Entanglement Dynamics after a Quench in Ising Field Theory: A Branch Point Twist Field Approach

We extend the branch point twist field approach for the calculation of entanglement entropies to time-dependent problems in 1+1-dimensional massive quantum field theories. We focus on the simplest example: a mass quench in the Ising field theory from initial mass m0 to final mass m. The main analytical results are obtained from a perturbative expansion of the twist field one-point function in the post-quench quasi-particle basis. The expected linear growth of the Rényi entropies at large times mt ≫ 1 emerges from a perturbative calculation at second order. We also show that the Rényi and von Neumann entropies, in infinite volume, contain subleading oscillatory contributions of frequency 2m and amplitude proportional to (mt)−3/2. The oscillatory terms are correctly predicted by an alternative perturbation series, in the pre-quench quasi-particle basis, which we also discuss. A comparison to lattice numerical calculations carried out on an Ising chain in the scaling limit shows very good agreement with the quantum field theory predictions. We also find evidence of clustering of twist field correlators which implies that the entanglement entropies are proportional to the number of subsystem boundary points

Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band

The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature TC. It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band. In this paper we combine results of channeling experiments, which measure the concentrations both of Mn ions and of holes relevant to the ferromagnetic order, with magnetization, transport, and magneto-optical data to address this issue. Taken together, these measurements provide strong evidence that it is the location of the Fermi level within the impurity band that determines TC through determining the degree of hole localization. This finding differs drastically from the often accepted view that TC is controlled by valence band holes, thus opening new avenues for achieving higher values of TC.Comment: 5 figures, supplementary material include