Spectroscopic Ellipsometry Analysis of Rapid Thermal Annealing Effecton MBE Grown GaAs1−x −Nx, Journal of Telecommunications and Information Technology, 2009, nr 1

We report on the effect of rapid thermal annealing (RTA) on GaAs1−x−Nx layers, grown by molecular beam epitaxy (MBE), using room temperature spectroscopic ellipsometry (SE). A comparative study was carried out on a set of GaAs1−x−Nx as-grown and the RTA samples with small nitrogen content (x = 0.1%, 0.5% and 1.5%). Thanks to the standard critical point model parameterization of the GaAs1−x−Nx extracted dielectric functions, we have determined the RTA effect, and its nitrogen dependence. We have found that RTA affects more samples with high nitrogen content. In addition, RTA is found to decrease the E1 energy nitrogen blueshift and increase the broadening parameters of E1, E1+Δ1, E′0 and E2 critical points

Titanium Dioxide Thin Films for Environmental Applications

The environmental pollution and the rapid depletion of fossil fuel caused by the rapid increase in industrial production became serious problems for humans. These issues have inspired many researchers to found eco-friendly materials, which can degrade pollutants and produce green energy. Titanium dioxide (TiO2) thin films are one of the important and promising semiconductor materials for environmental and energy applications because of their unique optical and electronic properties. In this chapter, an overview of the background of TiO2 structure and the different methods of synthesis TiO2 thin films were carried out. The photocatalytic water treatment and the water split for H2 production by TiO2 thin films were investigated. The strong influence on photocatalytic and water split efficiency of TiO2 thin films by crystal structure, surface area, crystalline structure, average particle size and porosity were summarized

Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures

© 2020 by the authors.A key requirement for the development of highly efficient silicon nanowires (SiNWs) for use in various kinds of cutting-edge applications is the outstanding passivation of their surfaces. In this vein, we report on a superior passivation of a SiNWs surface by bismuth nano-coating (BiNC) for the first time. A metal-assisted chemical etching technique was used to produce the SiNW arrays, while the BiNCs were anchored on the NWs through thermal evaporation. The systematic studies by Scanning Electron Microscopy (SEM), energy dispersive X-ray spectra (EDX), and Fourier Transform Infra-Red (FTIR) spectroscopies highlight the successful decoration of SiNWs by BiNC. The photoluminescence (PL) emission properties of the samples were studied in the visible and near-infrared (NIR) spectral range. Interestingly, nine-fold visible PL enhancement and NIR broadband emission were recorded for the Bi-modified SiNWs. To our best knowledge, this is the first observation of NIR luminescence from Bi-coated SiNWs (Bi@SiNWs), and thus sheds light on a new family of Bi-doped materials operating in the NIR and covering the important telecommunication wavelengths. Excellent anti-reflectance abilities of ~10% and 8% are observed for pure SiNWs and Bi@SiNWs, respectively, as compared to the Si wafer (50–90%). A large decrease in the recombination activities is also obtained from Bi@SiNWs heterostructures. The reasons behind the superior improvement of the Bi@SiNWs performance are discussed in detail. The findings demonstrate the effectiveness of Bi as a novel surface passivation coating, where Bi@SiNWs heterostructures are very promising and multifunctional for photovoltaics, optoelectronics, and telecommunications.M. Naffeti acknowledge the Tunisian Ministry of Higher Education and Scientific Research as well as University of Tunis. M. Naffeti and P.A. Postigo acknowledge the service from the X-SEM Laboratory at IMN and thank Benito Alén for providing the necessary facilities to carry out the PL measurementsPeer reviewe

Correlation between photoelectrochemical and photoluminescence measurements of Ag-doped ZnO/ITO photoanode

Silver-doped zinc oxide (SZO) thin films have been deposited onto indium-doped tin oxide substrates (ITO) using sol–gel spin-coating technique with different Ag doping content (1, 2 and 5% Ag). The effect of silver incorporation on structural, morphological, optical and photoelectrochemical (PEC) properties of the SZO films was investigated. Ag incorporation resulted in an enhanced grain size and thickness of elaborated SZO films. Scanning electron micrographs exhibited a uniform distribution of spherical grains with particle size increment after doping. Band gap energies were found to increase after Ag doping. Photoluminescence (PL) measurements revealed that the energy band gaps of the films were in the UV region. As compared to pure ZnO thin film, the samples are more photoactive, and the film containing 2% Ag yielded the highest photocurrent. A correlation study between PEC and PL measurements of Ag-doped ZnO/ITO photoanode leads to a reverse variation. Charge transfer processes at the ZnO–electrolyte interface were identified by electrochemical impedance spectroscopy

Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

© 2020 by the authors.In this work, vertically aligned silicon nanowires (SiNWs) with relatively high crystallinity have been fabricated through a facile, reliable, and cost-effective metal assisted chemical etching method. After introducing an itemized elucidation of the fabrication process, the effect of varying etching time on morphological, structural, optical, and electrical properties of SiNWs was analysed. The NWs length increased with increasing etching time, whereas the wires filling ratio decreased. The broadband photoluminescence (PL) emission was originated from self-generated silicon nanocrystallites (SiNCs) and their size were derived through an analytical model. FTIR spectroscopy confirms that the PL deterioration for extended time is owing to the restriction of excitation volume and therefore reduction of effective light-emitting crystallites. These SiNWs are very effective in reducing the reflectance to 9–15% in comparison with Si wafer. I–V characteristics revealed that the rectifying behaviour and the diode parameters calculated from conventional thermionic emission and Cheung’s model depend on the geometry of SiNWs. We deduce that judicious control of etching time or otherwise SiNWs’ length is the key to ensure better optical and electrical properties of SiNWs. Our findings demonstrate that shorter SiNWs are much more optically and electrically active which is auspicious for the use in optoelectronic devices and solar cells applications.Peer reviewe

Optical simulation of colloidal photonic crystals with controllable size spheres of silica

In this work, optical properties of colloidal silica crystals are investigated theoretically. Numerical calculations are discussed and compared to experimental measurements. The existence of photonic band gap (or stop band) is inferred by analyzing the transmission spectra and dips of low transmission are typically correlated with photonic band gaps. The position of the main dip in simulated spectra matches the pseudo photonic band gap expected by the calculated photonic band gap diagram. Positions of stop band show a strong dependence on the diameter of silica spheres. We note that positions of the main dips deduced from simulated and measured spectra are very near. Good agreement between measured and theoretical results is then reported

Effect of porous layer engineered with acid vapor etching on optical properties of solid silicon nanowire arrays

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Effect of gamma radiation on the photocatalytic properties of Cu doped titania nanoparticles

International audienceThe aim of this paper is to study the effect of gamma-rays on structural, physicochemical, optical and photocatalytic performance of TiO 2 nanoparticles doped with different concentrations of copper ranging from 0 to 6 at.%. The powders have been prepared by sol-gel technique and annealed at 400 °C. They were irradiated by gamma-rays with doses varying from 14 to 60 KGy. These investigations confirm the formation of anatase TiO 2 nanoparticles and Cu 2+ ion substitution for Ti 4+ sites within the TiO 2 structure. This study also shows that, once the TiO 2 structure is saturated with copper, a metallic copper segregation is formed at the crystallite surfaces. After gamma irradiation, samples present a crystalline core and a disordered shell structure as a result of the formation of oxygen vacancies. Such oxygen vacancies at the TiO 2 nanocrystal surface lead to a remarkable enhancement of the photocatalytic activity of Cu-doped TiO 2 catalysts

High Efficient and Cost Effective Titanium Doped Tin Dioxide Based Photocatalysts Synthesized via Co-precipitation Approach

High efficient and large surface area of titanium doped tin dioxide (SnO2) based photocatalysts with various titanium doping contents varying from 0 to 4 mol% have been successfully prepared via a facile, low cost and eco-friendly co-precipitation method. Structural, morphological, textural, microstructural and optical properties of the prepared Ti-SnO2 nanoparticles (NPs) have been investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), the Brunauer–Emmett-Teller (BET) method, Raman spectroscopy, Fourier transform infrared (FTIR), UV-Vis spectroscopy and photoluminescence (PL) spectroscopy. It was found that both undoped and Ti doped SnO2 NPs were crystallized in tetragonal structure and the crystallite sizes have been reduced from 19.9 nm for undoped SnO2 NPs to 13.1 nm for SnO2: Ti 4%. As compared to pure SnO2, a decrease in size and a uniform distribution of spherical aggregates for 4% Ti doped SnO2 sample have been noticed. Nitrogen (N2) adsorption-desorption isotherms of all synthesized NPs indicate that each nanopowder showed a IV type- isotherm with a hysteresis loop resulted in a typical porous materials containing macropores and mesopores. The raman spectra was marked with the appearance of three well resolved peaks including one intense peak centered at 633 cm−1 and two other peaks at about 475 cm−1 and 772 cm−1 which might be ascribed to the characteristic modes of of the SnO2 rutile-type. FTIR spectra of Ti doped SnO2 NPs show a broad band situated in the region from 630 cm−1 to 625 cm−1 for all Ti–SnO2 samples which could be assigned to the stretching vibrations of Sn–O–Sn. Optical studies revealed that the absorption edge of SnO2: Ti NPs showed a redshift with rising titanium concentration. This redshift resulted in a decrease in the optical band gap from 3.31 eV for pure SnO2 to 2.87 eV for 4% Ti doped SnO2 nanoparticles respectively. Rhodamine B dye (RhB) has been adopted to study the photocatalytic degradation of all synthesized Ti–SnO2 NPs. Pure SnO2 NPs has an intrinsic large band gap and it was sensitive to UV light. Thus, pure SnO2 NPs display higher UV photocatalytic performance for decomposing the RhB. Titanium incorporation into SnO2 has widely improved its photocatalytic performance towards RhB photodegradation under UV and Visible light irradiations. Precisely, the 4% Ti–SnO2 based photocatalyst display the highest photacatalytic activity and can degrade both of 95% and 52% of RhB dye within 120 min respectively under UV and visible light irradiations. The enhanced photocatalytic activity of the 4% doped SnO2 photocatalyst was further proved with the minimum PL intensity. The homogeneous incorporation of low Ti contents into the SnO2 matrix allow to a significant reduce in the band gap leading to an efficient separation of photogenerated electron-hole pairs and consequently improves the absorption capability in the visible light