High Extinction Ratio Polarization Selective TE/TM Bragg Gratings Filters on Silicon-on-insulator

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High-extinction-ratio TE/TM selective Bragg grating filters on silicon-on-insulator

We report on the design and fabrication of TE and TM polarization selective Bragg grating filters in the form of sinusoidal perturbations on the waveguide sidewall and etched holes on the top of the waveguide, respectively. Combining the two geometries on a silicon-on-insulator waveguide resulted in Bragg grating filters with high extinction ratios of approximately 60 dB

High-extinction-ratio TE/TM selective Bragg grating filters on silicon-on-insulator

We report on the design and fabrication of TE and TM polarization selective Bragg grating filters in the form of sinusoidal perturbations on the waveguide sidewall and etched holes on the top of the waveguide, respectively. Combining the two geometries on a silicon-on-insulator waveguide resulted in Bragg grating filters with high extinction ratios of approximately 60 dB

Fabrication and AC performance of flexible Indium-Gallium-Zinc-Oxide thin-film transistors

The internet of things or foldable phones call for a variety of flexible sensor conditioning and transceiver circuits. However, the realization of high-performance, large-area, and deformable analog circuits is limited by the materials and the processes compatible with mechanically flexible substrates. Among the different semiconductors, InGaZnO is one of the most promising materials to realize high-frequency flexible thin-film transistors (TFTs) and circuits. In this work, the effect of different geometries, including self-aligned, vertical, and double-gate structures on the AC behaviour of flexible IGZO TFTs is presented. All TFTs are based on Al2O3 insulating layers, InGaZnO semiconductor, and polyimide substrates. The presented TFTs exhibit state-of-the-art performance including a field-effect mobility up to 15 cm2 /Vs and a mechanical bendability down to radii of 3.5 mm. Due to different trade-offs required in the fabrication, flexible IGZO TFTs with the shortest channel length of 160 nm do not exhibit the highest measured frequency, whereas exceptional maximum oscillation and transit frequencies of 304 MHz and 135 MHz are demonstrated for 500 nm long self-aligned TFTs. Such optimized transistors can be used to realize entirely flexible analog circuits leading towards imperceptible electronic systems

Silicon photonic filters with high rejection of both TE and TM modes for on-chip four wave mixing applications

Wavelength selective filters represent one of the key elements for photonic integrated circuits (PIC) and many of their applications in linear and non-linear optics. In devices optimised for single polarisation operation, cross-polarisation scattering can significantly limit the achievable filter rejection. An on-chip filter consisting of elements to filter both TE and TM polarisations is demonstrated, based on a cascaded ring resonator geometry, which exhibits a high total optical rejection of over 60 dB. Monolithic integration of a cascaded ring filter with a four-wave mixing micro-ring device is also experimentally demonstrated with a FWM efficiency of -22dB and pump filter extinction of 62dB

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

In recent years new forms of electronic devices such as electronic papers, flexible displays, epidermal sensors, and smart textiles have become reality. Thin-film transistors (TFTs) are the basic blocks of the circuits used in such devices and need to operate above 100 MHz to efficiently treat signals in RF systems and address pixels in high resolution displays. Beyond the choice of the semiconductor, i.e., silicon, graphene, organics, or amorphous oxides, the junctionless nature of TFTs and its geometry imply some limitations which become evident and important in devices with scaled channel length. Furthermore, the mechanical instability of flexible substrates limits the feature size of flexible TFTs. Contact resistance and overlapping capacitance are two parasitic effects which limit the transit frequency of transistors. They are often considered independent, while a deeper analysis of TFTs geometry imposes to handle them together; in fact, they both depend on the overlapping length (LOV) between source/drain and the gate contacts. Here, we conduct a quantitative analysis based on a large number of flexible ultra-scaled IGZO TFTs. Devices with three different values of overlap length and channel length down to 0.5 μm are fabricated to experimentally investigate the scaling behavior of the transit frequency. Contact resistance and overlapping capacitance depend in opposite ways on LOV. These findings establish routes for the optimization of the dimension of source/drain contact pads and suggest design guidelines to achieve megahertz operation in flexible IGZO TFTs and circuits

Feasibility of chest ultrasound up to 42 m underwater

After recent advancements, ultrasound has extended its applications from bedside clinical practice to wilderness medicine. Performing ultrasound scans in extreme environments can allow direct visualization of unique pathophysiological adaptations but can be technically challenging. This paper summarizes how a portable ultrasound apparatus was marinized to let scientific divers and sonographers perform ultrasound scans of the lungs underwater up to - 42 m. A metallic case protected the ultrasound apparatus inside; a frontal transparent panel with a glove allowed visualization and operation of the ultrasound by the diving sonographer. The inner pressure was equalized with environmental pressure through a compressed air tank connected with circuits similar to those used in SCUBA diving. Finally, the ultrasound probe exited the metallic case through a sealed aperture. No technical issues were reported after the first testing step and the real experiments

Flexible In-Ga-Zn-O thin-film transistors with sub-300-nm channel lengths defined by two-photon direct laser writing

In this work, the low-temperature (≤ 150 °C) fabrication and characterization of flexible Indium-Gallium-ZincOxide (IGZO) top-gate thin-film transistors (TFTs) with channel lengths down to 280 nm is presented. Such extremely short channel lengths in flexible IGZO TFTs were realized with a novel manufacturing process combining two-photon direct laser writing (DLW) photolithography with Ti/Au/Ti source/drain e-beam evaporation and lift-off. The resulting flexible IGZO TFTs exhibit a saturation field-effect mobility of 1.1 cm2V -1 s -1 and a threshold voltage of 3 V. Thanks to the short channel lengths (280 nm) and the small gate to source/drain overlap (5.2 µm), the TFTs yield a transit frequency of 80 MHz (at 8.5 V gate-source voltage) extracted from the measured S-parameters. Furthermore, the devices are fully functional when wrapped around a cylindrical rod with 6 mm radius, corresponding to 0.4 % tensile strain in the TFT channel. These results demonstrate a new methodology to realize entirely flexible nano-structures, and prove its suitability for the fabrication of short-channel transistors on polymer substrates for future wearable communication electronics

Fabrication, modeling, and evaluation of a digital output tilt sensor with conductive microspheres

Recent advances in wearable computing ask for bendable and conformable electronic circuits and sensors, allowing an easy integration into everyday life objects. Here, we present a novel flexible tilt sensor on plastic using conductive microspheres as gravity sensitive pendulum. The sensor provides a digital output of the measurement signal without the need for any additional electronics (e.g., amplifiers) close to the sensing structure. The sensor is fabricated on a free-standing polyimide foil with SU-8 photoresist defining the cavity for the pendulum. The pendulum consists of freely movable conductive microspheres which, depending on the sense of gravity, connect different electric contacts patterned on the polyimide foil. We develop a model of the sensor and identify the amount of microspheres as one of the key parameters in the sensor design, which influences the performance of the sensor. The presented tilt sensor with eight contacts achieves an angular resolution of 22.5° with a hysteresis of 10° and less at a tilt of the sensor plane of 50°. Analysis of the microsphere movements reveals a response time of the sensor at ~ 50 ms