Statistical Modeling for Radiation Hardness Assurance: Toward Bigger Data

New approaches to statistical modeling in radiation hardness assurance are discussed. These approaches yield quantitative bounds on flight-part radiation performance even in the absence of conventional data sources. This allows the analyst to bound radiation risk at all stages and for all decisions in the RHA process. It also allows optimization of RHA procedures for the project's risk tolerance

Bayesian Methods for Bounding Single-Event Related Risk in Low-Cost Satellite Missions

We develop single-event risk Prior probability distributions based on historical and heritage data. The Priors can be used to bound single-event effects risk for testing, part selection and design

Screening Parts for Space Missions Using a Pulsed Laser to Test for Failures

This presentation gives an overview pulsed laser testing methods and practical examples for radiation hardness assurance in space system electronics

A Comparison of High-Energy Electron and Cobalt-60 Gamma-Ray Radiation Testing

In this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistor

Confidence Level Based Approach to Total Dose Specification for Spacecraft Electronics

A confidence level based approach to total dose radiation hardness assurance is presented for spacecraft electronics. It is applicable to both ionizing and displacement damage dose. Results are compared to the traditional approach that uses radiation design margin and advantages of the new approach are discussed

Silicon Schottky Diode Safe Operating Area

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices

Single-Event Effect Testing of the Vishay Si7414DN n-Type TrenchFET(Registered Trademark) Power MOSFET

This study was being undertaken to determine the single event effect susceptibility of the commercial Vishay 60-V TrenchFET power MOSFET. Heavy-ion testing was conducted at the Texas AM University Cyclotron Single Event Effects Test Facility (TAMU) and the Lawrence Berkeley National Laboratory BASE Cyclotron Facility (LBNL). In addition, initial 200-MeV proton testing was conducted at Massachusetts General Hospital (MGH) Francis H. Burr Proton Beam Therapy Center. Testing was performed to evaluate this device for single-event effects from lower-LET, lighter ions relevant to higher risk tolerant space missions

Compendium of Current Single Event Effects Results from NASA Goddard Space Flight Center and NASA Electronic Parts and Packaging Program

We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results

Destructive Single-Event Effects in Diodes

In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations

Compendium of Single Event Effect Results from NASA Goddard Space Flight Center

We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics.This paper is a summary of test results