TiCoSb

Band convergence is an effective strategy to improve the thermoelectric performance of complex bandstructure thermoelectric materials. Half-Heuslers are good candidates for band convergence studies because they have multiple bands near the valence bad edge that can be converged through various band engineering approaches providing power factor improvement opportunities. Theoretical calculations to identify the outcome of band convergence employ various approximations for the carrier scattering relaxation times (the most common being the constant relaxation time approximation) due to the high computational complexity involved in extracting them accurately. Here, we compare the outcome of strain-induced band convergence under two such scattering scenarios: i) the most commonly used constant relaxation time approximation and ii) energy dependent inter- and intra-valley scattering considerations for the half-Heuslers NbCoSn and TiCoSb. We show that the outcome of band convergence on the power factor depends on the carrier scattering assumptions, as well as the temperature. For both materials examined, band convergence improves the power factor. For NbCoSn, however, band convergence becomes more beneficial as temperature increases, under both scattering relaxation time assumptions. In the case of TiCoSb, on the other hand, constant relaxation time considerations also indicate that the relative power factor improvement increases with temperature, but under the energy dependent scattering time considerations, the relative improvement weakens with temperature. This indicates that the scattering details need to be accurately considered in band convergence studies to predict more accurate trends.Comment: 21 pages, 8 figures. arXiv admin note: text overlap with arXiv:1905.0795