Manipulation of the spin helix in FeGe thin films and FeGe/Fe multilayers

Magnetic materials without structural inversion symmetry can display the Dzyaloshinskii-Moriya interaction, which manifests itself as chiral magnetic ground states. These chiral states can interact in complex ways with applied fields and boundary conditions provided by finite sample sizes that are of the order of the lengthscale of the chiral states. Here we study epitaxial thin films of FeGe with a thickness close to the helix pitch of the helimagnetic ground state, which is about 70 nm, by conventional magnetometry and polarized neutron reflectometry. We show that the helix in an FeGe film reverses under the application of a field by deforming into a helicoidal form, with twists in the helicoid being forced out of the film surfaces on the way to saturation. An additional boundary condition was imposed by exchange coupling a ferromagnetic Fe layer to one of the interfaces of an FeGe layer. This forces the FeGe spins at the interface to point in the same direction as the Fe, preventing node expulsion and giving a handle by which the reversal of the helical magnet may be controlled

Probing the Spiral Magnetic Phase in 6 nm Textured Erbium using Polarised Neutron Reflectometry

We characterise the magnetic state of highly-textured, sputter deposited erbium for a film of thickness 6 nm. Using polarised neutron reflectometry it is found the film has a high degree of magnetic disorder, and we present some evidence that the films’ local magnetic state is consistent with bulk-like spiral magnetism. This, combined with complementary characterisation techniques, show that thin film erbium is a strong candidate material for incorporation into device structures

Temperature controlled motion of an antiferromagnet- ferromagnet interface within a dopant-graded FeRh epilayer

Chemically ordered B2 FeRh exhibits a remarkable antiferromagnetic-ferromagnetic phase transition that is first order. It thus shows phase coexistence, usually by proceeding though nucleation at random defect sites followed by propagation of phase boundary domain walls. The transition occurs at a temperature that can be varied by doping other metals onto the Rh site. We have taken advantage of this to yield control over the transition process by preparing an epilayer with oppositely directed doping gradients of Pd and Ir throughout its height, yielding a gradual transition that occurs between 350 K and 500 K. As the sample is heated, a horizontal antiferromagnetic-ferromagnetic phase boundary domain wall moves gradually up through the layer, its position controlled by the temperature. This mobile magnetic domain wall affects the magnetisation and resistivity of the layer in a way that can be controlled, and hence exploited, for novel device applications

Interfacial Origin of the Magnetisation Suppression of Thin Film Yttrium Iron Garnet

Yttrium iron garnet has a very high Verdet constant, is transparent in the infrared and is an insulating ferrimagnet leading to its use in optical and magneto-optical applications. Its high Q-factor has been exploited to make resonators and filters in microwave devices, but it also has the lowest magnetic damping of any known material. In this article we describe the structural and magnetic properties of single crystal thin-film YIG where the temperature dependence of the magnetisation reveals a decrease in the low temperature region. In order to understand this complex material we bring a large number of structural and magnetic techniques to bear on the same samples. Through a comprehensive analysis we show that at the substrate -YIG interface, an interdiffusion zone of only 4 - 6nm exists. Due to the interdiffusion of Y from the YIG and Gd from the substrate, an addition magnetic layer is formed at the interface whose properties are crucially important in samples with a thickness of YIG less than 200nm

Interface-Coupled BiFeO<inf>3</inf>/BiMnO<inf>3</inf> Superlattices with Magnetic Transition Temperature up to 410 K

This research was funded by the Engineering and Physical Sciences Research Council, (EP/P50385X/1), the European Research Council (ERC-2009-AdG 247276 NOVOX). The work at Texas A&M was funded by the U.S. National Science Foundation (DMR-1401266). The work at Los Alamos was supported by the U.S. Department of Energy through the LANL/LDRD program and was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility. Use of the National Synchrotron Light Source, Brookhaven National Laboratory, was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-98CH10886.This is the final version of the article. It first appeared from Wiley via http://dx.doi.org/10.1002/admi.20150059

Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe₁−yCoyGe films

Epitaxial films of the B20-structure compound Fe1−yCoyGe were grown by molecular beam epitaxy on Si (111) substrates. The magnetization varied smoothly from the bulklike values of one Bohr magneton per Fe atom for FeGe to zero for nonmagnetic CoGe. The chiral lattice structure leads to a Dzyaloshinskii-Moriya interaction (DMI), and the films' helical magnetic ground state was confirmed using polarized neutron reflectometry measurements. The pitch of the spin helix, measured by this method, varies with Co content y and diverges at y∼0.45. This indicates a zero crossing of the DMI, which we reproduced in calculations using first-principles methods. We also measured the longitudinal and Hall resistivity of our films as a function of magnetic field, temperature, and Co content y. The Hall resistivity is expected to contain contributions from the ordinary, anomalous, and topological Hall effects. Both the anomalous and topological Hall resistivities show peaks around y∼0.5. Our first-principles calculations show a peak in the topological Hall constant at this value of y, related to the strong spin polarization predicted for intermediate values of y. Our calculations predict half-metallicity for y=0.6, consistent with the experimentally observed linear magnetoresistance at this composition, and potentially related to the other unusual transport properties for intermediate value of y. While it is possible to reconcile theory with experiment for the various Hall effects for FeGe, the large topological Hall resistivities for y∼0.5 are much larger than expected when the very small emergent fields associated with the divergence in the DMI are taken into account