Disorder-free sputtering method on graphene

Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes

Magnetic Oscillation of Optical Phonon in ABA- and ABC-Stacked Trilayer Graphene

We present a comparative measurement of the G-peak oscillations of phonon frequency, Raman intensity and linewidth in the Magneto-Raman scattering of optical E2g phonons in mechanically exfoliated ABA- and ABC-stacked trilayer graphene (TLG). Whereas in ABA-stacked TLG, we observe magnetophonon oscillations consistent with single-bilayer chiral band doublets, the features are flat for ABC-stacked TLG up to magnetic fields of 9 T. This suppression can be attributed to the enhancement of band chirality that compactifies the spectrum of Landau levels and modifies the magnetophonon resonance properties. The drastically different coupling behaviour between the electronic excitations and the E2g phonons in ABA- and ABC-stacked TLG reflects their different electronic band structures and the electronic Landau level transitions and thus can be another way to determine the stacking orders and to probe the stacking-order-dependent electronic structures. In addition, the sensitivity of the magneto-Raman scattering to the particular stacking order in few layers graphene highlights the important role of interlayer coupling in modifying the optical response properties in van der Waals layered materials.Comment: 25 pages, 6 figure

Study of electromagnetic enhancement for surface enhanced Raman spectroscopy of SiC graphene

The electromagnetic enhancement for surface enhanced Raman spectroscopy (SERS) of graphene is studied by inserting a layer of Al 2O 3 between epitaxial graphene and Au nanoparticles. Different excitation lasers are utilized to study the relationship between laser wavelength and SERS. The theoretical calculation shows that the extinction spectrum of Au nanoparticles is modulated by the presence of graphene. The experimental results of the relationship between the excitation laser wavelength and the enhancement factor fit well with the calculated results. An exponential relationship is observed between the enhancement factor and the thickness of the spacer layer

Superionic Fluoride Gate Dielectrics with Low Diffusion Barrier for Advanced Electronics

Exploration of new dielectrics with large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near breakdown limit. To address this looming challenge, we demonstrate that rare-earth-metal fluorides with extremely-low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 $\mu$F cm$^{-2}$ (with an equivalent oxide thickness of ~0.15 nm and a large effective dielectric constant near 30) and great compatibility with scalable device manufacturing processes. Such static dielectric capability of superionic fluorides is exemplified by MoS$_2$ transistors exhibiting high on/off current ratios over 10$^8$, ultralow subthreshold swing of 65 mV dec$^{-1}$, and ultralow leakage current density of ~10$^{-6}$ A cm$^{-2}$. Therefore, the fluoride-gated logic inverters can achieve significantly higher static voltage gain values, surpassing ~167, compared to conventional dielectric. Furthermore, the application of fluoride gating enables the demonstration of NAND, NOR, AND, and OR logic circuits with low static energy consumption. Notably, the superconductor-to-insulator transition at the clean-limit Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ can also be realized through fluoride gating. Our findings highlight fluoride dielectrics as a pioneering platform for advanced electronics applications and for tailoring emergent electronic states in condensed matters.Comment: 33 pages, 5 figure

Controlling Exchange Interactions and Emergent Magnetic Phenomena in Layered 3d‐Orbital Ferromagnets

Abstract Layered 3d‐orbital ferromagnet is an ideal research platform to experimentally achieve intrinsic 2D ferromagnetism and theoretically study the quantum nature of magnetic exchange interactions therein. A variety of magnetic phases can emerge from the strongly correlated feature of 3d‐orbital electrons, in which their exchange interactions can be effectively modulated by various kinds of external stimuli. Therefore, controlling the emergent magnetic phenomena of layered 3d‐orbital ferromagnets is significant in both fundamental science and practical applications. Considering the roles of magnetic exchange interactions, this review summarizes recent progress in controlling the emergent magnetic properties of layered 3d‐orbital ferromagnets by systematically introducing modulation methods, underlying mechanisms, and device applications. The existing challenges and future prospects for this research field are also outlined, shedding light on finding optimized magnetic materials, exploring powerful modulation techniques, and designing multifunctional new concept devices

Effect of Eleutheroside E on an MPTP-Induced Parkinson’s Disease Cell Model and Its Mechanism

This research investigated the effects of eleutheroside E (EE) on the 1-methyl-4-phenyl-1,2,3,6-tetrahydropyridine (MPTP)-induced Parkinson’s disease cell model and its mechanism. Methods: To create a cell model of Parkinson’s disease, MPTP (2500 μmol/L) was administered to rat adrenal pheochromocytoma cells (PC-12) to produce an MPTP group. Selegiline (50 μmol/L) and MPTP had been administered to the positive group beforehand. The eleutheroside E group was divided into low-, medium-, and high-concentration groups, in which the cells were pretreated with eleutheroside E at concentrations of 100 μmol/L, 300 μmol/L, and 500 μmol/L. Next, MPTP was added to the cells separately. The CCK-8 method was used to measure the cell survival rate. Apart from the CCK-8 method, mitochondrial membrane potential detection, cell reactive oxygen species (ROS) detection, and other methods were also adopted to verify the effect of low, medium, and high concentrations of eleutheroside E on the MPTP-induced cell model. Western blot analysis was used to detect changes in the expression of intracellular proteins CytC, Nrf2, and NQO1 to clarify the mechanism. The results are as follows. Compared with the MPTP group, the survival rates of cells at low, medium, and high concentrations of eleutheroside E all increased. The mitochondrial membrane potential at medium and high concentrations of eleutheroside E increased. The ROS levels at medium and high concentrations of eleutheroside E decreased. Moreover, the apoptosis rate decreased and the expression levels of the intracellular proteins CytC, Nrf2, and NQO1 were upregulated. Conclusion: Eleutheroside E can improve the MPTP-induced apoptosis of PC-12 cells by increasing the mitochondrial membrane potential and reducing the level of intracellular reactive oxygen species (ROS). Moreover, the apoptosis of cells is regulated by the expression of CytC, Nrf2, and NQO1 proteins

Modification on Single-Layer Graphene Induced by Low-Energy Electron-Beam Irradiation

In this work, we present studies of the effects of electron-beam irradiation on the modification of single-layer graphene. Micro-Raman spectra show that the D, D′, and D + G Raman bands, which are invisible for pristine graphene, appear after the graphenes are irradiated by low-energy electron-beam irradiation (10 keV), and the intensities of these peaks increase with increasing irradiation time, indicating disorder in graphene. The characteristics of G and 2D bands of graphene are also studied before and after irradiation. In the meantime, the height of graphene is studied by atomic force microscopy and found to increase for increasing irradiation time due to the contaminant deposition on graphene. The effects introduced by irradiation can be recovered partly by vacuum annealing. These results provide important information about the modification of graphene under electron-beam irradiation