Resistively Heated SiC Nozzle for Generating Molecular Beams

An improved nozzle has been developed to replace nozzles used previously in an apparatus that generates a substantially unidirectional beam of molecules passing through a vacuum at speeds of several kilometers per second. The basic principle of operation of the apparatus is the same for both the previous and the present nozzle designs. The main working part of the nozzle is essentially a cylinder that is closed except that there is an inlet for a pressurized gas and, at one end, the cylinder is closed by a disk that contains a narrow central hole that serves as an outlet. The cylinder is heated to increase the thermal speeds of the gas molecules into the desired high-speed range. Heated, pressurized gas escapes through the outlet into a portion of the vacuum chamber that is separated, by a wall, from the rest of the vacuum chamber. In this portion of the vacuum chamber, the gas undergoes a free jet expansion. Most of the expanded gas is evacuated and thus does not become part of the molecular beam. A small fraction of the expanded beam passes through a narrow central orifice in the wall and thereby becomes a needle- thin molecular beam in the portion of the vacuum on the downstream side of the wall

Developing a Novel Platform for Characterizing Thermoelectric Materials for Uncooled Detectors for Land Imaging Applications

Thermal land imaging (imaging at ~8-14 micron optical wavelength) is an essential tool for understanding and managing terrestrial freshwater resources. Current thermal imaging instruments employ low temperature detectors, which require cryocoolers. Consequently, cost-saving reductions in size, weight, and power can be achieved by employing uncooled detectors. One uncooled detector concept, which NASA is pursuing, is a thermopile detector with sub-micron thick doped-Si thermoelectric materials. In order to characterize the thermoelectric properties of the doped silicon, we designed and optimized a novel apparatus. This simple apparatus measures the Seebeck coefficient with thermally isolated stages and LABVIEW automation. We optimized thermal stability using PID tuning and optimized the thermal contact between the thin film samples and stages using electrically conductive springs. Utilizing our apparatus, we measured the Seebeck coefficient of 0.45 micron thick phosphorus-doped single crystal Si samples bonded to alumina substrates. Using these Seebeck coefficient measurements and four-wire electrical resistivity measurements, we determined the relationship between the thermoelectric figure of merit and dopant concentration. These characterization results for doped-Si will guide our thermopile detector design to provide an optimal and competitive detector alternative for future thermal imaging instruments