Optical and Electrical Properties of SnO 2

Tin oxide films were deposited on glass substrates by reactive and non reactive r.f. sputtering using different types of targets corresponding to various Sn/F atomic ratio: hot pressed Sn–SnF2 or SnO2–SnF2 mixtures, ceramics obtained by casting either an aqueous SnO2–SnF2 slurry or a suspension of tin oxide in molten tin fluoride. The samples were prepared in oxygen-argon gas mixtures in which the oxygen concentration was varied from 0 mole % up to 30 mole% depending on the target. The optical and electrical properties of the obtained thin films have been studied and compared to those of the films obtained by spray technique

Realization of Solar Cells Based on Silicon/Oxide Junctions

Transparent and conductive films of SrTiO3 , ITO, and Tl2O3 have been deposited by R.F. cathodic sputtering and by anodic oxidation onto Si substrates in order to realize SIS cells. A photoconversion efficiency of 8.8% has been obtained for Si/SiOx/Tl2O3 cells. On the other hand for Si/SiOx/SrTiO3(ITO) the photoconversion efficiency is lower than 1% because of the too large thickness of the SiOx interfacial layer

Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature

Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. An evaluation of the relative position of the dopant associated energy states has been carried out

Influence of Thermal Treatment on The Electronic Properties of ITO Thin Films Obtained by RF Cathodic Pulverization. Study of Solar Cells Based on Silicon/(RF Sputtered) ITO Junctions

ITO (Indium Tin Oxide) thin films obtained by R.F cathodic sputtering have been studied. The influence of thermal treatment on the electronic properties of the films has been particularly investigated. Electrical measurements were performed between 95 and 600 K. Free carriers concentration in the film were measured by Hall effect coefficient. Optical indices were determined by computer drawing of charts allowing to simplify Manifacier method

Applications of Nanoscale Materials in the Fields of Electrochemistry and Photoelectrochemistry

We have illustrated the important role played by the nanoscale materials in three-up-to-date energy topics

PLR (Plastic Lithium Rechargeable) Batteries Using Nanoscale Materials: A Convenient Electrical Energy Power for the Future?

This communication describes the synthesis of: (i) non toxic and low cost nanocrystalline electrode materials which can be advantageously prepared at low temperature; (ii) highly conductive electrolyte membranes formed by the nano-encapsulation within a poly (acrylonitrile)-based polymer matrix of a solution of LiPF6 in organic solvants. The performances of rechargeable PLR (Plastic Lithium Rechargeable) batteries using the above mentioned components are presented

Electronic Properties of Sn- or Ge-Doped In 2

The thermoelectric power and Hall effect of In2O3 single crystals, either undoped or Sn doped, and of In2O3 ceramics, either undoped or Sn or Ge doped, are investigated. All doped samples have negative thermoelectric power values. The metal-type conductivity occurs when the carrier concentration exceeds l019 cm–3 The correspondence between the values of the thermoelectric power and those of the carrier mobility and carrier concentration is given. Most interestingly this study puts into light the enhanced carrier mobility occurring for Ge-doped In2O3 samples compared with ITO samples (Sn-doped In2O3 widely used in optoelectronic devices

Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide

The different electronic behaviors of pure and tin-doped indium oxides with various thermal treatments under high and low oxygen pressure are discussed on the basis of the evolution of the band energy diagram. A critical concentration of “active oxygen vacancies” associated with donor centers is necessary to achieve high electronic mobility in ITO (Indium Tin Oxide)