Summary and Outlook of the International Workshop on Aging Phenomena in Gaseous Detectors (DESY, Hamburg, October, 2001)

High Energy Physics experiments are currently entering a new era which requires the operation of gaseous particle detectors at unprecedented high rates and integrated particle fluxes. Full functionality of such detectors over the lifetime of an experiment in a harsh radiation environment is of prime concern to the involved experimenters. New classes of gaseous detectors such as large-scale straw-type detectors, Micro-pattern Gas Detectors and related detector types with their own specific aging effects have evolved since the first workshop on wire chamber aging was held at LBL, Berkeley in 1986. In light of these developments and as detector aging is a notoriously complex field, the goal of the workshop was to provide a forum for interested experimentalists to review the progress in understanding of aging effects and to exchange recent experiences. A brief summary of the main results and experiences reported at the 2001 workshop is presented, with the goal of providing a systematic review of aging effects in state-of-the-art and future gaseous detectors.Comment: 14 pages, 2 pictures. Presented at the IEEE Nuclear Science Symposium and Medical Imaging Conference, November 4-10, 2001, San Diego, USA. Submitted to IEEE Trans. Nucl. Sci (IEEE-TNS

Radiation-hard active pixel sensors for HL-LHC detector upgrades based on HV-CMOS technology

Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown

A First Mass Production of Gas Electron Multipliers

We report on the manufacture of a first batch of approximately 2,000 Gas Electron Multipliers (GEMs) using 3M's fully automated roll to roll flexible circuit production line. This process allows low-cost, reproducible fabrication of a high volume of GEMs of dimensions up to 30$\times$30 cm$^{2}$. First tests indicate that the resulting GEMs have optimal properties as radiation detectors. Production techniques and preliminary measurements of GEM performance are described. This now demonstrated industrial capability should help further establish the prominence of micropattern gas detectors in accelerator based and non-accelerator particle physics, imaging and photodetection.Comment: 11 pages, 10 figures, to be submitted to Nucl. Instr. Meth.

Prospects and Results from the AFP Detector in ATLAS

In 2016 one arm of the AFP detector was installed and first data have been taken. In parallel with integration of the AFP subdetector into the ATLAS TDAQ and DCS systems, beam tests and preparations for the installation of the 2$^{\textrm{nd}}$ arm are performed. In this report, a status of the AFP project in the ATLAS experiment is discussed.Comment: 5 pages, 2 figures, Proceedings of the 8th International Workshop on Multiple Partonic Interactions at the LHC, Chiapas, Mexic

Radiation damage effects on detectors and eletronic devices in harsh radiation environment

Radiation damage effects represent one of the limits for technologies to be used in harsh radiation environments as space, radiotherapy treatment, high-energy phisics colliders. Different technologies have known tolerances to different radiation fields and should be taken into account to avoid unexpected failures which may lead to unrecoverable damages to scientific missions or patient health

Characterization of Thin Pixel Sensor Modules Interconnected with SLID Technology Irradiated to a Fluence of 2⋅1015\cdot 10^{15}\,neq_{\mathrm{eq}}/cm2^2

A new module concept for future ATLAS pixel detector upgrades is presented, where thin n-in-p silicon sensors are connected to the front-end chip exploiting the novel Solid Liquid Interdiffusion technique (SLID) and the signals are read out via Inter Chip Vias (ICV) etched through the front-end. This should serve as a proof of principle for future four-side buttable pixel assemblies for the ATLAS upgrades, without the cantilever presently needed in the chip for the wire bonding. The SLID interconnection, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It is characterized by a very thin eutectic Cu-Sn alloy and allows for stacking of different layers of chips on top of the first one, without destroying the pre-existing bonds. This paves the way for vertical integration technologies. Results of the characterization of the first pixel modules interconnected through SLID as well as of one sample irradiated to $2\cdot10^{15}$\,\neqcm{} are discussed. Additionally, the etching of ICV into the front-end wafers was started. ICVs will be used to route the signals vertically through the front-end chip, to newly created pads on the backside. In the EMFT approach the chip wafer is thinned to (50--60)\,$\mu$m.Comment: Proceedings to PSD

Innovating Advanced Radiation Instruments

STREAM is a 4-year multi-site training network that aims at career development of Early Stage Researchers (ESRs) on scientific design, construction manufacturing and of advanced radiation instrumentation. STREAM targets the development of innovative radiation-hard, smart CMOS sensor technologies for scientific and industrial applications. The platform technology developed within the project will be tested in the demanding conditions posed by the CERN LHC detectors' environment as well as European industry leaders in the field of CMOS imaging, electron microscopy and radiation sensors. This leveraging factor will allow to fine-tune the technology to meet the requirements of industrial application cases on demand such as electron microscopy and medical X-ray imaging, as well as pathway towards novel application fields such as satellite environments, industrial X-ray systems and near-infrared imaging. The project will train a new generation of creative, entrepreneurial and innovative early-stage researchers and widen their academic career and employment opportunities. The STREAM consortium is composed of 10 research organisations and 5 industrial partners; the network will provide training to 17 ESRs. STREAM structures the research and training in four scientific work-packages which span the whole value-chain from research to application: CMOS Technologies Assessment, Smart Sensor Design and Layout, Validation and Qualification, Technology Integration, and Valorization

Resistive MSGC with double layered electrodes

The first successful attempts to optimize the electric field in Resistive Microstrip Gas Chamber (RMSGC) using additional field shaping strips located inside the detector substrate are described.Comment: Presented at 13th RD51 Collaboration meeting, CERN, Febr. 201

HV/HR-CMOS sensors for the ATLAS upgrade—concepts and test chip results

In order to extend its discovery potential, the Large Hadron Collider (LHC) will have a major upgrade (Phase II Upgrade) scheduled for 2022. The LHC after the upgrade, called High-Luminosity LHC (HL-LHC), will operate at a nominal leveled instantaneous luminosity of 5× 1034 cm−2 s−1, more than twice the expected Phase I . The new Inner Tracker needs to cope with this extremely high luminosity. Therefore it requires higher granularity, reduced material budget and increased radiation hardness of all components. A new pixel detector based on High Voltage CMOS (HVCMOS) technology targeting the upgraded ATLAS pixel detector is under study. The main advantages of the HVCMOS technology are its potential for low material budget, use of possible cheaper interconnection technologies, reduced pixel size and lower cost with respect to traditional hybrid pixel detector. Several first prototypes were produced and characterized within ATLAS upgrade R&D effort, to explore the performance and radiation hardness of this technology. In this paper, an overview of the HVCMOS sensor concepts is given. Laboratory tests and irradiation tests of two technologies, HVCMOS AMS and HVCMOS GF, are also given