Selective photosensitization through an and logic response: Optimization of the pH and glutathione response of activatable photosensitizers

A series of pH and GSH responsive photosensitizers were designed and synthesized. pKa values were optimized by adjusting the inductive contribution of substituents to reach a pH range (6.0-7.4) relevant to the tumour microenvironment. pH-Activatable behaviour and redox mediated release of the quencher from the PS by GSH allow the construction of an AND logic operator for selective photodynamic action in aqueous solutions. © The Royal Society of Chemistry 2015

Proof of principle for a molecular 1:2 demultiplexer to function as an autonomously switching theranostic device

Cataloged from PDF version of article.Guided by the digital design concepts, we synthesized a two-module molecular demultiplexer (DEMUX) where the output is switched between emission at near IR, and cytotoxic singlet oxygen, with light at 625 nm as the input (I), and acid as the control (c). In the neutral form, the compound fluoresces brightly under excitation at 625 nm, however, acid addition moves the absorption bands of the two modules in opposite directions, resulting in an effective reversal of excitation energy transfer direction, with a concomitant upsurge of singlet oxygen generation and decrease in emission intensity

Cascading of Molecular Logic Gates for Advanced Functions: A Self-Reporting, Activatable Photosensitizer

Cataloged from PDF version of article.Logical progress: Independent molecular logic gates have been designed and characterized. Then, the individual molecular logic gates were coerced to work together within a micelle. Information relay between the two logic gates was achieved through the intermediacy of singlet oxygen. Working together, these concatenated logic gates result in a self-reporting and activatable photosensitizer. GSH=glutathione

The profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures

Cataloged from PDF version of article.The profile of the interface state densities (N(ss)) and series resistances (R(s)) effect on capacitance-voltage (C-V) and conductance-voltage (G/omega-V) of (Ni/Au)/Al(x)Ga(1-x)N/AlN/GaN heterostructures as a function of the temperature have been investigated at 1 MHz. The admittance method allows us to obtain the parameters characterizing the metal/semiconductor interface phenomena as well as the bulk phenomena. The method revealed that the density of interface states decreases with increasing temperature. Such a behavior of N(ss) can be attributed to reordering and restructure of surface charges. The value of series R(s) decreases with decreasing temperature. This behavior of R(s) is in obvious disagreement with that reported in the literature. It is found that the N(ss) and R(s) of the structure are important parameters that strongly influence the electrical parameters of (Ni/Au)/Al(x)Ga(1-x)N/AlN/GaN(x = 0.22) heterostructures. In addition, in the forward bias region a negative contribution to the capacitance C has been observed, that decreases with the increasing temperature. Copyright (C) 2010 John Wiley & Sons, Ltd